Low-temperature (10 K) infrared measurement of interstitial oxygen in heavily antimony-doped silicon via wafer thinning

A new technique is reported for the rapid determination of interstitial oxygen in heavily Sb-doped silicon. This technique includes wafer thinning and low-temperature 10 K infrared measurement on highly thinned wafers. The fine structure of the interstitial oxygen absorption band around 1136 cm(-1) is obtained. Our results show that this method efficiently reduces free-carrier absorption interference, allowing a high reliability of measurement, and can be used at resistivities down to 1 x 10(-2) Omega cm for heavily Sb-doped silicon.

Subband separation energy dependence of intersubband relaxation time in wide quantum wells

Subband separation energy dependence of intersubband relaxation time in a wide quantum well (250 Angstrom) was studied by steady-state and time-resolved photoluminescence. By applying a perpendicular electrical field, the subband separation energy in the quantum well is continuously tuned from 21 to 40 meV. As a result, it is found that the intersubband relaxation time undergoes a drastic change from several hundred picoseconds to subpicoseconds. It is also found that the intersubband relaxation has already become very fast before the energy separation really reaches one optical phonon energy. (C) 1997 American Institute of Physics.

Radiation hardness characteristic of N-implanted and F-implanted SIMOX/NMOSFET

Radiation hardness of SIMOX(separation by implanted oxygen)/NMOSFET by implanting N and F ion has been carefully studied in this paper.Both N and F ion implantation can reduce hole traps in the buried oxide and the interfacial regions,which consequently improves the radiation hardness,especially under high dose radiation conditions.Moreover,experimental data show that the higher dose of the N and F ion implantation is,the better radiation hardness is achieved.In order to minimize the influence on the threshold voltage of devices,it is important to choose suitable implantation dose and energy of N or F implantation that have smaller impact on the preradiation device performance.

具有复合埋层的新型SIMON材料的制备

采用氮氧共注入方法制备了新型的SIMON(separation by implanted oxygen and nitrogen)SOI材料.采用不同的制备方法分别制作出样品并进行了结构测试和分析,发现SIMON材料的结构和质量对注入条件和退火工艺非常敏感.并对各种氮氧复合注入技术做了分析和比较,发现氮氧分次注入可以得到更好的结构和性能.

Measurement of Cavity Loss and Quasi-Fermi-Level Separation for Fabry-Perot Semiconductor Lasers

A fitting process is used to measure the cavity loss and the quasi-Fermi-level separation for Fabry- Perot semiconductor lasers. From the amplified spontaneous emission (ASE) spectrum, the gain spectrum and single-pass ASE obtained by the Cassidy method are applied in the fitting process. For a 1550nm quantum well InGaAsP ridge waveguide laser, the cavity loss of about ～24cm~(-1) is obtained.

大剂量氧注入硅中的再分布理论及其快速计算

在大剂量氧注入硅形成SIMOX(separation by IMplanted OXygen)的物理过程分析基础上,根据单原子衬底注入过程中溅射产额与核阻止本领的本质联系,首次得到O~+对硅表面溅射产额与注入能量的简洁关系式,同时提出埋SiO_2中的氧将主要向上界面扩散,排除了以前的作者在研究SIMOX材料各层厚度时采用拟合参数引起的计算不确定性.在考虑了主要的大剂量注入效应,如体积膨胀、表面溅射、氧在SiO_2内的快速扩散等等,得到氧在硅中的深度分布,经过超高温退火,认为氧硅发生完全的化学分凝,据此设计出快速计算大剂量、高束流氧注入后的最终氧分布的模拟程序POISS(Program of Oxygen Implantaion intion Silicon Substrate),能够较为准确地反映SIMOX材料的特征厚度.本程序已用于该所的SIMOX材料研究制中.

Determination of interstitial oxygen concentration in heavily doped silicon by combination of neutron irradiation and FTIR

于2010-11-23批量导入