165 resultados para piezoelectric oscillator


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In the framework of the effective-mass envelope-function theory, the electronic and optical properties of a spherical core-shell quantum-dot quantum well (QDQW) structure with one and two wells have been investigated. The results show that the energies of electron and hole states depend sensitively on the well thickness and core radius of quantum-dot quantum well structure. An interesting spatially separated characteristic of electron and hole in QDQW is found and enhanced significantly in the two-wells case. The normalized oscillator strength for the optical transition between the electron and hole states in QDQW exhibits a deep valley at some special well thickness. The Coulomb interaction between the electron and hole is also taken into account. [S0163-1829(98)02412-6].

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This paper describes the ground target detection, classification and sensor fusion problems in distributed fiber seismic sensor network. Compared with conventional piezoelectric seismic sensor used in UGS, fiber optic sensor has advantages of high sensitivity and resistance to electromagnetic disturbance. We have developed a fiber seismic sensor network for target detection and classification. However, ground target recognition based on seismic sensor is a very challenging problem because of the non-stationary characteristic of seismic signal and complicated real life application environment. To solve these difficulties, we study robust feature extraction and classification algorithms adapted to fiber sensor network. An united multi-feature (UMF) method is used. An adaptive threshold detection algorithm is proposed to minimize the false alarm rate. Three kinds of targets comprise personnel, wheeled vehicle and tracked vehicle are concerned in the system. The classification simulation result shows that the SVM classifier outperforms the GMM and BPNN. The sensor fusion method based on D-S evidence theory is discussed to fully utilize information of fiber sensor array and improve overall performance of the system. A field experiment is organized to test the performance of fiber sensor network and gather real signal of targets for classification testing.

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A novel ultra low power temperature sensor for UHF RFID tag chip is presented. The sensor consists of a constant pulse generator, a temperature related oscillator, a counter and a bias. Conversion of temperature to digital output is fulfilled by counting the number of the clocks of the temperature related oscillator in a constant pulse period. The sensor uses time domain comparing, where high power consumption bandgap voltage references and traditional ADCs are not needed. The sensor is realized in a standard 0.18 mu m CMOS process, and the area is only 0.2mm(2). The accuracy of the temperature sensor is +/- 1 degrees C after calibration. The power consumption of the sensor is only 0.9 mu W.

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The prototype wafer of a low power integrated CMOS Transmitter for short-range biotelemetry application has been designed and fabricated, which is prospective to be implanted in the human brain to transfer the extracted neural information to the external computer. The transmitter consists of five parts, a bandgap current regulator, a ring oscillator, a buffer, a modulator and a power transistor. High integration and low power are the most distinct criteria for such an implantable integrated circuit. The post-simulation results show that under a 3.3 V power supply the transmitter provides 100.1 MHz half-wave sinusoid current signal to drive the off-chip antenna, the output peak current range is -0.155 mA similar to 1.250 mA, and on-chip static power dissipation is low to 0.374 mW. All the performances of the transmitter satisfy the demands of wireless real-time BCI system for neural signals recording and processing.

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This paper proposes a novel, fast lock-in, phase-locked loop (PLL) frequency synthesizer. The synthesizer includes a novel mixed-signal voltage-controlled oscillator (VCO) with a direct frequency presetting circuit. The frequency presetting circuit can greatly speed up the lock-in process by accurately the presetting oscillation frequency of the VCO. We fully integrated the synthesizer in standard 0.35 mu m, 3.3 V complementary metal-oxide-semiconductors (CMOS) process. The entire chip area is only 0.4 mm(2). The measured results demonstrate that the synthesizer can speed up the lock-in process significantly and the lock-in time is less than 10 mu s over the entire oscillation frequency range. The measured phase noise of the synthesizer is -85 dBc/Hz at 10 kHz offset. The synthesizer avoids the tradeoff between the lock-in speed and the phase noise/spurs. The synthesizer monitors the chip temperature and automatically compensates for the variation in frequency with temperature.

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High efficiency, TEM00 mode, high repetition rate laser pumped by 887 nm is reported. 20.1 W output laser emitting at 1064 nm is achieved in a 0.3 at % Nd-doped Nd:YVO4, which absorbs pumping light of 30.7 W at 887 nm. The opto-optic efficiency and the slope efficiency are 65.5 and 88.5%, respectively. The stable Q-switching operation worked well at 100 kHz and the beam quality is near diffraction-limit with M-2 factor measured as M-2 approximate to 1.2. And the pulse waveform is analyzed in this paper.

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The influence of band bending and polarization on the valence band offset measured by x-ray photoelectron spectroscopy (XPS) is discussed, and a modification method based on a modified self-consistent calculation is proposed to eliminate the influence and thus increasing the precision of XPS. Considering the spontaneous polarization at the surfaces and interfaces and the different positions of Fermi levels at the surfaces, we compare the energy band structures of Al/Ga-polar AlN/GaN and N-polar GaN/AlN heterojunctions, and give corrections to the XPS-measured valence band offsets. Other AlN/GaN heterojunctions and the piezoelectric polarization are also introduced and discussed in this paper.

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Tunable biaxial stresses, both tensile and compressive, are applied to a single layer graphene by utilizing piezoelectric actuators. The Gruneisen parameters for the phonons responsible for the D, G, 2D and 2D' peaks are studied. The results show that the D peak is composed of two peaks, unambiguously revealing that the 2D peak frequency (omega(2D)) is not exactly twice that of the D peak (omega(D)). This finding is confirmed by varying the biaxial strain of the graphene, from which we observe that the shift of omega(2D)/2 and omega(D) are different. The employed technique allows a detailed study of the interplay between the graphene geometrical structures and its electronic properties.

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本文提出了一种新的飞行器三维航迹规划方法—SDS。该方法能够在具有预先未知威胁的飞行环境中在线实时航迹规划。当飞行器上装备的探测器探测到飞行环境中有预先未知的威胁出现时,根据探测到的信息及时更新威胁数据。SDS根据新环境信息局部修正受到影响的航迹段来获得新的全局最优航迹。在每一时刻考虑当前已知的信息下,SDS生成的航迹是满足要求的最优航迹。

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We report the generation of ultrashort pulses in ytterbium-doped fibre oscillator emitting around 1.05 mum at a repetition rate of 17.6MHz. A diode laser with single silica fibre at 976 nm pumps the ytterbium fibre laser, the all-fibre picosecond pulsed oscillator has excellent stability and compact size, and freedom from misalignment. After amplifying, pulse energy of 3.4 nJ and an average power of 60mW are obtained. The compression is obtained with a grating pair out of the cavity. The compressor produces 307 fs with the peak power 5.47 kW. A practical fibre-based source with good performance is thus demonstrated.

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We present a novel high-energy, single-mode, all-fiber-based master-oscillator-power-amplifier (MOPA) laser system operating in the C-band with 3.3-ns pulses and a very widely tunable repetition rate, ranging from 30 kHz to 50 MHz. The laser with a maximum pulse energy of 25 mu J and a repetition rate of 30 kHz is obtained at, a wavelength of 1548 nm by using a double-clad, single-mode, Er:Yb co-doped fiber power amplifier.

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PZT陶瓷粉体的制备和研究。用溶胶一凝胶法制备了错钦酸铅Pb(Zr_(0.52)Ti_(0.48))O_3(PZT),研究了溶剂乙二醇单甲醚和水的比例对PZT的晶化温度和晶粒尺寸的影响,结果表明,随溶剂比例的增大,PZT粉体的晶化温度升高晶粒尺寸增大,当V(C_3H_9O_2)/V(H_2O)=4.47时,不仅缩短了溶胶-凝胶过程的时间,且得到的PZT粉体晶化温度低(443℃),晶粒的粒径分布集中(60-70nm)。PZT掺杂压电陶瓷的制备和研究。用同一主族元素对PZT进行掺杂改性实验,制备了Ca-PZT,Sr-PZT,Ba-PZT三个系列的压电陶瓷体系,其中每个体系中又包含1%、3%、5%、7%、9%(10%,11%)不同的掺杂量。经过压片,蒸镀电极,极化处理后测定其由,常数,结果表明,Ba离子的半径是最适合掺杂的离子半径。PZT和PbTIO。(PT)稳定溶胶的制备。在溶胶形成过程中,通过调整溶剂乙二醇单甲醚和水的比例,并加入适当量的乙酞丙酮作稳定剂,在有水体系下制备稳定的PZT和PT溶胶前驱体。该方法省略了制备中的蒸馏过程,简化了PZT和PT稳定溶胶的制备工艺。PZT铁电薄膜的制备。用自制的溶胶进行旋涂制膜,制备了膜层厚度不同的PZT和PT-PZT薄膜,在不同的锻烧温度,锻烧时间下处理为晶态膜,并对晶态膜进行表征,证明获得了钙钦矿结构的PZT晶态膜。

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尽管体细胞核移植(somatic cell nuclear transfer, SCNT)技术仍然处于 起步发展阶段,但是随着体细胞核移植技术在近些年来的飞速发展,人们已经得 到了多种哺乳动物体细胞核移植的存活后代。体细胞核移植技术在生物医药、农 业及其它领域的应用显示了这项技术的巨大发展前景。另一方面,人们发现体细 胞核移植效率低下并且体细胞克隆动物存在许多缺陷,这些主要是由于核移植技 术,供体细胞选择,体外培养系统以及卵母细胞的状态等的差异导致的。本研究 主要围绕着这些因素在体细胞核移植过程中对于克隆胚胎植入前后发育的影响 而开展,目的在于提高体细胞核移植的效率。 实验一,研究了几个因素对克隆胚胎发育和克隆效率的影响,为提高体细胞 核移植效率提供一些依据。这部分研究主要包括四倍体半克隆小鼠研究和蛋白酶 体抑制剂在克隆胚胎和孤雌激活胚胎发育中的影响。四倍体体细胞半克隆 (tetraploid semi-cloned , TSC)胚胎的体外发育结果表明,虽然TSC 胚胎可 能避免二倍体半克隆胚胎发育过程中的非整倍体现象,但是仍然不能形成胎儿。 另外,利用蛋白酶体抑制剂MG132 处理克隆胚胎的结果表明,虽然MG132 通过抑 制成熟促进因子(maturation promoting factors,MPF)活性的降低可以提高 克隆胚胎的体外发育率,但是没有改变克隆胚胎的质量。 实验二,研究了克隆技术在克隆胚胎构建和发育上的影响。首先,我们研究 了完整颗粒细胞注射到卵母细胞中所引起的变化。我们发现完整的颗粒细胞注入 到卵母细胞中之后很快引起细胞膜裂解和细胞核碎裂,从而导致激活后重构胚胎 的碎裂。这一实验表明完整供体细胞核注入的方法不适用于小鼠体细胞克隆。接 下来我们研究了不同的核移植技术――利用piezo 的直接注射法(piezoelectric microinjection,PEM)和电融合法(Electrofusion,EF)――对植入前后的克隆胚 胎以及出生后的克隆动物的影响。研究的结果发现,在PEM 法中,提高piezo 脉 冲的强度会导致供体细胞核DNA 断裂增加,使植入前克隆胚胎的细胞数目减少, 凋亡增加,从而降低克隆胚胎的质量。相反,在用EF 法产生的胚胎中细胞核DNA 的断裂很少,克隆胚胎质量相对较好。实验的结果表明,由于两种克隆技术利用 的原理不同,会对克隆胚胎的发育产生一定的影响,从而改变克隆的效率。 实验三,研究了猕猴体细胞克隆胚胎早期发育过程中细胞核内有丝分裂器蛋 白[Nuclear Mitotic Apparatus Protein,NuMA]的表达和分布。尽管在有些猕猴体 细胞核移植胚胎中没有检测到NuMA 的正确表达和分布并且有些胚胎出现了微 管组装异常,但是大多数猕猴体细胞核移植胚胎具有正常的NuMA 蛋白表达和 正常的核型。通过改进操作技术我们得到了可以发育到正常囊胚的猕猴体细胞核 移植胚胎。这些结果提示猕猴SCNT 胚胎发育失败的原因不是NuMA 等重要蛋 白的缺失。

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A new active antenna structure with applications in quasi-optical power combining is described. The active antenna combines a slotline FET oscillator with a notch antenna. The new structure was successfully used to create both E-plane and H-plane linear arrays as well as a 2-D array. Preliminary results of radiation patterns and the power combining efficiencies of the arrays are discussed.

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Absorption spectra of YAlO3:Nd for the three crystallographic axes are investigated at room temperature, The spectral strengths indicate that the absorption coefficient of YAlO3:Nd is anisotropic. The anisotropy of the local electric field acting on the rare-earth ion in a laser crystal is considered, An extended Judd-Ofelt theory is applied to calculate the absorption cross sections and oscillator strengths of the electric-dipole transitions in the different principal directions. Three groups of the phenomenological parameters are derived from a least-squares-fitting procedure. We also analyze theoretically the anisotropy of the optical absorption of YAlO3:Nd crystal in detail. (C) 1997 American Institute of Physics.