Hydrogen related defects in neutron-irradiated silicon grown in hydrogen ambient

Isochronal thermal-annealing behavior of NTD floating-zone silicon grown in hydrogen ambient (called NTD FZ(H) Si) is presented. The dependencies of resistivity and carrier mobility on annealing temperature are determined by room-temperature Hall electrical measurements. Using infrared absorption spectroscopy, hydrogen-related infrared absorption bands evolution for NTD FZ(H) Si were measured in detail. It is demonstrated that compared with NTD FZ(Ar) Si, NTD FZ(H) Si exhibits the striking features upon isochronal annealing in temperature range of 150 similar to 650 degreesC: there appears the formation of an excessive shallow donor at annealing temperature of 500 degreesC. It is shown that the annealing behavior is directly related to the reaction of hydrogen and irradiation-induced defects. The evolution of infrared absorption bands upon temperature reflects a series of complex reaction process: irradiation-induced defects decomposition, breaking of Si-H bonds, migration and aggregation of atomic hydrogen, and formation of the secondary defects. (C) 2002 Elsevier Science B.V. All rights reserved.

Characterization of defects and whole wafer uniformity of annealed undoped semi-insulating InP wafers

Semi-insulating (SI) InP wafers of 2 and 3 in. diameters have been prepared by annealing undoped LEC InP at 930 degreesC for 80 h under pure phosphorus ambient (PP) and iron phosphide ambient (IP). The electrical uniformity of annealed undoped SI wafers, along with a Fe-doped as-grown SI LEC InP wafer, has been characterized by whole wafer PL mapping and radial Hall measurements. Defects in these wafers have been detected by photo-induced current transient spectroscopy (PICTS). The results indicated that the uniformity of IP wafer is much better than that of PP wafer and as-grown Fe-doped Si InP wafer. There are fewer traps in undoped SI InP IP wafer than in as grown Fe-doped and undoped SI InP PP wafer, as evidenced by PICTS. The good uniformity of the IP wafer is related to the nonexistence of high concentration of thermally induced defects. The mechanism for this phenomenon is discussed based on the results. (C) 2002 Elsevier Science B.V. All rights reserved.

Observation of defects in GaN epilayers

GaN epilayers grown on sapphire substrates nitridated for various lengthy periods were investigated by light scattering tomography (LST) and Raman scattering. In the LST images of the plane-view epilayers, the light scattering defects distribute in [<11(2)over bar 0>] directions. The defect density is lower in epilayer grown on substrate nitridated for a longer period. The defects are believed to be straight threading edge dislocations on {<1(1)over bar 00>} planes. The Raman shift of E-2 mode is larger in the sample grown on substrate nitridated for a longer period. Our results show that the stress is higher in the sample with fewer dislocations.

Enhanced nucleation of Ag nanoparticles by vacancy-type defects in Ar-ions implanted spinel

Vacancy-type defects are introduced into magnesium aluminate spine] (MgAl2O4 (1 1 0)) by Ar-ions implantation, and then Ag-ions are implanted into the depth rich in vacancy-type defects. The ultraviolet-visible spectrometry (UV-VIS) and positron annihilation spectroscopy (PAS) are used to study the influence of vacancy-type defects on nucleation of Ag nanoparticles. After introduction of vacancy-type defects the pronounced increase of surface plasmon resonance (SPR) absorbance intensity indicates that defects enhance the nucleation of Ag nanoparticles. The PAS results reveal that vacancy-type defects provide pre-nucleating centers for Ag nanoparticles nucleation and growth. (C) 2010 Elsevier B.V. All rights reserved.

predicting upgrade project defects based on enhancement requirements: an empirical study

Chinese Acad Sci, ISCAS Lab Internet Software Technologies

Computer simulation of the damage evolution of fiber-reinforced polypropylene-matrix composites with matrix defects

The damage evolution of fiber-reinforced polypropylene-matrix composites with matrix defects was studied via a Monte Carlo technique combined with a finite element method. A finite element model was constructed to predict the effects of various matrix defect shapes on the stress distributions. The results indicated that a small matrix defect had almost no effect on fiber stress distributions other than interfacial shear stress distributions. Then, a finite element model with a statistical distribution of the fiber strength was constructed to investigate the influences of the spatial distribution and the volume fraction of matrix defects on composite failure. The results showed that it was accurate to use the shear-lag models and Green's function methods to predict the tensile strength of composites even though the axial stresses in the matrix were neglected.

RADIATION-INDUCED CRYSTAL DEFECTS IN PTFE

Changes induced in the crystal structure of PTFE by irradiation at different temperatures have been investigated. In the dose and temperature range examined, the density of PTFE was observed to increase continuously with increasing dose due to the radiation-induced increase in crystallinity, while after post-irradiation annealing at 380-degrees-C, the density was observed to increase for samples irradiated at 20-degrees-C, and to begin to decrease after a certain dose for samples irradiated at 150 and 200-degrees-C. On the basis of the observation of radiation-induced separation of the melting peak of PTFE and its stability relative to the change in the rate of heating, the observed decrease in density was explained as being due to the radiation-induced crosslinking and/or branching inhibiting the process of crystallization and existing in the crystalline region as defects.

Suppression of zebrafish VEGF gene by cytomegalovirus promoter-driven short hairpin constructs induces vascular development defects and down regulation NRP1 expression

The usage of RNA interference for gene knockdown in zebrafish through expression of the small interfering RNA mediators from DNA vectors has created a lot of excitement in the research community. In this work, the ability of human cytomegalovirus immediate early promoter (CMV promoter)-driven short hairpin RNA (shRNA) expression vector to induce shRNA against vascular endothelial growth factor (VEGF) gene in zebrafish was tested, and its effects on VEGF-mediated vasculogenesis and angiogenesis were evaluated. Altogether four vectors targeting various locations of VEGF gene were constructed, and pSI-V4 was proven to be the most effective one. Microinjection of pSI-V4 into the zebrafish embryos resulted in defective vascular formation and down regulation of VEGF expression. In situ hybridization analysis indicated that silencing VEGF gene expression by pSI-V4 resulted in down regulation of neuropilin-1 (NRP1), a potent VEGF receptor. Knockdown of VEGF expression by morpholino gave the same result. This provided evidence that the VEGF-mediated angiogenesis in zebrafish was in part dependent on NRP1 expression. The results contributed to a better understanding of molecular mechanisms of cardiovascular development and provided a potential promoter for making inducible knockdown in zebrafish.