GaNAs/GaAs中的激子局域化和发光特性

通过多种光谱手段研究了GaNAs量子阱和体材料中的局域态和非局域态的不同光学特性.在超短激光脉冲激发下,第一次在GaNAs/GaAs量子阱发光光谱中,观察到非局域激子发光.选择激发光谱表明,局域中心主要聚集在GaNAs、GaAs异质结界面.在低N含量的GaNAs体材料发光光谱中,除了与N相关的局域态发光外,也发现发光特性完全不同的GaNAs合金态发光.这些结果为理解Ⅲ-V-N族半导体的异常能带特性具有十分重要的意义.

半绝缘InP的优化生长条件以及掩埋的1.55μm激光器

于2010-11-23批量导入

半导体材料与器体生产工艺尾气中砷、磷、硫的治理及检测

研究了化合物半导体材料、器件生产工艺中排出的有毒物质砷、磷、硫及其化合物的治理方法。还研究了这些有毒物质的低温富集取样及快速、灵敏的分析监测方法,并与其它经典的方法作了对比。

高灵敏度低暗电流GaAs量子阱红外探测器

报道所研制的高灵敏度、低暗电流的 GaAs量子阱长波长红外探测器的制备和性能。探测器具有50个GaAs量子阱和Al_(0.28)Ga_(0.72)As势垒,器件制成直径为320μm的台面型式单管。探测器的主要性能──响应率和探测率与偏置电流和工作温度关系很大。 通过材料结构的精心设计和器件工艺的改进使探测器的性能进一步提高: 探测峰值波长为9.2μm,工作温度为77K时,峰值电压响应率为9.7×10~5V/W,峰值探测率超过1×10~(11)cm。((Hz)~(1/2))/W,暗电流小于0.1μA。

The diphasic nc-Si/a-Si : H thin film with improved medium-range order

A series of silicon film samples were prepared by plasma enhanced chemical vapor deposition (PECVD) near the threshold from amorphous to nanocrystalline state by adjusting the plasma parameters and properly increasing the reactions between the hydrogen plasma and the growing surface. The microstucture of the films was studied by micro-Raman and Fourier transform infrared (FTIR) spectroscopy. The influences of the hydrogen dilution ratio of silane (R-H = [H-2]/[SiH4]) and the substrate temperature (T-s) on the microstructural and photoelectronic properties of silicon films were investigated in detail. With the increase of RH from 10 to 100, a notable improvement in the medium-range order (MRO) of the films was observed, and then the phase transition from amorphous to nanocrystalline phase occurred, which lead to the formation of diatomic hydrogen complex, H-2* and their congeries. With the increase of T-s from 150 to 275 degreesC, both the short-range order and the medium range order of the silicon films are obviously improved. The photoconductivity spectra and the light induced changes of the films show that the diphasic nc-Si/a-Si:H films with fine medium-range order present a broader light spectral response range in the longer wavelength and a lower degradation upon illumination than conventional a-Si:H films. (C) 2004 Elsevier B.V. All rights reserved.

Influences of initial nitridation process on the optical and structural characterization of GaN layer grown on sapphire (0001) by metalorganic chemical vapor deposition

In this paper. we investigate the influences of the initial nitridation of sapphire substrates on the optical and structural characterizations in GaN films. Two GaN samples with and without 3 min nitridation process were investigated by photoluminescence (PL) spectroscopy in the temperature range of 12-300 K and double-crystal X-ray diffraction (XRD). In the 12 K PL spectra of the GaN sample without nitridation, four dominant peaks at 3.476, 3.409 3.362 and 3.308 eV were observed, which were assigned to donor bound exciton, excitons bound to stacking faults and extended structural defects. In the sample with nitridation, three peaks at 3.453, 3.365. and 3.308 eV were observed at 12 K, no peak related to stacking faults. XRD results at different reflections showed that there are more stacking faults in the samples without nitridation.

Defect states in cubic GaN epilayer grown on GaAs by metalorganic vapor phase epitaxy

Defect states in cubic GaN epilayers grown on GaAs were investigated with the photoluminescence technique. One shallow donor and two acceptors were identified to be involved in relevant optical transitions. The binding energies of the free excitons, the bound excitons. the donor and the acceptors were determined. These values are in good agreement with recent theoretical results.

长白山阔叶红松林CO2收支特征

植被-大气间CO2交换研究对准确评价陆地生态系统碳收支有重要意义。本研究以我国北方典型的植被类型—长白山阔叶红松林为研究对象，以国际公认的涡度相关技术为主要手段，结合微气象观测和生物学实验，探讨了森林碳交换过程与机制，建立了CO2通量观测数据的质量评价与控制体系。主要结论： （1）长白山阔叶红松林湍流通量贡献区主要集中在0.01~2Hz频率范围内，在弱湍流条件下存在通量低估现象。经过质量控制，CO2通量数据能够反映阔叶红松林与大气间CO2交换的真实过程； （2）森林生态系统CO2通量变化范围为-1.5~1.0 mg CO2•m-2•s-1，白天主要受光合有效辐射PAR的影响，但高的空气饱和水汽压差VPD对植被光合有一定的抑制作用，夜间CO2通量主要受温度的控制； （3）5cm温度是控制土壤碳排放的主导因素，由于雨热同季，因此干旱胁迫现象并不明显。土壤呼吸Q10变化范围为3.88~4.67，其值大小与温度区间有关； （4）2003~2005年森林GPP分别为1441、1312和1502gC•m-2，NEE分别为-188、-157和-186gC•m-2，森林碳收支的年际差异是由水热条件引起。叶片和群落高的弱光利用率和较强的光合吸收能力是其作为有200多年林龄的温带原始林，仍保持较高固碳能力的重要原因之一； （5）2003~2005年生态系统碳排放量分别为1252、1155和1326gC•m-2，土壤呼吸约占生态系统呼吸排放的80%； （6）长白山阔叶红松林具有较高的碳代谢能力，但由于光合吸收和呼吸释放都很活跃，森林总体表现为一稳定、适度的碳汇。这与其温带成熟原始林在碳循环领域的生态功能相一致。