湖南尖吻蝮(D. acutus)蛇毒出血毒素的纯化、性质和溶液构象研究

通过Sephadex G-75凝胶过滤，QAE-Sephadex A-50和CM_Sephadex C-25离子交换的步骤，我们从湖南产尖吻蝮(Dienagkistrodon acutus)蛇毒中纯化出两个出血毒素，分别称之为DaHT-1和DaHT-2。在聚丙烯酰胺凝胶电泳(PAGE)和SDS-聚丙烯酰胺凝胶电泳中均呈单一蛋白带，显示两个出血毒素皆为电泳纯。DaHT-1和DaHT-2的分子量相同，都为23,500道尔顿，具有相似的氨基酸组成，其中酸性氨基酸(Asx和GLx)分别占23%和24%。经等电聚焦(IEF)测得它们的等电点分别为5.6和5.2。两个出血毒素具有较强的出血活性(MHD分别为0.5和0.8μg)，都具蛋白水解酶活力，无精氨酸水解酶和PLA~2活性，但蛋白水解酶活性与出血活性并非正相关。DaHT-1，DaHT-2的最适温度分别为35 ℃，40 ℃；最适pH为6-9。对热不稳定，温度变高于60 ℃，活性完全丧失。在中性和碱性条件下稳定，在酸性条件下不稳定，pH<3，出血活性丧失。EDTA完全抑制，半胱氨酸部分抑制它们的出血活性，表明两个出血毒素都是依赖金属离子的蛋白酶，且二硫键对其活性是必需的。金属离子的分析表明每摩尔毒蛋白大约含0.5摩尔的Zn，1摩尔的Ca，较多的Na，K。Mg，不含Co。两者是糖蛋白，含糖总量分别为11%和7%。用远紫外CD谱探讨DaHT-1和DaHT-2的溶液构象所得DaHT-1的α-螺旋，β-折叠和无规卷曲分别为36.9%，27.6%和31.4%；DaHT-2的α-螺旋，β-折迭和无规卷曲分别为23.4%，37.3%和45.3%。随着pH的增大或减少，DaHT-1和DaHT-2的峰位蓝移，在酸性条件下的变化比在碱性条件下大，计算表明：α-螺旋减少，无规卷曲增多，β-折迭基本未变。温度的影响和pH相似，50 ℃时峰位蓝移，α-螺旋减少，无规卷曲增多。EDTA对其影响很大，0.02M EDTA便导致两个出血毒素呈极度的无序状态。

ELECTRON-STATES OF A STACKING-FAULT RIBBON IN SILICON

The electronic structure of a bounded intrinsic stacking fault in silicon is calculated. The method used is an LCAO-scheme (Linear Combinations of Atomic Orbitals) taking ten atomic orbitals of s-, p-, and d-type into account. The levels in the band gap are extracted using Lanczos' algorithm and a continued fraction representation of the local density of states. We find occupied states located up to 0.3 eV above the valence band maximum (E(v)). This significantly differs from the result obtained for the ideal infinite fault for which the interface state is located at E(v)+ 0.1 eV.

INFLUENCE OF THE 90-DEGREES PARTIAL DISLOCATION CORE STRUCTURE IN SILICON ON ENERGY-LEVELS

An LCAO-scheme taking into account 10 atomic orbitals (s-, p-, and d-type) is used to calculate the electronic structure of the reconstructed 90-degrees partial dislocation in Si. Two different valence force fields producing deviating results are used for modelling the core structure. Geometrical data published by another group is also used. The aim is to explore the influence of geometry on energy levels. We find that the band structure depends sensitively on bond angles. Using data determined by the Tersoff potential we obtain two bands of which the upper one penetrates deeply into the indirect band gap while the geometry minimizing the simple Keating potential leaves the gap completely clear of dislocation states. Thus, from a theoretical point of view, the chief difficulty in calculating the electronic structure of the reconstructed 90-degrees partial is the lack of accurate structural information.

ENERGY-LEVEL CALCULATIONS OF THE RECONSTRUCTED 90-DEGREES PARTIAL DISLOCATION IN SILICON

An LCAO scheme taking into account 10 atomic orbitals (s-, p-, and d-type) applied to a supercell containing 256 atoms is used to calculate the bound states of the reconstructed 90-degrees partial dislocation in Si. The results differ significantly from our earlier calculations on the unreconstructed 90-degrees partial using the same method. We find two bands separate from each other in the entire Brillouin zone and the upper band penetrates deep into the indirect band gap which is in contradiction with the general opinion that core reconstruction clears the band gap of dislocation states.

CALCULATED ELECTRONIC AND MAGNETIC-STRUCTURES OF THE NEW TERNARY RARE-EARTH IRON NITRIDE ND2FE17N3

The electronic and magnetic structures of Nd2Fe17 and Nd2Fe17N3 have been calculated using the first-principle, spin-polarized orthogonalized linear combination of atomic orbitals method. Comparative studies of the two materials reveal important effects of the nitrogen atoms (at 9e site) on the electronic and magnetic structures. Results are presented for the total density of states, site-projected partial density of states and the spin magnetic moments on four nonequivalent Fe sites. The highest magnetic moments are found to be located on the 6c site for Nd2Fe17 and on the 9d site for Nd2Fe17N3, in agreement with the neutron and Mossbauer experiments. The variation trends of the magnetic moments on different Fe sites are discussed in terms of the separation between Fe and N atoms. Compared with Nd2Fe17, an increase in the exchange splitting of the Fe d band is found in Nd2Fe17N3, which accounts for its higher Curie temperature as observed in experiments. The calculated results show that the nitrogen atoms are charge acceptors in these compounds.

ELECTRON-STATES OF A VACANCY IN THE CORE OF THE 90-DEGREES PARTIAL DISLOCATION IN SILICON

An LCAO scheme (linear combination of atomic orbitals) taking into account ten atomic orbitals (s-, p-, and d-type) is used to calculate the electronic structure of a vacancy present in the core of the reconstructed 90 degrees partial dislocation in silicon. The levels in the band gap are extracted using Lanczos' algorithm and a continued fraction representation of the local density of states. The three-fold degenerate stale of the ideal vacancy is split into three levels with energies 0.26, 1.1, and 1.9 eV measured from the valence band edge.

Growth of SiGe by D-UHV/CVD at Low Temperature

The temperature is a key factor for the quality of the SiGe alloy grown by D-UHV/CVD. In conventional conditions,the lowest temperature for SiGe growth is about 550℃. Generally, the pressure of the growth chamber is about 10~(-5) Pa when liquid nitrogen is introduced into the wall of the growth chamber with the flux of 6sccm of the disilane gas. We have succeeded in depositing SiGe films at much lower temperature using a novel method. It is about 10.2 Pa without liquid nitrogen, about 3 magnitudes higher than the traditional method,leading to much faster deposition rate. Without liquid nitrogen,the SiGe film and SiGe/Si superlattice are grown at 485℃. The DCXRD curves and TEM image show that the quality of the film is good. The experiments show that this method is efficient to deposit SiGe at low temperature.

A 12bit 300MHz Current-Steering CMOS D/A Converter

The proposed DAC consists of a unit current-cell matrix for 8MSBs and a binary-weighted array for 4LSBs, trading-off between the precision, speed, and size of the chip. In order to ensure the linearity of the DAC, a double Centro symmetric current matrix is designed by the Q2 random walk strategy. To achieve better dynamic performance, a latch is added in front of the current switch to change the input signal, such as its optimal cross-point and voltage level. For a 12bit resolution,the converter reaches an update rate of 300MHz.

一个10位、50MS/s CMOS折叠流水结构A/D转换器

在0.6μm DPDM标准数字CMOS工艺条件下,实现10位折叠流水结构A/D转换器,使用动态匹配技术,消除折叠预放电路的失调效应;提出基于单向隔离模拟开关的分步预处理,有效压缩了电路规模,降低了系统功耗.在5V电源电压下,仿真结果为:当采样频率为50MSPS时,功耗为120mW,输入模拟信号和二进制输出码之间延迟为2.5个时钟周期,芯片面积1.44mm2.

一种用于高速A/D转换器的高精度参考电压电阻网络

于2010-11-23批量导入

D类数字功率放大器电路失真分析及其负反馈方案讨论

于2010-11-23批量导入

D-木糖异构酶基因亚克隆及其序列分析

我们大肠杆菌K12的D-木糖操纵子中克隆了D-木糖异构酶基因，并以Bal31缩短DNA方法，获得了彼此相差约200bp的亚克隆。而后，用质粒系统直接测定了这些亚克隆片段的基因序列，并进一步得出含有D-木糖异构酶基因的1620bp全序列。序列结果表明，其结构基因长为1320bp，编码着由440个氨基酸组成的蛋白，与Lawlis和Schellerberg发表的D-木糖异构酶基因序列相比，同源性达99.8%。