Read-only memory disk with AgOx and AgInSbTe superresolution mask layer

Two novel read-only memory (ROM) disks, one with an AgOx mask layer and the other with an AgInSbTe mask layer, are proposed and studied. The AgOx and the AgInSbTe films sputtered on the premastered substrates with pit depths of 50 nm and pit lengths (space) of 380 nm are studied by atomic force microscopy. Disk readout measurement is carried out using a dynamic setup with a laser wavelength of 632.8 nm and an object lens numerical aperture (NA) of 0.40. Results show that the superresolution effect happens only at a suitable oxygen flow ratio for the AgOx ROM disk. The best superresolution readout effect is achieved at an oxygen flow ratio of 0.5 with the smoothest film surface. Compared with the AgOx ROM disk, the AgInSbTe ROM disk has a much smoother film surface and better superresolution effect. A carrier-to-noise ratio (CNR) of above 40 dB can be obtained at an appropriate readout power and readout velocity. The readout CNR of both the AgOx and AgInSbTe ROM disks have a nonlinear dependence on the readout power. The superresolution readout mechanisms for these ROM disks are analyzed and compared as well. (c) 2005 Society of Photo-Optical Instrumentation Engineers.

Low-Power Super-resolution Readout with Antimony Bismuth Alloy Film as Mask layer

Sb-Bi alloy films are proposed as a new kind of super-resolution mask layer with low readout threshold power. Using the Sb-Bi alloy film as a mask layer and SiN as a protective layer in a read-only memory disc, the super-resolution pits with diameters of 380 nm are read out by a dynamic setup, the laser wavelength is 780 nm and the numerical aperture of pickup lens is 0.45. The effects of the Sb-Bi thin film thickness, laser readout power and disc rotating velocity on the readout signal are investigated. The results show that the threshold laser power of super-resolution readout of the Sb-Bi mask layer is about 0.5 mW, and the corresponding carrier-to-noise ratio is about 20 dB at the film thickness of 50 nm. The super-resolution mechanism of the Sb-Bi alloy mask layer is discussed based on its temperature dependence of reflection.

Phase-locking of two large-core fibre lasers with 60W of coherent output power

A phase-locking fibre laser array with up to 60 W of coherent output power based on two large-core fibre is reported. The slope efficiency of the in-phase mode is 37%. For two cases of spacings between the cores, steady high-contrast interference stripes are observed. When the whole system operates under a high pump power level, no thermal effects for the spatial filter have been observed, which means that we can increase the coherent output power further by increasing the individual fibre laser power.

Tm-doped fibre laser pumped Cr2+: ZnSe poly-crystal laser

Demonstrations of cw lasing in Cr2+:ZnSe poly-crystal are reported. The laser consists of a 1.7-mm-thick Cr2+:ZnSe poly-crystal disc pumped by a Tm-silica double-clad fibre laser at 2050nm. Using a concave high-reflection mirror with a radius of curvature of 500mm as the rear mirror, the laser delivers up to 1030mW of radiation around 2.367 mu m.

Nano-polypyrrole supercapacitor arrays prepared by layer-by-layer assembling method in anodic aluminum oxide templates

A novel method for preparing nano-supercapacitor arrays, in which each nano-supercapacitor consisted of electropolymerized Polypyrrole (PPy) electrode / porous TiO2 separator / chemical polymerized PPy electrode, was developed in this paper. The nano-supercapacitors were fabricated in the nano array pores of anodic aluminum oxide template using the bottom-up, layer-by-layer synthetic method. The nano-supercapacitor diameter was 80 nm, and length 500 nm. Based on the charge/discharge behavior of nano-supercapacitor arrays, it was found that the PPy/TiO2/PPy array supercapacitor devices performed typical electrochemical supercapacitor behavior. The method introduced here may find application in manufacturing nano-sized electrochemical power storage devices in the future for their use in the area of microelectronic devices and microelectromechanical systems.

UV-blue upconverted emission from Nd3+-doped InF3-based heavy-metal fluoride glasses for blue upconversion fibre laser

We report spectral properties and thermal stability of Nd3+-doped InF3-based heavy-metal fluoride glasses. Fluoroindate glasses in the chemical compositions (in mol%) of (38-x)InF3-16BaF(2)-20ZnF(2)-20SrF(2)-3GdF(3)-1GaF(3-)2NaF-xNdF(3) (x = 0.1, 0.5, 1, 2, 3) have been prepared under a controlled atmosphere in a dry box. Strong UVblue upconversion emission from a green excitation wavelength has been observed and the involved mechanisms have been explained. Near-infrared emission occurs simultaneously upon excitation of the UV-blue upconversion emissions with a cw Ar(+)laser. The upconversion spectra have revealed four dominant emissions at 354, 380, 412 and 449 nm, which belong to the transitions of D-4(3/2) -> I-4(9/2), D-4(3/2) -> I-4(11/2) and P-2(3/2) -> I-4(9/2), D-4(3/2) -> I-4(13/2) and P-2(3/2) -> I-4(11/2), D-4(3/2) -> I-4(15/2) and P-2(3/2) -> I-4(13/2), respectively.

Structure and residual stress in gamma-LiAlO2, layer fabricated by vapor transport equilibration on (0001)sapphire

gamma-LiAlO2 layers with a highly preferred (1 0 0) orientation were prepared by vapor transport equilibration (VTE) technique on (0 0 0 1) sapphire substrate. Microststructure of the gamma-LiAlO2 layers was studied by XRD and SEM. In the temperature range from 750 to 1100 degrees C, the residual stress in the gamma-LiAlO2 layers varied from tensile to compressive with the increase of VTE temperature, and the critical point of the change between tensile and compressive stress is around 975 degrees C. (c) 2005 Elsevier B.V. All rights reserved.

A novel hollow-core holey fibre with random hole distributions in the cladding

We provide a novel hollow-core holey fibre that owns a random distribution of air holes in the cladding. Our experiments demonstrate that many of the features previously attributed to photonic crystal fibres with perfect arrangement of air holes, in particular, photonic bandgap guidance, can also be obtained in the fibre. Additionally, this fibre exhibits a second guided mode with both the two-lobe patterns, and each pattern is in different colour.

The growth of gamma-LiAlO2 layer with a highly-preferred orientation on (0001) sapphire

Using vapor transport equilibration (VTE) technique we succeeded in the fabrication of single-phase gamma-LiAlO2 layer on (0001) sapphire substrate. X-ray diffraction indicated that the as-fabricated layer was highly textured with [100] orientation at proper VTE treatment temperature range from 1050 degrees C to 1100 degrees C. The main factors affecting the quality of the gamma-LiAlO2 layer were investigated by SEM and transmission spectra. These results reveal the possibility of fabricating gamma-LiAlO2 (100)//sapphire (0001) composite substrate for GaN-based epitaxial film by VTE.

Effect of chromium intermediate layer on properties of silver coatings

Coatings with layer structures of Ag/glass, Ag/Cr/glass, and Ag/Cr-Ag/Cr/glass deposited with magnetron sputtering are investigated. The results indicate that the performance for reflectance, hardness, adherence, and humidity durability of the silver coatings with Ag/Cr/glass and Ag/Cr-Ag/Cr/glass structures are better than pure silver film. In addition, the silver coatings with an Ag/Cr-Ag/glass structure present more advantages than that of the Ag/Cr/glass. Reasons are analyzed accordingly. (C) 2004 Society of Photo-Optical Instrumentation Engineers.

Enhancement of near-band edge photoluminescence of ZnO thin films by employing MgF2 buffer layer

ZnO/MgF2/ZnO sandwich structure films were fabricated. The effects of a buffer layer on structure and optical properties of ZnO films were investigated by X-ray diffraction, photoluminescence, optical transmittance and absorption measurements. Measurement results showed that the buffer layer had the effects of improving the quality of ZnO films and releasing the residual stresses in the films. The near-band edge emissions of ZnO films deposited on the MgF2 buffer layer were significantly enhanced compared with those deposited on bare substrate due to the smaller lattice mismatch between MgF2 and ZnO than that between fused silica and ZnO. (c) 2006 Elsevier B.V. All rights reserved.