High-speed DFB laser and EMLs

High speed reliable 1.55 mum AlGaInAs multi-quantum well ridge waveguide (RW) DFB laser is developed with a 9GHz -3dB bandwidth. A high speed self aligned constricted mesa 1.55 mum DFB laser is achieved with a 9.1GHz -3dB bandwidth and a more than 20mW output power. A cost effective single RW electroabsorption modulated DFB laser (EMLs) is proposed and successfully fabricated by adopting selective area growth techniques:. a penalty free transmission at 2.5Gbps over 280Km normal G.652 single mode fiber is realized by using this EML as light source. For achieving a better performance EMLs. a gain-coupled DFB laser with etched quantum wells is successfully integrated with a electroabsorption modulator (EAM) for a high single mode yield. the wavelength of a EML is tuned in a 3.2nm range by a integrated thin-film heater for the wavelength routing. a buried heterostructure DFB laser is also successfully integrated with a RW EAM for a lower threshold current. lower EAM parasitic capacitance and higher output power.

Design, simulation and testing of large area silicon drift detectors and detector array for X-ray spectroscopy

Large area (25 mm(2)) silicon drift detectors and detector arrays (5x5) have been designed, simulated, and fabricated for X-ray spectroscopy. On the anode side, the hexagonal drift detector was designed with self-biasing spiral cathode rings (p(+)) of fixed resistance between rings and with a grounded guard anode to separate surface current from the anode current. Two designs have been used for the P-side: symmetric self-biasing spiral cathode rings (p(+)) and a uniform backside p(+) implant. Only 3 to 5 electrodes are needed to bias the detector plus an anode for signal collection. With graded electrical potential, a sub-nanoamper anode current, and a very small anode capacitance, an initial FWHM of 1.3 keV, without optimization of all parameters, has been obtained for 5.9 keV Fe-55 X-ray at RT using a uniform backside detector.

Electro-mass olfactory multi-sensor (EMMS)

For an olfactory sensor or electronic nose, the task is not only to detect the object concentration, but also to recognize it. It is well known that all the elements can be identified by their charge to mass ratio e(+)/m. We tried to imitate this principle for molecular recognition. Two kinds of sensors are used simultaneously in testing. One is quartz crystal microbalance (QCM) for detecting the change in mass, the other is interdigital electrode (IE) for detecting the change in conduction, as an electro-mass multi-sensor (EMMS). in this paper, the principle and the feasibility of this method are discussed. The preliminary results on the recognition of alcohol by EMMS coated with lipids are presented. Meanwhile, the multi-sensor can also be used as an instrument for research on some physico-chemistry problems. The change in conduction of coated membrane caused by one absorbed molecule is reported. It is found that when a QCM is coated with membrane, it still obeys the relationship Delta F (frequency change of QCM) = K Delta m (mass change of absorbed substance) and the proportional coefficient, K, depends not only on quartz properties but also on membrane characteristics as well. (C) 2000 Elsevier Science S.A. All rights reserved.

Influence of nitrogen implantation into the buried oxide on the radiation hardness of silicon-on-insulator wafers

摘要: In order to improve the total-dose radiation hardness of the buried oxide of separation by implanted oxygen silicon-on-insulator wafers, nitrogen ions were implanted into the buried oxide with a dose of 10(16)cm(-2), and subsequent annealing was performed at 1100 degrees C. The effect of annealing time on the radiation hardness of the nitrogen implanted wafers has been studied by the high frequency capacitance-voltage technique. The results suggest that the improvement of the radiation hardness of the wafers can be achieved through a shorter time annealing after nitrogen implantation. The nitrogen-implanted sample with the shortest annealing time 0.5 h shows the highest tolerance to total-dose radiation. In particular, for the 1.0 and 1.5 h annealing samples, both total dose responses were unusual. After 300-krad(Si) irradiation, both the shifts of capacitance-voltage curve reached a maximum, respectively, and then decreased with increasing total dose. In addition, the wafers were analysed by the Fourier transform infrared spectroscopy technique, and some useful results have been obtained.

Studying the Attribution of LiF in OLED by the C-V Characteristics

The organic light-emitting device (OLED) with simple structures of indium tin oxide (ITO)/tris(8-quinolinolato) aluminum (Alq(3))/LiF/Al and ITO/Alq(3)/Al was fabricated to analyze the contribution of LiF in OLED. We used the C-V characteristics to investigate the contribution of LiF in OLED and found that the capacitance of the above-mentioned structures was 12.5 nF and 77.5 nF, respectively. It is shown that the LiF layer affects the property of OLED resulting in the change of the capacitance of the device.

p-p isotype organic heterojunction and ambipolar field-effect transistors

We realized ambipolar transport behavior in field-effect transistors by using p-p isotype heterojunction films as active layers, which consisted of two p-type semiconductor materials, 2, 2'; 7', 2 ''-terphenanthrenyl (Ph3) and vanadyl-phthalocyanine (VOPc). The ambipolar charge transport was attributed to the interfacial electronic structure of Ph3-VOPc isotype heterojunction, and electrons and holes were accumulated at both sides of the narrow band-gap VOPc and the wide band-gap Ph3, respectively, which were confirmed by the capacitance-voltage relationship of metal-oxide-semiconductor diodes. The accumulation thickness of carriers was also obtained by changing the heterojunction active layer thickness. Furthermore, the results indicate that the device performance is relative to interfacial electronic structures.

One-step synthesis of graphene/SnO2 nanocomposites and its application in electrochemical supercapacitors

A one-step method was developed to fabricate conductive graphene/SnO2 (GS) nanocomposites in acidic solution. Graphite oxides were reduced by SnCl2 to graphene sheets in the presence of HCl and urea. The reducing process was accompanied by generation of SnO2 nanoparticles. The structure and composition of GS nanocomposites were confirmed by means of transmission electron microscopy, x-ray photoelectron and Raman spectroscopy. Moreover, the ultracapacitor characteristics of GS nanocomposites were studied by cyclic voltammograms (CVs) and electrical impedance spectroscopy (EIS). The CVs of GS nanocomposites are nearly rectangular in shape and the specific capacitance degrades slightly as the voltage scan rate is increased. The EIS of GS nanocomposites presents a phase angle close to p/2 at low frequency, indicating a good capacitive behavior.

Origin of improvement in device performance via the modification role of cesium hydroxide doped tris(8-hydroxyquinoline) aluminum interfacial layer on ITO cathode in inverted bottom-emission organic light-emitting diodes

It has been found that cesium hydroxide (CsOH) doped tris(8-hydroxyquinoline) aluminum (Alq(3)) as an interfacial modification layer on indium-tin-oxide (ITO) is an effective cathode structure in inverted bottom-emission organic light-emitting diodes (IBOLEDs). The efficiency and high temperature stability of IBOLEDs with CsOH:Alq(3) interfacial layer are greatly improved with respect to the IBOLEDs with the case of Cs2CO3:Alq(3). Herein, we have studied the origin of the improvement in efficiency and high temperature stability via the modification role of CsOH:Alq(3) interfacial layer on ITO cathode in IBOLEDs by various characterization methods, including atomic force microscopy (AFM), ultraviolet photoemission spectroscopy (UPS), X-ray photoemission spectroscopy (XPS) and capacitance versus voltage (C-V). The results clearly demonstrate that the CsOH:Alq(3) interfacial modification layer on ITO cathode not only enhances the stability of the cathode interface and electron-transporting layer above it. which are in favor of the improvement in device stability, but also reduces the electron injection barrier and increases the carrier density for current conduction, leading to higher efficiency.

Synthesis of Ruthenium Dioxide Nanoparticles by a Two-Phase Route and Their Electrochemical Properties

Dissolvable, size- and shape-controlled ruthenium dioxide nanoparticles are successfully achieved through a two-phase route. The influence of reaction time, temperature, and monomer concentration and the nature of capping agents on the morphologies of nanoparticles are studied through transmission electron microscopy (TEM). A possible mechanism for the formation and growth of nanoparticles is also involved. X-ray powder diffraction (XRD) confirms the amorphous structure for as-prepared ruthenium dioxide nanoparticles. Samples are immobilized by simple dip-coating on a current collector, and the cyclic voltammetry measurement is utilized to investigate their electrochemical properties. The specific capacitance of one sample can teach as high as 840 F g(-1), which reveals the promising application potential to electrochemical capacitors.

Electrical properties in vanadyl-phthalocyanine-based metal-insulator-semiconductor devices

We investigated electrical properties of vanadyl phthalocyanine (VOPc) metal-insulator-semiconductor (MIS) devices by the measurement of capacitance and conductance, which were fabricated on ordered para-sexiphenyl (p-6P) layer by weak epitaxy growth method. The VOPc/p-6P MIS diodes showed a negligible hysteresis effect at a gate voltage of +/- 20 V and small hysteresis effect at a gate voltage of +/- 40 V due to the low interface trap state density of about 1x10(10) eV(-1) cm(-2). Furthermore, a high transition frequency of about 10 kHz was also observed under their accumulation mode. The results indicated that VOPc was a promising material and was suitable to be applied in active matrix liquid crystal displays and organic logic circuits.

Co-assembly of ferrocene-terminated and alkylthiophene thiols on gold and its redox chemistry modulated by surfactant adsorption

Coadsorption of ferrocene-terminated alkanethiols (FcCO(2)(CH2)(8)SH, Fc=(mu(5)-C5H5)Fe(mu(5)-C5H4)) with alkylthiophene thiols (2-mercapto-3-n-octylthiophene) yields stable, electroactive self-assembled monolayers on gold. The resulting mixed monolayer provides an energetically favorable hydrophobic surface for the adsorption of the surfactant aggregates in aqueous solution. The adsorptions have been characterized via their effect on the redox properties of ferrocenyl alkanethiols immobilized as minority components in the monolayers and on the interfacial capacitance of the electrode. Surfactant adsorption causes a decrease in the overall capacitance at the electrode and dramatically shifts the redox potential for ferrocene oxidation in a positive or negative direction depending on the identity of the surfactant employed. A structural model is proposed in which the alkane chains of the adsorbed surfactants interdigitate with those of the underlying self-assembled monolayer, leading to the formation of a hybrid bilayer membrane.

Ambipolar organic field-effect transistors with air stability, high mobility, and balanced transport

Ambipolar organic field-effect transistors (OFETs) based on the organic heterojunction of copper-hexadecafluoro-phthalocyanine (F16CuPc) and 2,5-bis(4-biphenylyl) bithiophene (BP2T) were fabricated. The ambipolar OFETs eliminated the injection barrier for the electrons and holes though symmetrical Au source and drain electrodes were used, and exhibited air stability and balanced ambipolar transport behavior. High field-effect mobilities of 0.04 cm(2)/V s for the holes and 0.036 cm(2)/V s for the electrons were obtained. The capacitance-voltage characteristic of metal-oxide-semiconductor (MOS) diode confirmed that electrons and holes are transported at F16CuPc and BP2T layers, respectively. On this ground, complementary MOS-like inverters comprising two identical ambipolar OFETs were constructed.

Glassy carbon ceramic composite electrodes

A new carbon composite electrode material, based on dispersing glassy carbon (GC) microparticles into methyltrimethoxysilane-derived sol, is described in the present paper. The resulting glassy carbon ceramic composite electrodes (GCCEs) combine the electrochemical properties of GC with the advantages of composite electrodes, and thus offer high electrochemical reactivity, low background current and are easy to prepare, modify and renew. The new material has a low double-layer capacitance and a wide potential window. Scanning electron microscopy (SEM) images indicate significant difference in the structure of GCCE and carbon ceramic composite electrode (CCE). The electrochemical properties and advantages of GCCE should find broad utility in electroanalysis.

Preparation of cobalt hexacyanoferrate nanowires using carbon nanotubes as templates

A simple and convenient method for preparation of cobalt hexacyanoferrate (CoHCF) nanowires by electrodeposition was reported. Multiwall carbon nanotubes (MWNTs) were used as templates to fabricate CoHCF nanowires. MWNTs could affect the size of CoHCF nanoparticles and made them grow on the sidewalls of carbon nanotubes during the process of electrodeposition. Thus CoHCF nanowires could be obtained by this method. Field-emission scanning electron microscopy, UV-vis spectroscopy, Fourier transform infrared spectroscopy and X-ray photoelectron spectroscopy were used to characterize these nanowires. These results showed the CoHCF nanowires could be easily and successfully obtained and it gave a novel approach to prepare inorganic nanowires.