铒玻璃在1．54μm实现1 Hz下3 J和5 Hz下0．6 J的激光输出

近年来,随着激光告警、激光指示、风速测量、激光雷达尤其是激光美容等方面的需求逐渐增加,要求掺铒激光玻璃能够实现比以往更高重复频率以及更大能量的激光输出,其中对脉冲能量的要求达1～10 J。

In_(0.4)Ga_(0.6)As/GaAs自组织量子点的光伏谱温度特性

采用无需在样品上制备电极的电容耦合的光伏谱方法,实验测量了In_(0.4)Ga_(0.6)As/GaAs自组织量子点在不同的温度下的光伏谱,对测量谱峰进行了指认,研究了量子点谱峰能量位置随温度的依赖关系。实验结果表明,量子点具有与体材料及二维体系不同的温度特性,对实验所测样品,其激子峰能量随温度增加而红移的速率约为GaAs体材料带隙变化的1.4倍。

GaAs/Al（0.4）Ga（0.6）As多量子肼红外探测器光吸收计算

于2010-11-23批量导入

乳腺增生病p53基因第6外显子突变检测

目的 :探讨p5 3基因在乳腺癌发生早期的作用及早期诊断乳腺癌的分子病理指标。方法 :用PCR -SSCP检测36例乳腺单纯性增生、 31例不典型增生、 30例乳腺癌中p5 3基因第 6外显子突变 ,用DNA直接测序技术确定突变的碱基及其所在的密码子。结果 :乳腺单纯性增生、不典型增生、乳腺癌中p5 3基因第 6外显子的突变率分别为 0、6 5 % (2 / 31)、 13 3% (4/ 30 )。 6个点突变均为碱基替换 ,其中 4个发生于第 192密码子 (CAG→TAG) ,2个发生于第2 13密码子 (CGA→TGA) ,两者均导致多肽链合成提前终止。结论 :乳腺癌不典型增生中存在p5 3基因第 6外显子突变 ,该突变可能在乳腺不典型增生发展到乳腺癌过程中起重要作用 ,可作为早期诊断乳腺癌的辅助指标。

Growth and characterization of 0.8-mu m gate length AlGaN/GaN HEMTs on sapphire substrates

AlGaN/GaN high electron mobility transistor (HEMT) structures were grown on 2 inch sapphire substrates by MOCVD, and 0.8-mu m gate length devices were fabricated and measured. It is shown by resistance mapping that the HEMT structures have an average sheet resistance of approximately 380 Omega/sq with a uniformity of more than 96%. The 1-mm gate width devices using the materials yielded a pulsed drain current of 784 mA/mm at V-gs=0.5 V and V-ds=7 V with an extrinsic transconductance of 200 mS/mm. A 20-GHz unity current gain cutoff frequency (f(T)) and a 28-GHz maximum oscillation frequency (f(max)) were obtained. The device with a 0.6-mm gate width yielded a total output power of 2.0 W/mm (power density of 3.33 W/mm) with 41% power added efficiency (PAE) at 4 GHz.

Evaluating 0.53 eVGaInAsSbthermophotovoltaic diode based on an analytical absorption model

Radiant heat conversion performance dominated by the active layer of Ga0.84In0.16As0.14Sb0.86 diode has been systematically investigated based on an analytic absorption spectrum, which is suggested here by numerically fitting the limited experimental data. For the concerned diode configuration, our calculation demonstrates that the optimal base doping is 3-4 x 10(17) cm(-3), which is less sensitive to the variation of the external radiation spectrum. Given the scarcity of the alloy elements, an economical device configuration of the 0.2-0.6 mu m emitter and the 4-6 mu m base would be particularly acceptable because the corresponding conversion efficiency cannot exhibit discouraging degradation in comparison to the one for the optimal structure, the thickness of which may be up to 10 mu m. More importantly, the method we suggested here to calculate alloy absorption can be easily transferred to other composition, thus bringing great convenience for design or optimization of the optoelectronic device formed by these alloys.

Synthesis and Electrical Properties of New Solid State Electrolyte Materials Ce6-xHoxMoO15-delta(0.0 <= x <= 1.2)

Ce6-xHoxMoO15-delta(0.0 <= x <= 1.2) was synthesized by modified sol-gel method and characterized by differential X-ray diffraction(XRD), Raman, and X-ray photoelectron spectroscopy(XPS) methods. The oxide ionic conductivity of the samples was investigated by AC impedance spectroscopy. It shows that all the samples are single phase with a cubic fluorite structure. The solid solution Ce6-xHoxMoO15-delta(x=0.6) was detected to be the best conducting phase with the highest conductivity(sigma(t)=1.05x10(-2) S/cm) at 800 degrees C and the lowest activation energy(E-a=1.09 eV). These properties suggest that this kind of material has a potential application in intermediate-low temperature solid oxide fuel cells.

Effect of strontium substitution on the activity of La2-xSrxNiO4 (x=0.0-1.2) in NO decomposition

The aim of this work is to study the effect of Sr substitution on the redox properties and catalytic activity of La2-xSrxNiO4 (x = 0.0-1.2) for NO decomposition. Results suggest that the x = 0.6 sample shows the highest activity. The characterization (TPD, TPR, etc.) of samples indicates that the x = 0.6 sample possesses suitable abilities in both oxidation and reduction, which facilitates the proceeding of oxygen desorption and NO adsorption. At temperature below 700 degrees C, the oxygen desorption is difficult, and is the rate-determining step of NO decomposition. With the increase of reaction temperature (T > 700 degrees C), the oxygen desorption is favorable and, the active adsorption of NO on the active site (NO + V-o + Ni2+ -> NO--Ni3+) turns out to be the rate-determining step. The existence of oxygen vacancy is the prerequisite condition for NO decomposition, but its quantity does not relate much to the activity.

Electrolummescence from (5)Do -> F-7(J) and D-5(1) -> F-7(J) (J=0-4) transitions with a europium complex as emitter

Electroluminescence (EL) devices with Eu(HTH)(3)phen [HTH: 4,4,5,5,6,6,6-heptafluoro-1-(2-thienyl)-1,3-hexanedione, phen: I 10-phenanthroline] as an emissive centre were fabricated using vacuum evaporation. In addition to the Eu3+ 5D0 --> F-7(J) (J = 0-4) lines that were visible in the photoluminescence signal, the device also showed strong emission from the D-5(1) --> F-7(J) (J = 0-4) transitions. The enhanced emission from the D-5(1) F-7(J) (J = 0-4) transitions was attributed to the increased excitation intensity in the EL device. The luminescence lifetimes of the 5 D, and 5 Do levels were measured to be 0.6 mus and 866 mus, respectively.

Crystallographic and electrochemical characteristics of La0.7Mg0.3Ni3.5-x (Al0.5Mo0.5)(x) (x=0-0.8) hydrogen storage alloys

The crystal structure, hydrogen storage property and electrochemical characteristics of the La0.7Mg0.3Ni3.5-x(Al0.5Mo0.5), (x=0-0.8) alloys have been investigated systematically. It can be found that with X-ray powder diffraction and Rietveld analysis the alloys are of multiphase alloy and consisted of impurity LaNi phase and two main crystallographic phases, namely the La(La, Mg)(2)Ni-9 phase and the LaNi5 phase, and the lattice parameter and the cell volume of both the La(La, Mg)(2)Ni-9 phase and the LaNi5 phase increases with increasing A] and Mo content in the alloys. The P-C isotherms curves indicate that the hydrogen storage capacity of the alloy first increases and then decreases with increasing x, and the equilibrium pressure decreases with increasing x. The electrochemical measurements show that the maximum discharge capacity first increases from 354.2 (v = 0) to 397.6 mAh g(-1) (x = 0.6) and then decreases to 370.4 mAh g(-1) (x= 0.8). The high-rate dischargeability of the alloy electrode increases lineally from 55.7% (x=0) to 73.8% (x=0.8) at the discharge current density of 1200 mA g(-1). Moreover, the exchange current density of the alloy electrodes also increases monotonously with increasing x.

La_(1-x)Nd_xCrO_3(0.0≤x≤1.0)的化学键参数计算

使用复杂晶体化学键理论计算了La1-xNdxCrO3 (x =0 .0 ,0 .2 ,0 .4,0 .6 ,0 .8,1.0 )的化学键参数 ,如键性、键极化率等。结果表明 ,La-O ,Nd -O和Cr-O键的共价性基本上不随Nd掺杂的变化而变化 ,这个结论与实验结果一致。键极化率和磁距则随着掺杂量的增加而增加。共价性的大小次序为La -O