Structure and residual stress in gamma-LiAlO2, layer fabricated by vapor transport equilibration on (0001)sapphire


Autoria(s): 李抒智; Yang WQ; Wang YZ; 刘军芳; 周圣明; Xu J; Han P; Zhang R
Data(s)

2005

Resumo

gamma-LiAlO2 layers with a highly preferred (1 0 0) orientation were prepared by vapor transport equilibration (VTE) technique on (0 0 0 1) sapphire substrate. Microststructure of the gamma-LiAlO2 layers was studied by XRD and SEM. In the temperature range from 750 to 1100 degrees C, the residual stress in the gamma-LiAlO2 layers varied from tensile to compressive with the increase of VTE temperature, and the critical point of the change between tensile and compressive stress is around 975 degrees C. (c) 2005 Elsevier B.V. All rights reserved.

Identificador

http://ir.siom.ac.cn/handle/181231/5413

http://www.irgrid.ac.cn/handle/1471x/12178

Idioma(s)

英语

Fonte

李抒智;Yang WQ;Wang YZ;刘军芳;周圣明;Xu J;Han P;Zhang R.,J. Cryst. Growth,2005,282(1-2):186-189

Palavras-Chave #光学材料;晶体 #residual stress #sapphire substrate #vapor transport equilibration #gamma-LiAlO layer
Tipo

期刊论文