Influence of implantation energy on the characteristics of Mn-implanted nonpolar a-plane GaN films

Nonpolar GaN Mn films have been fabricated by implanting Mn-ion into nonpolar a-plane (MO) GaN films at room temperature. The influence of implantation energy on the Structural, morphological and magnetic characteristics of samples have been investigated by means of stopping and range of ions in matter (SRIM) Simulation software, high-resolution X-ray diffraction (HRXRD), atomic force microscopy (AFM), and superconducting quantum interference device (SQUID). According to the SQUID analysis, obvious room temperature ferromagnetic properties of samples were detected. Moreover, the implantation energy has little impact on the ferromagnetic properties of samples. The XRD and AFM analyses show that the structural and morphological characteristics of samples were severely deteriorated with the increase of implantation energy. (C) 2008 Elsevier B.V. All rights reserved.

Dependence of current-voltage characteristics of pseudomorphic AlAs/In0.53Ga0.47As/InAs resonant tunnelling diodes on quantum well widths

This paper studies the dependence of I - V characteristics on quantum well widths in AlAs/In0.53Ga0.47As and AlAs/In0.53Ga0.47As/InAs resonant tunnelling structures grown on InP substrates. It shows that the peak and the valley current density in the negative differential resistance region are closely related with quantum well width. The measured peak current density, valley current densities and peak-to-valley current ratio of resonant tunnelling diodes are continually decreasing with increasing well width.

An investigation of the mode characteristics of SOI submicron rib waveguides using the film mode matching method

The mode characteristics of SOI (silicon-on-insulator) submicron rib waveguides are very different from those of micrometer-sized ones. Using the full-vector film mode matching method, we propose a simple criterion to determine whether a waveguide mode is guided or not. The single-mode condition for deep-etched waveguides is obtained using this criterion. We also obtain the inherent TM mode leakage and sharp cancelation effects due to TE-TM mode coupling in shallow-etched rib waveguides from numerical simulations, which agree well with the analytical results based on total internal reflection and interference theories.

Enhanced charge storage characteristics of silicon nanocrystals fabricated by electron-beam coevaporation of Si and SiOx(x=1 or 2)

In this article, a simple and flexible electron-beam coevaporation (EBCE) technique has been reported of fabrication of the silicon nanocrystals (Si NCs) and their application to the nonvolatile memory. For EBCE, the Si and SiOx(x=1 or 2) were used as source materials. Transmission electron microscopy images and Raman spectra measurement verified the formation of the Si NCs. The average size and area density of the Si NCs can be adjusted by increasing the Si:O weight ratio in source material, which has a great impact on the crystalline volume fraction of the deposited film and on the charge storage characteristics of the Si NCs. A memory window as large as 6.6 V under +/- 8 V sweep voltage was observed for the metal-oxide-semiconductor capacitor structure with the embedded Si NCs.

Structural, morphological, and magnetic characteristics of Cu-implanted nonpolar GaN films

Diluted magnetic nonpolar GaN:Cu films have been fabricated by implanting Cu ions into unintentionally doped nonpolar a-plane(1 1 (2) over bar 0) GaN films and a subsequent thermal annealing process. The structural, morphological and magnetic characteristics of the samples have been investigated by means of high-resolution X-ray diffraction (HRXRD), atomic force microscopy (AFM), and superconducting quantum interference device (SQUID). The sample shows a clear ferromagnetism behavior at room temperature. It is significantly shown that with a Cu concentration as low as 0.75% the sample exhibits a saturation magnetization about 0.65 mu(B)/Cu atom. Moreover, the possible origin of the ferromagnetism for the sample was also discussed briefly. (C) 2009 Elsevier B. V. All rights reserved.

The impact of implantation dose on the characteristics of diluted-magnetic nonpolar GaN:Cu films

Diluted-magnetic nonpolar GaN:Cu films have been fabricated by implanting Cu ions into p-type nonpolar a-plane (1120) GaN films with a subsequent thermal annealing process. The impact of the implantation dose on the structural. morphological and magnetic characteristics of the samples have been investigated by means of high-resolution X-ray diffraction (HRXRD). atomic force microscopy (AFM), and superconducting quantum interference device (SQUID). The XRD and AFM analyses show that the structural and morphological characteristics of samples deteriorated with the increase of implantation dose. According to the SQUID analysis. obvious room-temperature ferromagnetic properties of samples were detected. Moreover, the saturation magnetization per Cu atom decreased as the implantation dose increased. (C) 2009 Elsevier B.V. All rights reserved.

Photoluminescence characteristics of GaAsSbN/GaAs epilayers lattice-matched to GaAs substrates

The photoluminescence (PL) characteristics of GaAsSbN/GaAs epilayers grown by molecular beam epitaxy (MBE) are carefully investigated. The results show that antimony (Sb) incorporation into GaNAs material has less influence on the N-induced localization states. For the same N concentration, GaAsSbN material can reach an emission wavelength near 1.3 mum more easily than GaInNAs material. The rapid thermal annealing (RTA) experiment shows that the annealing induced rearrangement of atoms and related blueshift in GaAsSbN epilayers are smaller than those in GaNAs and GaInNAs epilayers. The GaAsSbN material can keep a longer emission wavelength near 1.3 mum-emission even after the annealing treatment. Raman spectroscopy analysis gives further insight into the structure stability of GaAsSbN material after annealing. (C) 2004 Elsevier Ltd. All rights reserved.

Optical characteristics of InAs quantum dots capped with short period GaAs/InAs superlattices and InGaAs combination layers

Long wavelength light emission was realized by capping InAs quantum dots (QDs) with short period GaAs/InAs superlattices (SLs) and an InGaAs strain-reducing layer (SRL). The optical properties were systematically investigated by photoluminescence tests. With increasing the periods of SLs, the emission wavelength of InAs QDs shifts from 1.27 to 1.53 mum. We explain the redshift as a result of the increased QD height with the SLs and the reduced strain in the dot caused by InGaAs SRL. (C) 2004 Published by Elsevier Ltd.

Microstructural and compositional characteristics of GaN films grown on a ZnO-buffered Si(111) wafer

Polycrystalline GaN thin films have been deposited epitaxially on a ZnO-buffered (111)-oriented Si substrate by molecular beam epitaxy. The microstructural and compositional characteristics of the films were studied by analytical transmission electron microscopy (TEM). A SiO2 amorphous layer about 3.5 nm in thickness between the Si/ZnO interface has been identified by means of spatially resolved electron energy loss spectroscopy. Cross-sectional and plan-view TEM investigations reveal (GaN/ZnO/SiO2/Si) layers exhibiting definite a crystallographic relationship: [111](Si)//[111](ZnO)//[0001](GaN) along the epitaxy direction. GaN films are polycrystalline with nanoscale grains (similar to100 nm in size) grown along [0001] direction with about 20degrees between the (1 (1) over bar 00) planes of adjacent grains. A three-dimensional growth mode for the buffer layer and the film is proposed to explain the formation of the as-grown polycrystalline GaN films and the functionality of the buffer layer. (C) 2004 Elsevier Ltd. All rights reserved.

Calibration of microwave network analyzer

This paper presents a systematic description of the methods for calibrating microwave network analyzer and test fixtures, and discusses the problems arising in the calibration. The general criteria for choosing calibration standards and corresponding algorithms are discussed and suggestions to overcome these problems and improve the calibration accuracy are also given. It has been found that for reciprocal test fixtures, the four equations obtained with the thru standard can be used at the same time. Meanwhile, the calibration accuracy can be improved. It has been shown that using the same calibration procedures but different algorithms may lead to the occurrence of frequency limitation.

Experimental verification on the origin of plateau-like current-voltage characteristics of resonant tunneling diodes

Current-voltage (I-V) characteristics of GaAs-based resonant tunneling diodes have been investigated in the presence of a perpendicular magnetic field. Electron resonant tunneling is strongly suppressed by the applied magnetic field, leading to peak current decreasing with increasing magnetic field. The observed plateau-like structures appear in negative differential resistance region on the I-V curves and are magnetic-field dependent. The plateau-like structures are due to the coupling between the energy levels in the emitter well and in the main quantum well. (C) 2004 American Institute of Physics.

Mode characteristics of semiconductor equilateral triangle microcavities with side length of 5-20 mu m

Semiconductor equilateral triangle microresonators (ETRs) with side length of 5, 10, and 20 mum are fabricated by the two-step inductively coupled plasma (ICP) etching technique. The mode properties of fabricated InGaAsP ETRs are investigated experimentally by photoluminescence (PL) with the pumping source of a 980-nm semiconductor laser and distinct peaks are observed in the measured PL spectra. The wavelength spacings of the distinct peaks agree very well with the theoretical longitudinal mode intervals of the fundamental transverse modes in the ETRs, which verifies that the distinct peaks are corresponding to the enhancement of resonant modes. The mode quality factors are calculated from the width of the resonant peaks of the PL spectra, which are about 100 for the ETR with side length of 20 mum.

Characteristics of band structures in 1D photonic crystals containing alternate left-right handed materials

This work investigated analytically the band structure of photonic crystals (PCs) with alternate layers of left and right-handed materials in one-dimension. It was found that, under certain conditions, new peculiar band structures not seen in all right-handed material PCs appeared. We transformed the analytic dispersion relation into two cosine terms, and obtained an interesting band structure using the new form of dispersion equation. Conditions for obtaining such peculiar band structure were given. (c) 2005 Elsevier Ltd. All rights reserved.

Characteristics of oxide-free InGaAlAs layers grown by narrow stripe selective MOVPE

Narrow stripe selective MOVPE has been used to grow high quality oxide-free InGaAlAs layers on an InP substrate patterned with SiO2 masks at optimized growth conditions. Mirror-like surface morphologies and abrupt cross sections are obtained in all samples without spike growth at the mask edge. For the narrow stripe selectively grown InGaAlAs layers with a mesa width of about 1.2 mu m, a bandgap wavelength shift of 70 nm, a photoluminescence (PL) intensity of more than 80% and a PL full width at half maximum (FWHM) of less than 60 meV are obtained simultaneously with a small mask width variation from 0 to 40 mu m. The characteristics of the thickness enhancement ratio and the PL spectrum dependence on the mask width are presented and explained by considering both the migration effect from a masked region and the lateral vapour diffusion effect.

Photoluminescence characteristics of InP annealed in phosphorus and iron phosphide ambiences

Photo luminescence (PL) spectroscopy has been used to study InP annealed in phosphorus and iron phosphide ambiences. Noticeable PL emissions related with thermally induced defects have been detected in undoped InP annealed in iron phosphide ambience. Origins of the PL emissions have been discussed. (c) 2004 Elsevier Ltd. All rights reserved.