Outer space grown semi-insulating GaAs and its applications

GaAs single crystal has been grown in recoverable satellite. Hall measurements indicate that the GaAs shows semi-insulating behavior. The structural properties of the crystal have been improved obviously, and their uniformity has been improved as well. The stoichiometry and its distribution in space-grown GaAs are improved greatly compared with the GaAs single crystal grown terrestrially. The properties of integrated circuits made by direct ion-implantation on space-grown GaAs are better than those made on ground-grown materials. These results show that the stoichiometry in semi-insulating GaAs seriously affects the properties of related devices.

Improvement of stoichiometry in semi-insulating gallium arsenide grown under microgravity

A semi-insulating (SI) GaAs single crystal was recently grown in a retrievable satellite. The average etch pit density (EPD) of dislocations in the crystal revealed by molten KOH is 2.0 x 10(4) cm(-2), and the highest EPD is 3.1 x 10(4) cm(-2) This result indicates a quite good homogenity of the EPD which is much better than the ground-grown crystals. A similar better homogenity of the stoichiometry i.e., the [As]/([As] + [Ga]) ratio has been found in the space-grown SI-GaAs single crystal studied nondestructively using a new mapping method based upon X-ray Bond diffraction. The average stoichiometry in the space-grown crystal is 0.50007 with mean-square deviation of 6x10(-6), while the average stoichiometry in ground-grown SI-GaAs crystal is more than 0.50010. (C) 1998 Elsevier Science B.V. All rights reserved.

Growth of ZnO single crystal by chemical vapor transport method

ZnO crystals were grown by CVT method in closed quartz tube under seeded condition. Carbon was used as a transport agent to enhance the chemical transport of ZnO in the growth process. ZnO single crystals were grown by using GaN/sapphire and GaN/Si wafer as seeds. The property and crystal quality of the ZnO single crystals was studied by photoluminescence spectroscopy and X-ray diffraction technique.

Donor defect in P-diffused bulk ZnO single crystal

A high concentration of shallow donor defect is formed in P-diffused ZnO single crystals. X-ray photoelectron spectroscopy analysis indicates that P atom occupy different lattice site at different diffusion temperature. Nature of the donor defect has been discussed.

INVESTIGATION OF C-60 SINGLE-CRYSTAL BY X-RAY-METHODS

C-60 Single crystals grown by a single-temperature-gradient technique were characterized by synchrotron radiation white beam x-ray topography and x-ray double crystal diffraction with Cu K-alpha 1 radiation on conventional x-ray source. The results show that the crystal is rather well crystallized, The x-ray topographies give an evidence of dendritic growth mechanism of C-60 Single crystal, and x-ray double crystal diffraction rocking curve shows that there are mosaic structural defects in the sample. A phase transition st 249+/-1.5% K from a simple cubic to a face centered cubic structure is confirmed by in situ observation of synchrotron radiation white beam x-ray topography with the temperature varing from 230 to 295 K.

Space-grown SI-GaAs and its application

A semi-insulating GaAs single crystal ingot was grown in a recoverable satellite, within a specially designed pyrolytic boron nitride crucible, in a power-travelling furnace under microgravity. The crystal was characterized systematically and was used in fabricating low noise field effect transistors and analogue switch integrated circuits by the direct ion-implantation technique. All key electrical properties of these transistors and integrated circuits have surpassed those made from conventional earth-grown gallium arsenide. This result shows that device-grade space-grown semiconducting single. crystal has surpassed the best. terrestrial counterparts. Studies on the correlation between SI-GaAs wafers and the electronic devices and integrated circuits indicate that the characteristics of a compound semiconductor single crystal depends fundamentally on its stoichiometry.

Semi-insulating GaAs grown in outer space

A semi-insulating GaAs single crystal ingot was grown in a recoverable satellite, within a specially designed pyrolytic boron nitride crucible, in a power-traveling furnace under microgravity. The characteristics of a compound semiconductor single crystal depends fundamentally on its stoichiometry, i.e. the ration of two types of atoms in the crystal. a practical technique for nondestructive and quantitative measuring stoichiometry in GaAs single crystal was used to analyze the space-grown GaAs single crystal. The distribution of stoichiometry in a GaAs wafer was measured for the first time. The electrical, optical and structural properties of the space-grown GaAs crystal were studied systematically, Device fabricating experiments prove that the quality of field effect transistors fabricated from direct ion-implantation in semi-insulating GaAs wafers has a close correlation with the crystal's stoichiometry. (C) 2000 Elsevier Science S.A. All rights reserved.

Electrochemical fabrication of single-crystalline and polycrystalline Au nanowires: the influence of deposition parameters

We report the electrochemical growth of gold nanowires with controlled dimensions and crystallinity. By systematically varying the deposition conditions, both polycrystalline and single-crystalline wires with diameters between 20 and 100 nm are successfully synthesized in etched ion-track membranes. The nanowires are characterized using scanning electron microscopy, high resolution transmission electron microscopy, scanning tunnelling microscopy and x-ray diffraction. The influence of the deposition parameters, especially those of the electrolyte, on the nanowire structure is investigated. Gold sulfite electrolytes lead to polycrystalline structure at the temperatures and voltages employed. In contrast, gold cyanide solution favours the growth of single crystals at temperatures between 50 and 65 degrees C under both direct current and reverse pulse current deposition conditions. The single-crystalline wires possess a [110] preferred orientation.

Novel morphology of polyethylene crystals created upon melt crystallization of spin-coated film

We demonstrate a strikingly novel morphology of high-density polyethylene (HDPE) crystal obtained upon melt crystallization of spin-coated thin film. This crystal gives windmill-like morphology which contains a number of petals. A detailed inspection on this morphology reveals that each petal is actually composed of terrace-stacked PE lamellae, in which the polymer chains within crystallographic a-c planes adopt similar to 45 degrees tilting around b-axis. The surrounding domains associated with a petal of the windmill composed of twisted lamellar overgrowths with an identical orientation of their long axis, which is the crystallographic b-axis shared by the petal and its corresponding twisted lamellar overgrowths.

Facile preparation of macroscopic soft colloidal crystals with fiber symmetry

A facile, efficient way to fabricate macroscopic soft colloidal crystals with fiber symmetry by drying a latex dispersion in a tube is presented. A transparent, stable colloidal crystal was obtained from a 25 wt % latex dispersion by complete water evaporation for 4 days. The centimeter-long sample was investigated by means of synchrotron small-angle X-ray diffraction (SAXD). Analysis of a large number of distinct Bragg peaks reveals that uniaxially oriented colloidal crystals with face-centered cubic lattice structure were formed.

Stimulated emission from distyrylbenzene derivative crystals grown by vapor

Narrowed spectra at 452 nm from a thin platelike crystal of distyrylbenzene derivative, 2,5-diphenyl-1,4-distyrylbenzene with two trans double bonds (trans-DPDSB) grown by vapor deposition, are observed. The trans-DPDSB crystal is irradiated by the third harmonic (355 nm) of a Nd:YAG laser. The FWHM of the narrowed spectra can reach 6 nm for the crystal when the pumping energy is 400 mu J/pulse. The threshold value for an optically pumped laser is approximately 350 mu J/pulse.

Barycenter of energy of lanthanide 4f(N)-(1)5d configuration in inorganic crystals

A semiempirical method for the evaluation of the barycenter of energy of 4f(N-1)5d configurations is presented. The environmental factors affecting the barycenter are given to be the bond volume polarization, fractional covalence of the chemical bond between the central ion and the nearest anion, and presented charge of the nearest anion in the chemical bonds. The barycenter energies of 4f(N-1)5d configurations of Eu2+ and Ce3+ are calculated in various crystals, and the results are in good agreement with the experimental values. A relationship is found between the barycenter of energy of the 4f(N-1)5d configuration on Eu2+ method offers the advantage of applicability to a broad class of luminescence materials and initiates a link between macroscopic properties and microscopic structure.

Study on the phase behavior of BaEu2Mn2O7 through heat treatment of a single crystal

A new orthorhombic phase of BaEu2Mn2O7 with the space group of Ccmm (no.63) was identified for single crystals after heat treatment and its Crystal Structure was determined by single crystal X-ray diffractometry. The volume Of the unit cell has twice the fundamental tetragonal cell and corner-shared MnO6 octahedra are slightly distorted and Mn-O-Mn angle between the neighboring octahedra tilts with an angle by around 3 degrees from b-axis. It is concluded from the results of the heat treatment of single crystals at various temperatures that this orthorhombic phase changes into a tetragonal One With superstructure (P4(2)/mnm) at 402 K and changes once more into the fundamental tetragonal phase (I4/mmm) above 552 K. The tetragonal phase with superstructure which has been expected to be an unstable one is stable between the two temperatures.

Growth and vibrational spectra of doped KMgF3 single crystal

The different ions doped KMgF3 single crystals are prepared by the vertical Bridgman method. The near-infrared absorption spectra for different parts of all as-growth crystals indicate that there is the best transparency in middle part. The correlation between the vibronic frequencies of Eu2+ and the site displacement of Cu+ co-doped ions is firstly studied, which indicates that Cu+ ions replace the site of the Mg2+ ions. The co-doped Eu2+ counteracts the charge misfit causing by the replacement of Mg2+ with Cu+. The overlapping of the emission spectra of the Eu2+ and the excitation spectra of the Cu+ results in the energy transfer from Eu2+ to Cu+.

Liquid crystalline phases, microtwinning in crystals and helical chirality transformations in a main-chain chiral liquid crystalline polyester

A main-chain nonracemic chiral liquid crystalline polymer was synthesized from (R)-(-)4'-{w-[2-(p-hydroxy-o-nitrophenyloxy)-1-propyloxy]-1-decyloxyl-4-biphenylcarboxylic acid. This polymer contained 10 methylene units in each chemical repeating unit and was abbreviated PET(R*-10). On the basis of differential scanning calorimetry, wide-angle X-ray diffraction, and polarized light microscopy experiments, chiral smectic C (S-C*) and chiral smectic A (S-A*) phases were identified. Both flat-elongated and helical lamellar crystal morphologies were observed in transmission electron microscopy. Of particular interest was the flat-elongated lamellar crystals were constructed via microtwinning of an orthorhombic cell with dimensions of a = 1.42 nm, b = 1.28 nm, and c = 3.04 nm. On the other hand, the helical lamellar crystals were exclusively left-handed, which was opposite to the right-handed helical crystals grown in PET(R*-9) and PET(R*-11) (having 9 and 11 methylene units, respectively). Note that these three polymers had identical right-handed chiral centers (R*-). Therefore, a single methylene unit difference on the polymer backbones on an atomic length scale substantially changed the chirality of the crystals in the micrometer length scale. Furthermore, aggregates of these helical crystals in PET(R*-10) did not generate banded spherulites in polarized light microscopy. Possible reasons for this change and loss of helical senses (handedness) on different length scales in chirality transferring processes were discussed.