Effects of deposition rates on laser damage threshold of TiO2/SiO2 high reflectors

TiO2 single layers and TiO2/SiO2 high reflectors (HR) are prepared by electron beam evaporation at different TiO2 deposition rates. It is found that the changes of properties of TiO2 films with the increase of rate, such as the increase of refractive index and extinction coefficient and the decrease of physical thickness, lead to the spectrum shift and reflectivity bandwidth broadening of HR together with the increase of absorption and decrease of laser-induced damage threshold. The damages are found of different morphologies: a shallow pit to a seriously delaminated and deep crater, and the different amorphous-to-anatase-to-rutile phase transition processes detected by Raman study. The frequency shift of Raman vibration mode correlates with the strain in. film. Energy dispersive X-ray analysis reveals that impurities and non-stoichiometric defects are two absorption initiations resulting to the laser-induced transformation. (C) 2008 Elsevier B. V. All rights reserved.

Design, fabrication, and characterization of an ultracompact low-loss photonic crystal corner mirror

An ultracompact, low-loss, and broad-band corner mirror, based on photonic crystals, is investigated in this paper. Based on the theoretical analysis of the loss mechanism, the boundary layers of the photonic crystal region are revised to improve the extra losses, and the transmission characteristics are evaluated by using the 3-D finite-difference time-domain method. The device with optimized structure was fabricated on silicon-on-insulator substrate by using electron-beam lithography and inductively coupled plasma etching. The measured extra losses are about 1.1 +/- 0.4 dB per corner mirror for transverse-electronic polarization for the scanning wavelength range of 1510-1630 nm. Dimensions of the achieved PC corner mirror are less than ;7 x 7 mu m(2), which are only about one tenth of conventional wave-guide corner mirrors.

Realization of an ultracompact low-loss photonic crystal corner mirror

We report on the realization and characterization of an ultracompact, low-loss, and broadband corner mirror based on photonic crystals (PCs). By modifying the boundary layers of the PC region, extra losses of 1.1 +/- 0.4 dB per corner mirror are achieved for transverse-electronic polarization for silicon-on-insulator ridge waveguides fabricated by electron beam lithography and inductively coupled plasma etching. Dimensions of the PC corner mirror are less than 7 x 7 mu m(2), which are only about one tenth of conventional waveguide corner mirrors.

Electronic states in InAs quantum spheres and ellipsoids

The eight-band effective-mass Hamiltonian of the free-standing narrow-gap InAs quantum ellipsoids is developed, and the electron and hole electronic structures as well as optical properties are calculated by using the model. The energies, wave functions and transition probabilities of quantum spheres as functions of the radius of quantum sphere R is presented. It is found that the energy levels do not vary as 1/R-2, which is caused by the coupling between the conduction and valence bands, and by the constant terms correspond to the spin-orbit splitting energy. The blueshifts of hole states depend strongly on the coupling from electron states, so that the order of hole states changes as has been predicted in experiment. The exciton binding energies are calculated, the calculated excitonic gaps as functions of the ground exciton transition energy are in good agreement with the photoluminescence measured spectra in details. Finally, the hole energy levels and the linear polarization factors in InAs quantum ellipsoids as functions of the aspect ratio are presented. The state 1S(Z up arrow)((1/2)) becomes the hole ground state when e is larger than 2.4. The saturation value of the linear polarization factors of the InAs long ellipsoids of diameter 2.0 nm is 0.86, in agreement with the experimental results.

Quantum waveguide theory for hole transport in mesoscopic structures

A quantum waveguide theory is proposed for hole transport in the mesoscopic structures, including the band mixing effect. We found that due to the interference between the 'light' hole and 'heavy' wave, the transmission and reflection coefficients oscillate more irregularly as a function of incident wave vector geometry parameters. Furthermore conversion between the heavy hole and light hole states occurs at the intersection. (C) 2003 Elsevier Ltd. All rights reserved.

Structural identification of a cubic phase in hexagonal GaN films grown on sapphire by gas-source molecular beam epitaxy

The structural characteristics of gallium nitride (GaN) films grown on sapphire(0001) substrates by gas source molecular beam epitaxy (GSMBE) have been investigated using high-resolution synchrotron irradiation X-ray diffraction and cathodoluminescence with a variable energy electron beam. Besides the well-known GaN hexagonal structure, a small portion of cubic phase GaN was observed. The X-ray measurements provide an essential means for the structural identification of the GaN layers. Arising from the variable penetration depth of the electron beam in the cathodoluminescence measurements, it was found that the fraction of the GaN cubic-phase typically increased as the probing depth was increased. The results suggest that the GaN cubic phase is mostly located near the interface between the substrate and GaN layer due to the initial nucleation.

Effective-mass theory for InAs/GaAs strained superlattices

By using the recently developed exact effective-mass envelope-function theory, the electronic structures of InAs/GaAs strained superlattices grown on GaAs (100) oriented substrates are studied. The electron and hole subband structures, distribution of electrons and holes along the growth direction, optical transition matrix elements, exciton states, and absorption spectra are calculated. In our calculations, the effects due to the different effective masses of electrons and holes in different materials and the strain are included. Our theoretical results are in agreement with the available experimental data.

Fabrication of silicon-on-reflector for Si-based resonant-cavity-enhanced photodetectors

A novel silicon-on-reflector substrate for Si-based resonant-cavity-enhanced photodetectors has been fabricated by using Si-based sol-gel and smart-cut techniques. The Si/SiO2 Bragg reflector is controlled in situ by electron beam evaporation and the thickness can be adjusted to get high reflectivity. The reflectance spectra of the silicon-on-reflector substrate with five pairs of Si/SiO2 reflector have been measured and simulated by transfer matrix model. The reflectivity at operating wavelength is close to 100%. Based on the silicon-on-reflector substrate, SiGe/Si multiple quantum wells resonant-cavity-enhanced photodetectors for 1.3 mu m wavelength have been designed and simulated. Ten-fold enhancement of the quantum efficiency of resonant-cavity-enhanced photodetectors compared with conventional photodetectors is predicted.

Experimental Study on the Subthreshold Swing of Silicon Nanowire Transistors

SOI based wrap-gate silicon nanowire FETs are fabricated through electron beam lithography and wet etching. Dry thermal oxidation is used to further reduce the patterned fins cross section and transfer them into nanowires. Silicon nanowire FETs with different nanowire widths varying from 60 nm to 200 nm are fabricated and the number of the nanowires contained in a channel is also varied. The on-current (I-ON) and off-current (I-OFF) of the fabricated silicon nanowire FET are 0.59 mu A and 0.19 nA respectively. The subthreshold swing (SS) and the drain induced barrier lowering are 580 mV/dec and 149 mVN respectively due to the 30 nm thick gate oxide and 1015 cm(-3) lightly doped silicon nanowire channel. The nanowire width dependence of SS is shown and attributed to the fact that the side-gate parts of a wrap gate play a more effectual role as the nanowires in a channel get narrower. It seems the nanowire number in a channel has no effect on SS because the side-gate parts fill in the space between two adjacent nanowires.

Commissioning of electron cooling in CSRm

A new generation electron cooler has started operation in the heavy ion synchrotron CSRm which is used to increase the intensity of heavy ions. Transverse cooling of the ion beam after horizontal multi-turn injection allows beam accumulation at the injection energy. After optimization of the accumulation process an intensity increase in a synchrotron pulse by more than one order of magnitude has been achieved. In given accumulation time interval of 10 seconds, 108particles have been accumulated and accelerated to the final energy. The momentum spread after accumulation and acceleration in the 10−4 range has been demonstrated in six species of ion beams. Primary measurements of accumulation process varying with electron energy,electron beam current, electron beam profile, expansion factor and injection interval have been performed.The lifetimes of ion beams in the presence of electron beams were roughly measured with the help of DCCT signal.

Pre-irradiation with low-dose C-12(6+) beam significantly enhances the efficacy of AdCMV-p53 gene therapy in human non-small lung cancer

The combination of ionizing radiation and gene therapy has been investigated. However, there are very few reports about the combination of heavy-ion irradiation and gene therapy. To determine if the pre-exposure to low-dose heavy ion beam enhances the suppression of AdCMV-p53 on non-small lung cancer (NSLC), the cells pre-irradiated or non-irradiated were infected with 20, 40 MOI of AdCMV-p53. Survival fraction and the relative biology effect (RBE) were determined by clonogenic assay. The results showed that the proportions of p53 positive cells in C-12(6+) beam induced AdCMV-p53 infected cells were more than 90%, which were significantly more than those in gamma-ray induced AdCMV-p53 infected cells. The pre-exposure to low-dose 12C6+ beam significantly prevented the G(0)/G(1) arrest and activated G(2)/M checkpoints. The pre-exposure to C-12(6+) beam significantly improved cell to apoptosis. RBEs for the C-12(6+)+ AdCMV-p53 infection groups were 30%-60%,20% -130% and 30%-70% more than those for the C-12(6+)_irradiated only, AdCMV-p53 infected only, and gamma-irradiation induced AdCMVp53 infected groups, respectively. The data suggested that the pre-exposure to low-dose C-12(6+) beam significantly promotes exogenous p53 expression in NSLC, and the suppression of AdCMV-p53 gene therapy on NSLC.

COD by magnetic field in electron-cooling section and correction at CSR

Application of electron-cooling upgrades the quality of ion beams in the storage rings and brings new problems. The transverse magnetic field distorts the ion orbit while guiding the intense electron beam. The closed-orbit distortion should be and can be localized and controlled well inside the ring acceptance. This paper deals with the field in the e-cool section and concomitant COD of ion orbit and shows the correction scheme.

Commissioning of electron cooling in CSRe

The 400 MeV/u C-12(6+) ion beam was successfully cooled by the intensive electron beam near 1 A in CSRe. The momentum cooling time was estimated near 15 s. The cooling force was measured in the cases of different electron beam profiles, and the different angles between the ion beam and electron beam. The lifetime of the ion beam in CSRe was over 80 h. The dispersion in the cooling section was confirmed as positive close to zero. The beam sizes before cooling and after cooling were measured by the moving screen. The beam diameter after cooling was about 1 mm. The bunch length was measured with the help of the signals from the beam position monitor. The diffusion was studied in the absence of the electron beam.