郭永怀先生诞辰九十周年纪念文集

目录

燃烧物理学基础

植生克雷伯氏菌（Klebsiella planticola 19-1）nifA-like基因的克隆

植生克雷伯氏菌(Klebsiella planticola 19-1)是从新疆鄯善地区玉米根际分离得到的一株联合固氮菌。在40℃高温下有较强的乙炔还原活性。 本工作利用Southern Blot分子杂交技术, 以Klebsiella pneumoniae的nifA为探针，证明了在K．planticola 19-1中存在nifA-like基因，由nifH-lacZ实验推论其nifA-like基因产物对高温相对稳定。经过大质粒电泳和Southern Blot分子杂交，发现nifA-like基因定位于染色体外的大质粒上。本工作进一步克隆了含有K．plonticola 19-1的nifA-like基因的DNA片段，做了它的限制性酶切图谱，并将nifA-like基因初步定位。

The Homology and Relationship of Human (Homo sapiens) Chromosomes 1, 19 and Dusky Langur (Trachypithacus obscurus) Chromosomes 6, 8 Demonstrated with Chromosome Painting

http://www.jstage.jst.go.jp/

Polymorphisms in the C-type lectin genes cluster in chromosome 19 and predisposition to severe acute respiratory syndrome coronavirus (SARS-CoV) infection

Background: Polymorphisms of CLEC4M have been associated with predisposition for infection by the severe acute respiratory syndrome coronavirus (SARS-CoV). DC-SIGNR, a C-type lectin encoded by CLEC4M, is a receptor for the virus. A variable number tandem

Studies on temporal and spatial variations of phytoplankton in Lake Chaohu

Temporal and spatial variations of the phytoplankton assemblage in Lake Chaohu, a large shallow eutrophic lake in China, were studied from September 2002 to August 2003. A total of 191 phytoplankton species was identified, among which Chlorophytes (101) ranked the first, followed by Cyanophytes (46) and Bacillariophytes (28). On average over the entire lake, the maximum total algal biomass appeared in June (19.70 mg/L) with a minimum (5.05 mg/ L) in November. In terms of annual mean biomass, cyanobacteria contributed 45.43% to total algal biomass, followed by Chlorophytes (27.14%), and Bacillariophytes (20.6%). When nitrate (NO3-N) and ammonium (NH4-N) concentrations dropped in spring, fixing-nitrogen cyanobacterium (Anabaena) developed quickly and ranked the first in terms of biomass in summer. It is likely that dominance of zooplanktivorous fish and small crustacean zooplankton favored the development of the inedible filamentous or colony forming cyanobacteria. The persistent dominance of cyanobacteria throughout all seasons may indicate a new tendency of the response of phytoplankton to eutrophication in Lake Chaohu.

A narrow photoluminescence linewidth of 19.2 meV at 1.35 mu m from In0.5Ga0.5As/GaAs quantum island structure grown by molecular beam epitaxy

A self-organized In0.5Ga0.5As/GaAs quantum island structure emitting at 1.35 mum at room temperature has been successfully fabricated by molecular beam epitaxy via cycled (InAs)(1)/GaAs)(1)monolayer deposition method. The photoluminescence measurement shows that a very narrow linewidth of 19.2 meV at 300 K has been reached for the first time, indicating effective suppression of inhomogeneous broadening of optical emission from the In0.5Ga0.5As island structure due to indium segregation reduction by introducing an AlAs layer and the strain reduction by inserting an In0.2Ga0.8As layer overgrown on the top of islands. The mound-like morphology of the islands elongated along the [1 (1) over bar0] azimuth are observed by the atomic force microscopy measurement, which reveals the fact that strain in the islands is partially relaxed along the [1 (1) over bar0] direction. Our results present important information for the fabrication of 1.3 mum wavelength quantum dot devices.

The improvement characteristics of homoepitaxial GaAs grown by atomic hydrogen-assisted molecular beam epitaxy

The electrical activity of defects in GaAs grown on GaAs substrates doped with Si and Be by both conventional molecular beam epitaxy (MBE) and atomic hydrogen-assisted MBE (H-MBE) were characterized by deep level transient spectroscopy. The trap densities are significantly reduced in the homoepitaxial GaAs grown by H-MBE compared to that grown by MBE. The reduction of trap densities is attributed to in situ passivation of these defects by atomic H during the growth. The improvement characteristics of GaAs materials will be significance for fabrication of semiconductor devices.

原子氢辅助分子束外延生长对GaAs材料性能的改善

利用深能级瞬态谱(DLTS)研究了常规分子束外延和原子氢辅助分子生长的掺杂Si和Be的GaAs同质结构样品中缺陷的电学特性。发现原子氢辅助分子束外延生长的样品中缺陷的浓度与常规分子束外延生长的样品相比有明显的降低，这可解释为生长过程中原子氢对缺陷的原位中和与钝化作用。