Synthesis and properties of thermotropic copoly(ester imide)s

A series of copoly(ester imide)s is synthesized by thermal polycondensation of N,N'-hexane-1,6-diylbis(trimellitimide), p-hydroxybenzoic acid and diphenols with different structures. Their thermotropic liquid crystal properties are studied by DSC measurements and polarizing microscopy. II is found that the steric effect of nonlinear bisphenol modifiers is the most important factor in controlling the liquid crystallinity of the resulting copoly(ester imide)s.

Synthesis of a new series of chiral Schiff's bases and their copper complexes

A new series of chiral Schiff's bases containing 2-hydroxybenzilideneaniline moieties and their copper complexes were synthesized and studied by differential scanning calorimetry, polarized optical microscopy, X-ray diffraction and EPR measurement. The results show that most of the Schiff's bases and only two of the copper complexes exhibited chiral smectic liquid crystal phases.

Synthesis and characterization of thermotropic copolyesters and copoly(ester-amide)s containing oxyethylene-ether as the spacer

Flexible oxyethylene-ether was introduced into the aromatic copolyesters and copoly (ester-amide)s to reduce the melting point of resulting polymers. The melting point was greatly reduced to 200 degrees C or even lower in some cases, and the molecular weight was satisfactorily high as reflected by inherent viscosity. The polymers exhibited high thermal stability and good mechanical properties as determined by TGA and mechanical tests. The copolyester showed better crystallinity and liquid crystallinity than corresponding copoly (ester-amide)s with similar monomer composition as reflected by POM observation and WAXD study. The melting points for both copolyesters and copoly (ester-amide)s showed great dependence on the p-acetoxybenzoic acid (PAB) content in monomer composition and reached the lowest value when PAB was 29 mol%.

THE INFLUENCE OF GAMMA-RADIATION ON POLYAMIDE-1010 AGGREGATE STRUCTURES

The influence of gamma-radiation on polyamide 1010 aggregate structures and crystal damage were examined by using wide angle X-ray diffraction (WAXD) and small angle X-ray scattering (SAXS) techniques. The results revealed that some structural parameters of the aggregated state, the density differences and the degree of crystallinity W-c,W-x, essentially decreased with increasing radiation dose, but the specific surface O-s increased. Crosslinking and scission of irradiated polyamide 1010 samples occurred mainly in amorphous and interphase regions, and crystal damage and amorphization induced by gamma-radiation spread from the interphase and extended into the crystal phase with increasing radiation dose. This result also indicated that the (010) reflection with the hydrogen bond was more susceptible to the action of radiation.

多组分胆甾液晶/聚合物混合体系的相容性研究

本工作以甲基丙烯酸甲酯-甲基丙烯酸丁酯无规共聚物(Poly(MMA—CO—BMA))与三种胆甾液晶组成的多组分液晶混合体系(NCOC)共混,组成液晶聚合物分散体系PDLC(Polymer-dispersed Liquid Crystal)以改进液晶共混体系的稳定性。应用DSC和偏光显微镜对体系的相容性和相分离作了细致的研究。

Heat capacity and thermochemical study of trifluoroacetamide (C2H2F3NO)

The low-temperature heat capacities of trifluoroacetamide were precisely determined with a small sample precision automated adiabatic calorimeter over the temperature range from 78 to 404 K. A solid-to-solid phase transition, a fusion and a phase transition from a liquid crystalline phase to fully liquid phase have been observed at the temperatures of 336.911+/-0.102, 347.622+/-0.094 and 388.896+/-0.160 K, respectively. The molar enthalpies of these phase transitions as well as the chemical purity of the substance were determined to be 5.576+/-0.004, 11.496+/-0.007, 1.340+/-0.005 kJ mol(-1) and 99.30 mol%, respectively, on the basis of the heat capacity measurements. The molar entropies of the three phase transitions were calculated to be 16.550+/-0.012, 33.071+/-0.029 and 3.447+/-0.027 J mol(-1) K-1, respectively. Further researches of the thermochemical properties for this compound have been carried out by means of TG and DSC techniques. (C) 2000 Elsevier Science B.V. All rights reserved.

Study of Mn-based catalysts for oxidative dehydrogenation of cyclohexane to cyclohexene

The gas-phase oxidative dehydrogenation (ODH) of cyclohexane to cyclohexene in the presence of molecular oxygen has been studied over various Mn-based catalysts. It is found that LiCl/MnOx/PC (Portland cement) catalyst exhibits the highest catalytic performance, and a 42.8% cyclohexane conversion, 58.8% cyclohexene selectivity and 25.2% cyclohexene yield can be achieved under 600 degrees C, 20,000 h(-1) and C6H12/O-2/N-2= 14/7/79. There are good correlations between the selectivities to cyclohexene and the electrical conductivities of Li doped Mn-based catalysts, from which it is deduced that the non-fully reduced oxygen species (O-2(-), O-2(2-), O-) involved in a new phase of LiMn2O4 might be responsible for the high selectivity toward cyclohexene, whereas the Mn2O3 crystal phase results in the COx formation. The selectivity to cyclohexene increases with increasing molar ratio of Li to Mn in LiCl/ MnOx/PC.

Thermodynamic properties of ethanol and gasoline blended fuel

The heat capacities (C-p) of five types of gasohol (50 wt % ethanol and 50 wt % unleaded gasoline 93(#) (E50), 60 wt % ethanol and 40 wt % unleaded gasoline 93(#) (E60), 70 wt % ethanol and 30 wt % unleaded gasoline 93(#) (E70), 80 wt % ethanol and 20 wt % unleaded gasoline 93(#) (E80), and 90 wt % ethanol and 10 wt % unleaded gasoline 93(#) (E90), where the "93" denotes the octane number) were measured by adiabatic calorimetry in the temperature range of 78-320 K. A glass transition was observed at 95.61, 96.14, 96.56, 96.84, and 97.08 K for samples from the E50, E60, E70, E80, and E90 systems, respectively. A liquid-solid phase transition and a solid-liquid phase transition were observed in the respective temperature ranges of 118-153 and 155-163 K for E50, 117-150 and 151-164 K for E60, 115-154 and 154-166 K for E70, 113-152 and 152-167 K for E80, and 112-151 and 1581-167 K for E90. The polynomial equations of Cp and the excess heat capacities (C-p(E)), with respect to the thermodynamic temperature, were established through least-squares fitting. Based on the thermodynamic relationship and the equations obtained, the thermodynamic functions and the excess thermodynamic functions of the five gasohol samples were derived.

Ga1-xMnxSb grown on GaSb substrate by liquid phase epitaxy

The Gal(1-x)Mn(x)Sb epilayer was prepared on the n-type GaSb substrate by liquid phase epitaxy. The structure of the Gal(1-x)Mn(x)Sb epilayer was analyzed by double-crystal X-ray diffraction. From the difference of the lattice constant between the GaSb substrate and the Ga1-xMnxSb epilayer, the Mn content in the Ga1-xMnxSb epilayer were calculated as x = 0.016. The elemental composition of Ga1-xMnxSb epilayer was analyzed by energy dispersive spectrometer. The carrier concentration was obtained by Hall measurement. The hole concentration in the Ga1-xMnxSb epilayer is 4.06 x 10(19)cm(-3). It indicates that most of the Mn atoms in Ga1-xMnxSb take the site of Ga, and play a role of acceptors. The current-voltage curve of the Ga1-xMnxSb/GaSb heterostructure was measured, and the rectifying effect is obvious. (C) 2003 Elsevier B.V. All rights reserved.

InAs0.3Sb0.7 films grown on (100) GaSb substrates with a buffer layer by liquid-phase epitaxy

The growth of InAsxSb1-x films on (100) GaSb substrates by liquid-phase epitaxy (LPE) has been investigated and epitaxial InAs0.3Sb0.7 films with InAs0.9Sb0.09 buffer layers have been successfully obtained. The low X-ray rocking curve FHWM values of InAs0.3Sb0.7 layer shows the high quality of crystal-orientation structure. Hall measurements show that the highest electron mobility in the samples obtained is 2.9 x 10(4) cm(2) V-1 s(-1) and the carrier density is 2.78 x 10(16)cm(-3) at room temperature (RT). The In As0.3Sb0.7 films grown on (10 0) GaSb substrates exhibit excellent optical performance with a cut-off wavelength of 12 mu m. (c) 2007 Elsevier B.V. All rights reserved.

Liquid phase epitaxy of Al0.3Ga0.7As islands

Self-organized Al0.3Ga0.7As islands generated on the (100) facet are achieved by liquid phase epitaxy. Three particularly designed experimental conditions-partial oxidation, deficient solute and air quenching-result in defect-free nucleation. Micron-sized frustums and pyramids are observed by a scanning electron microscope. The sharp end of the tip has a radius of curvature less than 50 nm. It is proposed that such Al0.3Ga0.7As islands may be potentially serviceable in microscale and nanoscale fabrication and related spheres. (C) 2004 Elsevier B.V. All rights reserved.

Ga1-xMnxSb grown on GaSb substrate by liquid phase epitaxy

The Gal(1-x)Mn(x)Sb epilayer was prepared on the n-type GaSb substrate by liquid phase epitaxy. The structure of the Gal(1-x)Mn(x)Sb epilayer was analyzed by double-crystal X-ray diffraction. From the difference of the lattice constant between the GaSb substrate and the Ga1-xMnxSb epilayer, the Mn content in the Ga1-xMnxSb epilayer were calculated as x = 0.016. The elemental composition of Ga1-xMnxSb epilayer was analyzed by energy dispersive spectrometer. The carrier concentration was obtained by Hall measurement. The hole concentration in the Ga1-xMnxSb epilayer is 4.06 x 10(19)cm(-3). It indicates that most of the Mn atoms in Ga1-xMnxSb take the site of Ga, and play a role of acceptors. The current-voltage curve of the Ga1-xMnxSb/GaSb heterostructure was measured, and the rectifying effect is obvious. (C) 2003 Elsevier B.V. All rights reserved.

InAs0.3Sb0.7 films grown on (100) GaSb substrates with a buffer layer by liquid-phase epitaxy

The growth of InAsxSb1-x films on (100) GaSb substrates by liquid-phase epitaxy (LPE) has been investigated and epitaxial InAs0.3Sb0.7 films with InAs0.9Sb0.09 buffer layers have been successfully obtained. The low X-ray rocking curve FHWM values of InAs0.3Sb0.7 layer shows the high quality of crystal-orientation structure. Hall measurements show that the highest electron mobility in the samples obtained is 2.9 x 10(4) cm(2) V-1 s(-1) and the carrier density is 2.78 x 10(16)cm(-3) at room temperature (RT). The In As0.3Sb0.7 films grown on (10 0) GaSb substrates exhibit excellent optical performance with a cut-off wavelength of 12 mu m. (c) 2007 Elsevier B.V. All rights reserved.

Threshold reduction in strained-layer InGaAs/GaAs quantum well lasers by liquid phase epitaxy regrowth

When liquid phase epitaxy regrowth at 780 degrees C for 2 h is applied to the samples after molecular beam epitaxy, a decrease of the threshold current density in strained InGaAs/GaAs quantum well lasers by a factor of 3 to 4 is obtained. We suggest that this improvement is attributed to the reduction of nonradiative centers associated with deep levels at the three regions of the active region, the graded layer and the cladding layer. Indeed, a significant reduction of deep center densities has been observed by using minority and majority carrier injection deep level transient spectroscopy measurements. (C) 1998 Elsevier Science B.V. All rights reserved.

LIQUID-PHASE EPITAXY GROWTH AND PROPERTIES OF GAINASSB/ALGAASSB/GASB HETEROSTRUCTURES

The GaInAsSb/AlGaAsSb/GaSb heterostructures were grown by the liquid phase epitaxy (LPE) technique. The materials were characterized by means of optical microscopy, electroprobe microanalysis (EPMA), double-crystal X-ray diffraction, capacitance-voltage (C-V) and Van der Pauw measurments, infrared absorption spectra, photoluminescence and laser Raman scattering. The results show that the materials have fine surface morphology, low lattice mismatch and good homogeneity. Room-temperature light-emitting diodes with an emission wavelength of 2.2-mu-m were obtained by using the GaInAsSb/AlGaAsSb DH structures.