37 resultados para 1510

em Chinese Academy of Sciences Institutional Repositories Grid Portal


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Both earthquake prediction and failure prediction of disordered brittle media are difficult and complicated problems and they might have something in common. In order to search for clues for earthquake prediction, the common features of failure in a simple nonlinear dynamical model resembling disordered brittle media are examined. It is found that the failure manifests evolution-induced catastrophe (EIC), i.e., the abrupt transition from globally stable (GS) accumulation of damage to catastrophic failure. A distinct feature is the significant uncertainty of catastrophe, called sample-specificity. Consequently, it is impossible to make a deterministic prediction macroscopically. This is similar to the question of predictability of earthquakes. However, our model shows that strong stress fluctuations may be an immediate precursor of catastrophic failure statistically. This might provide clues for earthquake forecasting.

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使用简单的爆推模型估算爆推快点火过程及其结果。首先由ns级主驱动激光直接驱动,形成中心低密度高温热斑,周围为高密度低温主燃料区,两区压力平衡(等压模型);然后用ps级超短超强激光打入,产生超热电子,其能量在低温主燃料区沉积,主燃料区发生爆炸,一部分向外飞散,一部分向内压缩中心热斑。在这个爆推模型下,热斑体积压缩比为64,中子产率将有极大的提高,相应的中子产额和能量增益得到提高。离子温度因为主燃料区质量过大,提高不大。提高超热电子能量,或者减小低温主燃料区质量,离子温度将会显著提高。不同的初始离子温度对结果

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基于矢量折射定理,研究了透射光束通过双棱镜实现微弧度量级偏转的设计原理,解决了星间激光通信精跟瞄检测的难题。推导了正交双棱镜实现光束偏转的精确公式,提出以水平张角和垂直张角表达光束视场,并说明了单棱镜实现光束偏转的一般情况。根据设计指标和计算结果确定了棱镜的主要参量,进而对光束的偏转结果进行了数值模拟。最后的实验结果与模拟结果基本一致。结果表明:取棱镜棱角α为4°时,棱镜每旋转1’,透射光束变化约1μrad;分别控制双棱镜在其最小偏向角一侧小角度偏转,可以实现光束在水平方向和垂直方向500μ范围内的精确扫

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应用Judd-Oflet理论计算了新型掺铒高硅氧玻璃中铒离子的强度参量Ωt(t=2,4,6),Ω2=8.15×10^-20,Ω4=1.43×10^-20,Ω6=1.22×10^-20,相比于其他氧化物玻璃,表现出较大的Ω2,6值,反映了铒离子周围的近邻结构不对称性和Er-O键的离子键成分较高.利用McCumber理论计算得到了能级4I13/2→4I15/2跃迁的受激发射截面为σc=O.51pm^2.这种高硅氧玻璃掺铒离子浓度尽管高于石英光纤的掺杂浓度10倍左右,其荧光寿命和量子效率仍达到6.0ms和66.

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采用了基于两相流理论的三维相间界面计算模型模拟湖泊风生流,并采用交错网格的有限体积法求解。该模型应用于昆明市滇池的风生流模拟,实际计算表明该模型算法程序简单,计算结果合理,能较真实的反映湖泊风生流的流态特征。

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单细胞绿藻是淡水水体中浮游植物的重要组成部分 ,也是淡水生态系统中主要的初级生产者 ,其在适应外界环境CO2 浓度变化的过程中 ,细胞内形成了一种主动转移无机碳的机制———CO2 浓缩机制(CO2 concentratingmechanism ,CCM ) .该机制能使细胞在核酮糖 2 磷酸羧化氧化酶 (rubisco)固碳位点提高CO2 浓度 ,以增加光合作用和减少光呼吸 .本文综述了这种机制中的无机碳转移模型和不同环境因子 (光、温度、CO2 浓度和营养水平 )对它的调控作用 ,以期促进深入开展浮游植

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The third-order optical nonlinear refractive properties of InAs/GaAs quantum dots grown by molecular beam epitaxy have been measured using the reflection Z-scan technique at above-bandgap energy. The nonlinear refractive index and nonlinear absorption index of the InAs/GaAs quantum dots were determined for wavelengths from 740 to 777 nm. The measured results are compared with the nonlinear refractive response of several typical III-V group semiconductor materials. The corresponding mechanisms responsible for the large nonlinear response are discussed.

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Directional emission InP/AlGaInAs square-resonator microlasers with a side length of 20 mu m are fabricated by standard photolithography and inductively coupled-plasma etching technique. Multimode resonances with about seven distinct mode peaks in a free-spectral range are observed from 1460 to 1560 nm with the free-spectral range of 12.1 nm near the wavelength of 1510 nm, and the mode refractive index versus the photon energy E (eV) as 3.07152+0.18304E are obtained by fitting the laser spectra with an analytical mode wavelength formula derived by light ray method. In addition, mode field pattern is simulated for cold cavity by two dimensional finite-difference time-domain technique.

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An ultracompact, low-loss, and broad-band corner mirror, based on photonic crystals, is investigated in this paper. Based on the theoretical analysis of the loss mechanism, the boundary layers of the photonic crystal region are revised to improve the extra losses, and the transmission characteristics are evaluated by using the 3-D finite-difference time-domain method. The device with optimized structure was fabricated on silicon-on-insulator substrate by using electron-beam lithography and inductively coupled plasma etching. The measured extra losses are about 1.1 +/- 0.4 dB per corner mirror for transverse-electronic polarization for the scanning wavelength range of 1510-1630 nm. Dimensions of the achieved PC corner mirror are less than ;7 x 7 mu m(2), which are only about one tenth of conventional wave-guide corner mirrors.

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Broad-band semiconductor optical amplifiers (SOAs) with different thicknesses and thin bulk tensile-strained active layers were fabricated and studied. Amplified spontaneous emission (ASE) spectra and gain spectra of SOAs were measured and analyzed at different CW biases. A maximal 3 dB ASE bandwidth of 136 nm ranging from 1480 to 1616 nm, and a 3 dB optical amplifier gain bandwidth of about 90 nm ranging from 1510 to 1600 nm, were obtained for the very thin bulk active SOA. Other SOAs characteristics such as saturation output power and polarization sensitivity were measured and compared. (c) 2006 Elsevier B.V. All rights reserved.

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A technique based on the integrations of the product of amplified spontaneous emission spectrum and a phase function over one mode interval is proposed for measuring gain spectrum for Fabry-Perot semiconductor lasers, and a gain correction factor related to the response function of the optical spectrum analyzer (OSA) is obtained for improving the accuracy of measured gain spectrum. The gain spectra with a difference less than 1.3 cm(-1) from 1500 to 1600 nm are obtained for a 250-mum-long semiconductor laser at the OSA resolution of 0.06, 0.1, 0.2, and 0.5 nm. The corresponding gain correction factor is about 9 cm(-1) at the resolution of 0.5 nm. The gain spectrum measured at the resolution of 0.5 nm has the same accuracy as that obtained by the Hakki-Paoli method at the resolution of 0.06 nm for the laser with the mode interval of 1.3 nm.