黄土退耕坡地植物根系分布特征及其对土壤养分的影响

为明确黄土退耕坡地植物根系分布特征及其对土壤养分的影响,在陕西神木六道沟流域选取退耕30 a的长芒草坡地和裸地坡面,利用图像处理和常规分析方法研究了长芒草根系和土壤养分在土壤剖面分布及其相互关系。结果表明: 长芒草根系主要分布在0～50 cm土层,分布规律可用指数函数来模拟。有根系存在的土壤表层有机质、全氮、全磷、硝态氮和铵态氮含量均高于无根系存在的坡面。在有根系存在时土壤有机质、全氮和硝态氮的具有明显的表聚现象。0～ 50 cm有机质、全氮、硝态氮和铵态氮随深度的变化可用幂函数来表示,而全磷随深度呈线性相关。0～50 cm的土壤养分与根长密度的关系可以用线性函数来表示。其研究结果为坡面退耕地土壤管理提供科学依据。

稀土/高聚物杂化材料的制备及发光性能的研究

本论文旨在开发能使无机材料和有机材料的功能互补、协同优化的无机/有机复合发光材料的制备方法，并研究其发光性质，以发展一类新型的高性能发光材料。首先基于无机组份与有机组份的物理和化学性质的差异，采用能保持其性质均不改变的低温软化学合成法-溶胶-凝胶技术，无机组份选择具有优良光、热稳定性的SiO_2，有机组份选择具有和无机SiO_2相似折射率和优良力学性能的丙烯酸类如甲基丙烯酸甲酯(MMA)和甲基丙烯酸羟乙酯(HEMA)，采用两步溶胶-凝胶法和在交联剂3-(三甲氧基硅)丙基甲基丙烯酸酯(MSMA)存在下快速制备了两种杂化基质材料SiO_2/P(MMA-MSMA)和SiO_2/P(HEMA-MSMA)。由于使用两步溶胶-凝胶法，大大缩短了溶胶的成胶时间，所得杂化材料具有良好的光学透明性。实验结果表明，在基质材料中形成了无机网络和聚合物网络，无机相和有机相之间存在着强的化学键，两相间无明显的界面，即形成了互穿网络，粒子的尺寸在100 nm以内，属于纳米材料。由于原位聚合物与无机SiO_2基质同时生成，不仅使杂化基质材料具有一定的韧性，而且可有效降低无机SiO_2凝胶基质的热聚集和光损耗，是制备复合发光材料的优良基质材料。由于TiO_2基质具有较低的声子能量(可降低发光组份的非辐射跃迁几率)，也是一种良好的基质材料。研究了在DMF存在下透明TiO_2凝胶基质的快速制备方法。由于DMF上的氮原子可和Ti-OH上羟基形成氢键，从而大大降低了钛酸丁酯的水解速率，避免了钛酸丁酯直接水解时沉淀的出现，通过调节DMF的用量，可以在不同时间内制备透明的TiO_2凝胶。凝胶经热处理后，其结构从无定型态转变为锐钛矿相，经800℃热处理后己全部转变为会红石相。此制备方法不仅快速，而且比现有的溶胶-凝胶法制备金红石相TiO_2的温度至少降低了200℃。基于高分子聚合物聚乙烯醇缩丁醛(PVB)具有良好的成膜性能，采用旋转涂敷法制备了SiO_2/PVB杂化膜，通过调节溶胶的粘度和匀胶的速度，可以制备不同厚度的薄膜，为杂化发光膜的制备提供了依据。基于1,1,4,4-四苯基-1,3-丁二烯(TPB)在蓝光波段其有优良的发光性能，制备了掺杂TPB的SiO_2凝胶，并研究其在溶胶-凝胶过程中光谱性质的变化。由于凝胶基质的“笼保护”效应，掺杂于溶胶-凝胶基质中的TPB具有较高的热稳定性，其热分解温度达460℃。TPB具有较高的猝灭浓度，相对于它的氯仿溶液，TPB在凝胶基质中猝灭浓度提高2～3个数量级。另外，在凝胶基质中比其在氯仿溶液中具有较长的荧光寿命，这对于此类发光材料的实用化具有重要意义。基于基质的组成、微结构及化学环境，可影响发光组份之间的相互作用和能量传递规律，制备了双掺UO_2~(2+)和Eu~(3+)的TiO_2凝胶。由于在TiO_2凝胶基质中Eu~(3+)的激发光谱和UO_2~(2+)的发射光谱具有较大的光谱重叠，研究了它们之间的能量传递机制。实验结果表明，在TiO_2凝胶中，存在着UO_2~(2+)向Eu~(3+)的能量传递过程，其能量转移效率和能量转移速率随Eu~(3+)浓度的增大而增大。通过对Stern-Volmer曲线的分析，得出Eu~(3+)对UO_2~(2+)荧光的猝灭机制主要为稳态猝灭机制，此研究为丌发新的发光材料提供了科学依据。为克服传统溶胶-凝胶法制备光功能材料时预先掺杂法的缺点和局限，缩短制备光功能材料的周期，基于溶胶-凝胶水解、缩聚的特点和稀土配合物的形成规律，首次提出应用两步溶胶-凝胶法于SiO_2基质中快速原位合成了稀土配合物的方法。它是即在用盐酸作为酸性催化剂水解一定时间的溶胶中，加入六次甲基四胺作为碱性催化剂。六次甲基四胺的加入，一方面，加快了凝胶的形成，另一方面，使溶胶的介质逐步适合配合物的形成，最终在凝胶基质的形成中原位合成了稀土配合物。由于采用两步溶胶-凝胶法，缩短了凝胶时间，可在数小时内制备出透明含原位配合物的湿凝胶。采用荧光光谱、吸收光谱、IR光谱及荧光寿命测量等手段，对原位合成稀土配合物的过程进行了跟踪表征。实验结果表明，对于水杨酸-Tb~(3+)配合物的原位合成，在溶胶阶段无配合物的形成，此时，水杨酸向Tb~(3+)的能量传递属于分子间能量传递过程，即扩散控制的碰撞过程；在湿凝胶中，Tb~(3+)与水杨酸形成了配合物，在紫外光激发下，通过水杨酸向Tb~(3+)的分子内能量转移，发出Tb~(3+)强烈的特征荧光。此复合光功能材料制备技术，具有一定的创新性和实用价值。应用上述两步溶胶一凝胶法于SiO_2及SiO_2/聚合物杂化基质中快速原位合成了稀土β-二酮、芳香羧酸及杂环配体phen配台物，并制备了稀土配合物SiO_2/PVB杂化发光薄膜。原位稀土配合物在紫外光激发下发出其相应稀土离子的特征谱线，和纯配合物相比，其激发光谱变为-不对称的宽带，发射光谱表现出较少的劈裂：山于杂化基质的保护作用，原位合成的稀土配合物具有较好的光稳定性和热稳定性；由于原位合成的配合物被固定于基质的微孔中，在IR光谱上，其相关振动吸收较弱；配合物的名义掺杂在0.6 mol%时，发光强度随掺杂浓度的增加而增加，无浓度猝灭现象；SEM表明，含有原位合成的配合物的材料，具有一定的均匀性，粒子尺寸在纳米级范围。为发展多种无机基质稀土有机配合物光功能材料的复合技术，拓宽无机/有机光功能材料的制备方法，首次采用离子交换法将稀土配合物Eu(DBM)_3phen和Tb(AA)_3phen嵌入到层状化合物α-磷酸氢锆(α-ZrP)中，制备了嵌有稀土配合物的组装体，并研究了组装体的光物理性质。基于层状化合物的结构特点，首先将对甲氧基苯胺(PMA)嵌入层状化合物中，得到预组装体，使层间距变大，然后再通过离子交换的方式，制得含有稀土配合物的组装体。XRD光谱和紫外-可见吸收光谱证明配合物组装进了层状化合物中。在紫外光激发下，组装体发出相应稀土离子的特征谱线；和纯配合物粉末相比，其激发光谱发生一定的蓝移，而其发射光谱则表现出较少的劈裂；由于基质的保护作用，组装体中的配合物具有较高的荧光寿命和发光效率。研究、制备了改性MCM-41与稀土配合物Eu(DBM)_3phen的复合组装体发光材料，并研究了组装体的发光性质。由于羟基的高能振动将极大地猝灭稀土离子的荧光发射，所以采用3-氨丙基三乙氧基硅烷、N-[(3-三乙氧基硅)]丙基乙二胺和4-(三乙氧基硅)丁氰三种硅烷化试剂对介孔分子筛MCM-41内壁羟基进行了修饰。组装体在紫外光激发下发出稀土离子的特征谱线，经氨丙基三乙氧基硅烷改性后的组装体，其发光强度约为未改性MCM-41前组装体的9倍，说明了经改性后，减少了基质中的羟基含量，降低了因羟基的高能振动而引起的非辐射跃迁几率，提高了组装体的荧光强度；对不同的改性剂的改性效果的研究表明，经4-(三乙氧基硅)丁氰改性、N-[(3-三乙氧基硅)]丙基乙二胺改性和3-氨丙基三乙氧基硅烷改性MCM-41改性后的的组装体的荧光强度依次增加，同时，稀土离子在其中的荧光寿命也依次增加。以上复合技术为研究和开发具有高效、长寿命的复合发光材料提供了新的可能。为满足不同条件下材料的要求，选择具有优良发光性能的稀土配合物，将其引入P(MAA-St)共聚物的合成过程中，制备了质轻、透明性好的掺杂有稀土配合物的透明发光树脂，并研究了发光树脂的光物理性质。透明发光树脂具有良好的透光性，密度在1.2 g/cm~3；在紫外光照射下，树脂发出稀土离子强烈的特征荧光，在掺杂浓度不大于4wt%时，发光强度随掺杂浓度的增大而增大。稀土配合物在发光树脂中较其在乙醇溶液中具有较长的荧光寿命。与其相应的纯配合物的乙醇溶液相比，稀土配合物在发光树脂中的周围环境极性增大，格位对称性升高。

高性能聚乙炔的合成、结构及性质

结果证明：1、结构与形态：（1）HPPA膜的顺式含量明显低于普通PA膜，最高不超过90%，且随催化剂Al/Ti比的降低而显著下降。改变催化剂的加热回流时间不影响所得含量可高达93.1%。另外，HPPA在快速拉伸过程中发生顺反异构化反应。（2）不管是顺式HPPA还是反式HPPA膜，其ESR谱线都为全对称的Loren tzian线型。（3）通过X-ray及电子衍射研究了HPPA的结晶及晶体结构，顺式HPPA的结晶度在76-80%范围内，反式HPPA膜的结晶度在72%左右。（4）在所选用的十种溶剂范围内，所得HPPA膜的形态都为微纤维结构，且与普通PA相比，纤维束堆积的比较紧密。2、物体机械性能与致密性：（1）HPPA膜具有较高的致密性，表观密度最高可达0.819/cm~3，N_2透过系数可下降到3.2 * 10~(-11)Jcm~3(STP)/cm~3·S·cmHg，且拉伸后的致密性更高。（2）通过改变催化剂回流时间及溶剂种类研究了HPPA膜强度的变化。（3）HPPA膜的热稳定性与普通PA相似，分解温度为460 ℃，并在130 ℃和320 ℃的DTA曲线上观察到顺反异构及结晶峰。（4）在所选溶剂范围内，所得HPPA膜对氧的吸收速率都明显低于普通PA膜，即具有较好的氧化稳定性。

蹄蝠科的核型进化：比较染色体涂色、G带和C带分析

：与其姐妹科(菊头蝠科)相比，蹄蝠科的细胞遗传学研究较少。迄今为止，仅少数蹄蝠科几个物种有高分辨率的G带核型报道，且有关该科核型进化的大多数结论都是基于常规Giemsa染色研究而得。该研究利用三叶小蹄蝠的染色体特异探针，通过比较染色体涂色、G和C显带，建立了5种蹄蝠的染色体同源性图谱，并探讨了它们同源染色体间的G和C带异同。结果表明：罗伯逊易位、臂内倒位以及异染色质的扩增可能是蹄蝠科物种核型进化的主要机制。通过对这5种蹄蝠物种及其外群物种之间的同源染色体片段的比较分析，作者推测蹄蝠科的祖先核型并不像先前认为的全由端着丝粒染色体组成, 而应该含有中着丝粒染色体。

STRUCTURAL DEFECTS AND THEIR ELECTRICAL-ACTIVITY IN GERMANIUM IMPLANTED SILICON

The electrical and structural characteristics of secondary defects in regrown amorphous layers formed in n-type Si(100) with a resistivity of 2 OMEGA cm and 6 OMEGA cm using Ge+ ions, has been studied. The amorphous layers with a thickness of 460 nm are formed by implantation of 1 x 10(15) Ge+ cm-2 at an energy of 400 keV. Both conventional furnace and rapid thermal annealing were used to regrow the amorphous layer and the residual defects have been characterised in terms of their concentration depth distribution and activation energies using C-V and DLTS. Structural information has been obtained from RBS and XTEM. By choosing suitable anneal conditions it is possible to eliminate extended defects, apart from a low concentration of end of range dislocation loops. However, a substantial population of electrically active point defects remain after simple low thermal budget anneals. In a sample implanted with 1 x 10(15) Ge+ cm-2 at 400 keV a region of deep donors approximately 460 nm from the surface is always present When the samples are annealed at higher temperatures (> 850-degrees the total deep donor concentration is reduced by one order of magnitude. Other electrically active defects not observable in the low (750-degrees-C) temperature annealed layers become apparent during anneals at intermediate temperatures.

A DUAL ION-BEAM EPITAXY SYSTEM

The design and characteristics of a dual ion beam epitaxy system (DIBE) are discussed. This system is composed of two beam lines, each providing a mass-separated ion beam converging finally with the other into the target chamber. The ions are decelerated and deposited on a substrate which can be heated to a temperature of 800-degrees-C. Currents of a few hundred microamperes are available for both beams and the deposit energies are in the range from tens to 1000 eV. The pressure of the target chamber during processing is about 7 x 10(-6) Pa. Preliminary experiments have proved that compound semiconductor materials such as GaN can be synthesized using the DIBE system.

CONSTRUCTION AND APPLICATIONS OF A DUAL MASS-SELECTED LOW-ENERGY ION-BEAM SYSTEM

A direct ion beam deposition system designed for heteroepitaxy at a low substrate temperature and for the growth of metastable compounds has been constructed and tested. The system consists of two mass-resolved low-energy ion beams which merge at the target with an incident energy range 50-25 000 eV. Each ion beam uses a Freeman ion source for ion production and a magnetic sector for mass filtering. While a magnetic quadrupole lens is used in one beam for ion optics, an electrostatic quadrupole lens focuses the other beam. Both focusing approaches provide a current density more than 100-mu-A/cm2, although the magnetic quadrupole gives a better performance for ion energies below 200 eV. The typical current of each beam reaches more than 0.3 mA at 100 eV, with a ribbon beam of about 0.3-0.5 x 2 cm2. The target is housed in an ultrahigh vacuum chamber with a base pressure of 1 x 10(-7) Pa and a typical pressure of 5 x 10(-6) Pa when a noncondensable beam like argon is brought into the chamber. During deposition, the target can be heated to 800-degrees-C and scanned mechanically with an electronic scanning control unit. The dual beam system has been used to grow GaN using a Ga+ and a N+ beam, and to study the oxygen and hydrogen ion beam bombardment effects during carbon ion beam deposition. The results showed that the simultaneous arrival of two beams at the target is particularly useful in compound formation and in elucidation of growth mechanisms.

Deep electron states in n-type Al-doped ZnS1-xTex grown by molecular beam epitaxy

Capacitance-voltage, photoluminescence (PL), and deep level transient spectroscopy techniques were used to investigate deep electron states in n-type Al-doped ZnS1-xTex epilayers grown by molecular beam epitaxy. The integrated intensity of the PL spectra obtained from Al-doped ZnS0.977Te0.023 is lower than that of undoped ZnS0.977Te0.023, indicating that some of the Al atoms form nonradiative deep traps. Deep level transient Fourier spectroscopy (DLTFS) spectra of the Al-doped ZnS1-xTex (x=0, 0.017, 0.04, and 0.046, respectively) epilayers reveal that Al doping leads to the formation of two electron traps 0.21 and 0.39 eV below the conduction band. DLTFS results suggest that in addition to the roles of Te as a component of the alloy as well as isoelectronic centers, Te is also involved in the formation of an electron trap, whose energy level with respect to the conduction band decreases as Te composition increases. Our results show that only a small fraction of Al atoms forms nonradiative deep defects, indicating clearly that Al is indeed a very good donor impurity for ZnS1-xTex epilayers in the range of Te composition being studied in this work. (C) 1997 American Institute of Physics. [S0021-8979(97)08421-1].

A 10-bit 50-MS/s sample-and-hold circuit with low distortion sampling switches

A fully-differential switched-capacitor sample-and-hold (S/H) circuit used in a 10-bit 50-MS/s pipeline analog-to-digital converter (ADC) was designed and fabricated using a 0.35-μm CMOS process. Capacitor fliparound architecture was used in the S/H circuit to lower the power consumption. In addition, a gain-boosted operational transconductance amplifier (OTA) was designed with a DC gain of 94 dB and a unit gain bandwidth of 460 MHz at a phase margin of 63 degree, which matches the S/H circuit. A novel double-side bootstrapped switch was used, improving the precision of the whole circuit. The measured results have shown that the S/H circuit reaches a spurious free dynamic range (SFDR) of 67 dB and a signal-to-noise ratio (SNR) of 62.1 dB for a 2.5 MHz input signal with 50 MS/s sampling rate. The 0.12 mm~2 S/H circuit operates from a 3.3 V supply and consumes 13.6 mW.

InGaAs／InPAPD探测器光电特性检测

建立了雪崩二极管的静态光电特性的自动测试系统．利用该系统对光．敏面的直径为500岬的台面型InGaAs/InP雪崩光电二极管（APDs）进行测试．测试结果表明，该APD器件在90％击穿电压下的暗电流为151nA，在直径500μm的光敏面上其光响应均匀性良好．提出一种测量雪崩二极管倍增因子的方法，只需利用普通的测量电流一电压的测试仪器，就可以获得开始倍增时的光电流，从而得到APD的倍增因子．通过该方法得到的InGaAs／InPAPD器件最大倍增因子的典型值在10-100量级．