Si underlayer induced nano-ablation in AgInSbTe thin films

AgInSbTelSi thin films on glass substrates are prepared by dc magnetron sputtering at room temperature. Using Si underlayer as the thermal diffusion layer, the super-resolution nano-ablation holes with a size of 70nm in the AgInSbTe phase change films are obtained by a far-field focused laser experimental setup, with laser wavelength 405nm and objective-lens numerical aperture 0.90. The nano-ablation formation mechanism is analysed and discussed via the thermal diffusion of sample structures.

Preparation of crystalline beta barium borate thin films on Sr2+-doped alpha barium borate substrates by liquid phase epitaxy

Thin films of beta barium borate have been prepared by liquid phase epitaxy on Si2+-doped alpha-BaB2O4 (alpha-BBO, the high temperature phase of barium berate) (001) and (110) substrates. The results of X-ray diffraction indicate that the films show highly (001) preferred orientation on (001)-oriented substrates while the films grown on (110) substrates are textured with (140) orientation. The crystallinity of these films was found to depend on growth temperature, rotation rate, dip time and orientation of substrate. Growth conditions were optimized to grow films with (001) orientation on (001) substrates reproducibly. The films show second harmonic generation of 400 nm light upon irradiation with 800 nm Ti: Sapphire femtosecond laser light. (c) 2005 Elsevier B.V. All rights reserved.

Si（111）衬底上ZnO薄膜的磁控溅射法制备及表征

采用磁控溅射法在(111)单晶硅衬底上沉积了ZnO薄膜，并研究了退火温度对ZnO薄膜晶体质量、晶粒度大小、应力和光致发光谱的影响。X射线衍射(XRD)表明薄膜为高度c轴择优取向。不同退火温度下的ZnO薄膜应力有明显变化。应力分布最为均匀的退火温度为500℃。室温下对ZnO薄膜进行了光谱分析，可观测到明显的紫光发射(波长为380nm左右)。实验结果表明，用磁控溅射法在单晶硅衬底上能获得高质量的ZnO薄膜。

退火对Si（111）衬底上ZnO薄膜的结构和发光特性的影响

采用磁控溅射法在硅（111）衬底上制备了C轴高度取向的ZnO薄膜，并研究了退火温度和氧气气氛对ZnO薄膜晶体质量、晶粒度大小和光致发光谱的影响。X射线衍射表明，所有薄膜均为高度C轴择优取向，当退火温度低于900℃时，随着退火温度的升高，薄膜的取向性和结晶度都明显提高。室温下对ZnO薄膜进行了光谱分析，退火后的样品均可观测到明显的紫光发射。在一定的退火温度范围内，还可以观测到明显的紫外双峰。空气中退火的样品，当退火温度达到或高于600℃还可观测到绿光发射。实验结果表明，发光峰强度随退火温度和氧气气氛不同而不

Intense upconversion and infrared emissions in Er3+;Yb3+ codoped Lu2 Si O5 and (Lu0.5 Gd0.5)2 Si O5 crystals

High optical quality Lu2SiO5 (LSO) and (Lu0.5Gd0.5)(2)SiO5 (LGSO) laser crystals codoped with Er3+ and Yb3+ have been fabricated by the Czochralski method. Intense upconversion (UC) and infrared emission (1543 nm) are observed under excitation of 975 nm. The luminescence processes are explained and the emission efficiencies are quantitatively obtained by measuring the UC efficiency and calculating the emission cross section. The temperature-dependent optical properties of the crystals are also investigated. Our study indicates that Er3+-Yb3+ : LSO and Er3+-Yb3+: LGSO crystals are promising gain media for developing the solid-state 1.5 mu m optical amplifiers and tunable UC lasers. (c) 2008 American Institute of Physics.

Mo原子溅射能量对Mo／Si薄膜微结构的影响

用磁控溅射法制备了Mo／Si薄膜，用AFM和XRD分别研究了Mo原子的溅射能量不同时，Mo／Si薄膜表面形貌和晶相的变化。通过比较发现，随着Mo原子溅射能量的增大，Mo／Si薄膜表面粗糙度增加，Mo和Si的特征X射线衍射峰也越来越强，并且Mo膜层和Si膜层之间生成了Mo-Si2。Mo原子的溅射能量是诱导非晶Si结晶和MoSi2生成的主要原因。

不同膜层数的Mo/Si多层膜的表界面粗糙度和软X射线反射率

用磁控溅射法制备了顶层分别是Mo膜层和Si膜层的两个系列的Mo/Si多层膜，它们的周期厚度相同但是膜层数各不相同。Mo/Si多层膜的周期厚度和界面粗糙度由小角X射线衍射（SAXRD）曲线拟和得到。用原子力显微镜测量了Mo/Si多层膜的表面粗糙度。在国家同步辐射实验室测量了Mo/Si多层膜的软X射线反射率。通过理论和试验研究，发现Mo/Si多层膜的软X射线反射率主要由周期数和界面粗糙度决定，表面粗糙度对Mo/Si多层膜的软X射线反射率影响较小。

研究扩散屏障层对Mo/Si多层膜软X射线反射率影响的模拟

在特定波长下,用四层结构模型模拟了Mo/Si多层膜的软X射线反射率.研究了扩散屏障层dMo-on-Si和dSi-on-Mo对Mo/Si多层膜软X射线反射率的影响.研究发现,扩散屏障层并不总是损害Mo/Si多层膜的光学性能,通过合理设计dMo-on-Si和dSi-on-Mo厚度,增加dMo-on-Si与dSi-on-Mo的比值,也能提高多层膜的软X射线反射率.

用不同的Mo靶溅射功率制备Mo／Si多层膜

用磁控溅射法制备了周期厚度和周期数均相同的Mo／Si多层膜，用原子力显微镜和小角X射线衍射分别研究了Mo靶溅射功率不相同时，Mo／Si多层膜表面形貌和晶相的变化。随后在国家同步辐射实验室测量了Mo／Si多层膜的软X射线反射率。研究发现，随着Mo靶溅射功率的增大，Mo／Si多层膜的表面粗糙度增加，Mo的特征X射线衍射峰也增强，Mo／Si多层膜的软X射线峰值反射率先增大后减小。