Fabrication of thermo-optic switch in silicon-on-insulator
Data(s) |
2003
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Resumo |
Silicon-on-insulator technology has been used to fabricate 2 x 2 thermo-optic switches. The switch shows crosstalk of -23.4 dB and extinction ratio of 18.1 dB in the bar-state. The switching speed is less than 30 mus and the power consumption is about 420 mW The measured excess loss is 1.8 dB. These merits make the switch more attractive for applications in wavelength division multiplexing. |
Identificador | |
Idioma(s) |
英语 |
Fonte |
Wang ZT; Xia JS; Fan ZC; Chen SW; Yu JZ .Fabrication of thermo-optic switch in silicon-on-insulator ,CHINESE PHYSICS LETTERS,2003,20 (12):2185-2187 |
Palavras-Chave | #半导体物理 #silicon-on-insulator |
Tipo |
期刊论文 |