Quantum waveguide theory for hole transport in mesoscopic structures

A quantum waveguide theory is proposed for hole transport in the mesoscopic structures, including the band mixing effect. We found that due to the interference between the 'light' hole and 'heavy' wave, the transmission and reflection coefficients oscillate more irregularly as a function of incident wave vector geometry parameters. Furthermore conversion between the heavy hole and light hole states occurs at the intersection. (C) 2003 Elsevier Ltd. All rights reserved.

Structural characteristic of cubic GaN nucleation layers on GaAs(001) substrates by MOCVD

The structural characteristic of cubic GaN (C-GaN) nucleation layers on GaAs(0 0 1) substrates by metalorganic chemical vapor deposition was in detail investigated first by X-ray diffraction (XRD) measurements, using a Huber five-circle diffractometer and an intense synchrotron X-ray source. The XRD results indicate that the C-GaN nucleation layers are highly crystallized. Phi scans and pole figures of the (1 1 1) reflections give a convincing proof that the GaN nucleation layers show exactly cubic symmetrical structure. The GaN(1 1 1) reflections at 54.74degrees in chi are a measurable component, however (002) components parallel to the substrate surface are not detected. Possible explanations are suggested. The pole figures of {1 0 (1) over bar 0} reflections from H-GaN inclusions show that the parasitic H-GaN originates from the C-GaN nucleation layers. The coherence lengths along the close-packed [1 1 1] directions estimated from the (1 1 1) peaks are nanometer order of magnitude. (C) 2002 Elsevier Science B.V. All rights reserved.

Correlated structural and optical investigation of terbium-doped zinc oxide nanocrystals

Tb3+-doped zinc oxide nanocrystals with a hexagonal wurzite structure were successfully prepared by reaction between Zn-O-Tb precursors and LiOH in ethanol. Good incorporation of Tb3+ in ZnO nanocrystals is proved by XRD, FTIR, PL and PLE measurements. The presence of acetate complexes to zinc atoms on particle surfaces is disclosed by FTIR results. Emission from both Tb3+ ions and surface states in ZnO matrix, as well as their correlation were observed. The luminescence mechanism is discussed. (C) 2000 Elsevier Science B.V. All rights reserved.

Optical and electrical investigation of low dimensional self-assembled InAs quantum dot field effect transistors

Self-assembled InAs QD dot-in-a-well (DWELL) structures were grown on GaAs substrate by MBE system, and heterojunction modulation-doped field effect transistor (MODFET) was fabricated. The optical properties of the samples show that the photoluminescence of InAs/GaAs self-assembled quantum dot (SAQD) is at 1.265 mu m at 300 K. The temperature-dependence of the abnormal redshift of InAs SAQD wavelength with the increasing temperature was observed, which is closely related with the inhomogeneous size distribution of the InAs quantum dot. According to the electrical measurement, high electric field current-voltage characteristic of the MODFET device were obtained. The embedded InAs QD of the samples can be regard as scattering centers to the vicinity of the channel electrons. The transport property of the electrons in GaAs channel will be modulated by the QD due to the Coulomb interaction. It has been proposed that a MODFET embedded with InAs QDs presents a novel type of field effect photon detector.

Lateral intersubband photocurrent study on InAs/InAlas/InP self-assembled nanostructures

We present lateral intersubband photocurrent (PC) study on self-assembled InAs/InAIAs/InP(001) nanostructures in normal incidence. With the help of interband excitation, a broad PC signal has been observed in the photon energy range of 150-630 meV arising from the bound-to-continuum intersubband absorption in the InAs nanostructures. The large linewidth of the intersubband PC signal is due to the size inhomogeneity of the nanostructures. With the increase of the interband excitation the intersubband PC signal firstly increases with a redshift of PC peak and reaches its maximum, then decreases with no peak shift. The increase and redshift of the PC signal at low excitation level can be explained by the state filling effect. However, the decrease of PC signal at high excitation level may be due to the change of the mobility and lifetime of the electrons. The intersubband PC signal decreases when the temperature is increased, which can be explained by the decrease of the mobility and lifetime of the electrons and the thermal escape of electrons.

Corrugated surfaces formed on GaAs (331)a substrates: The template for laterally ordered InGaAs nanowires

Morphology evolution of high-index (331)A surfaces during molecular beam epitaxy (MBE) growth have been investigated in order to uncover their unique physic properties and fabricate spatially ordered low dimensional nanostructures. Atomic Force Microscope (AFM) measurements have shown that the step height and terrace width of GaAs layers increase monotonically with increasing substrate temperature in conventional MBE. However, this situation is reversed in atomic hydrogen-assisted MBE, indicating that step bunching is partly suppressed. We attribute this to the reduced surface migration length of Ga adatoms with atomic hydrogen. By using the step arrays formed on GaAs (331)A surfaces as the templates, we fabricated laterally ordered InGaAs self-aligned nanowires.

Tuning of emission wavelength of InAs/GaAs quantum dots sandwiched by combination layers

We investigate about controlling of photoluminescence (PL) wavelengths of InAs/GaAs self-assembled quantum dots (QDs) sandwiched with combination strained-buffer layer (CSBL) and combination strained-reducing layer (CSRL). The emission peak position of QDs is red-shifted to 1.37 mu m. The density of the QDs is increased to 1.17x10(10) cm(-2). It is indicated that optical properties of QDs could be improved by optimizing of the buffer and covering layers for the QDs. These results may provide a new way to further developing GaAs-based 1.3 mu m light sources.

Surface morphology evolution of strained InAs/GaAs(331)a films

Surface morphology evolution of strained InAs/GaAs(331)A films was systematically investigated in this paper. Under As-rich conditions, InAs elongated islands aligned along [1 (1) over bar0] are formed at a substrate temperature of 510 degrees C. We explained it as a result of the anisotropic diffusion of adatoms. Under In-rich conditions, striking change has occurred with respect to the surface morphology of the InAs layers. Instead of anisotropic InAs elongated islands, unique island-pit pairs randomly distributed on the whole surface were observed. Using cooperative nucleation mechanisms proposed by Jesson et al. [Phys. Rev. Lett. 77, 1330 (1996)], we interpret the resulting surface morphology evolution.

Continuous-wave electrically injected InP/GaInAsP equilateral-triangle-resonator lasers

Equilateral-triangle-resonator (ETR) microlasers with an output waveguide connected to one of the vertices of the ETR are fabricated using standard photolithography and inductively-coupled-plasma etching techniques. Continuous-wave electrically injected 1550 nm ETR laser with side length ranged from 15 to 30 tm are realized at room temperature.

曙光5000A天体大规模数值模拟软件性能测试

在国产百万亿次超级计算机曙光5000A上进行了天体大规模数值模拟软件的性能和可扩展测试实验,详细介绍了软件中的测试程序以及测试环境和过程,并对测试结果进行了分析.对于80×80×50的网格规模,采用每节点4进程测试了16～128个处理器核,每节点8进程、16进程分别测试了16～512个处理器核,相对加速比最终分别达到5.33、10.48和12.57,并行效率分别达到66.66%、32.58%和32.29%.对于160×160×100的网格规模,测试了每节点16进程的64～8192个核的性能,最大相对加速比为12.46,并行效率为9.73%.测试结果表明,曙光5000A具有良好的性能,测试结果对软件下一步的优化研究具有重要的指导意义.

密码Hash函数相关问题研究

密码Hash函数是信息安全密码学的一个重要研究内容，是一类广泛应用的密码算法，用于把任意长度的字符串压缩成特定长度的字符串，同时需要在各种应用环境下满足一定的安全要求如抗碰撞，抗原象等。Hash函数广泛应用于数字签名、可证明安全、密码算法的构造以及重要的安全协议中。对Hash函数进行研究、分析Hash函数的安全性、构造安全高效的Hash算法有着重要意义。 本文研究了Hash函数的安全性质、设计结构以及常用分析方法，研究了Hash函数扩散层部件的设计，并且对MAME压缩函数算法进行了分析，取得了如下研究结果： (1) 研究了密码Hash函数的安全性质、设计结构、设计原理和常用分析方法，归纳总结了51个SHA-3候选算法的设计特点、设计原理和实现效率，研究了最新的分析进展，总结了新的攻击方法如REBOUND攻击等。NIST仿照AES的征集过程的SHA-3竞赛，目标是选出新的Hash函数标准SHA-3。进入第一轮的候选算法有51个，经过筛选选出其中的14个作为当前第二轮的候选算法。这些新Hash算法是由世界各国密码学家精心设计，是Hash函数领域最新设计思想的集体展示，当中涌现出很多新的设计结构和设计方法，同时激励密码学家发展新的分析方法。 (2) 设计并实现了了有限域上的扩散层构造算法以及扩散层分支数测试的算法，并针对多元域上的扩散层矩阵，本文使用编码理论，利用GRS码和柯西矩阵等设计了多元域扩散层矩阵的构造算法；使用有限域上的高斯消元法和线性码的性质设计了多元域扩散层矩阵的分支数的检测；设计了高效的二元域扩散层矩阵分支数测试算法。 (3) 针对MAME压缩函数算法进行差分分析，MAME算法是SHA-3候选算法Lesamnta的前身，于CHES 2007上提出的面向硬件有效实现的Hash算法。本文利用差分攻击对MAME算法进行分析，首先针对MAME的结构性质利用对通用Feistel结构的攻击方法构造了22轮差分攻击，碰撞攻击的复杂度为2^97，（第二）原象攻击的复杂度为2^197；对23轮的差分攻击需要的预计算是2^64张表，每张表的大小为2^64；对24轮的差分攻击需要的预计算是2^128张表，每张表的大小为2^64。针对24轮差分攻击很大的内存复杂度，我们利用了算法的细节特性，改进了差分攻击，新的差分不需要预计算的辅助内存，（第二）原象的复杂度为2^224。