TUNNELING ESCAPE TIME OF ELECTRONS THROUGH DOUBLE-BARRIER RESONANT-TUNNELING STRUCTURES

Tunneling escape of electrons from quantum wells (QWs) has systematically been studied in an arbitrarily multilayered heterostructures, both theoretically and experimentally. A wave packet method is developed to calculate the bias dependence of tunneling escape time (TET) in a three-barrier, two-well structure. Moreover, by considering the time variation of the band-edge profile in the escape transient, arising from the decay of injected electrons in QWs, we demonstrate that the actual escape time of certain amount of charge from QWs, instead of single electron, could be much longer than that for a single electron, say, by two orders of magnitude at resonance. The broadening of resonance may also be expected from the same mechanism before invoking various inhomogeneous and homogeneous broadening. To perform a close comparison between theory and experiment, we have developed a new method to measure TET by monitoring transient current response (TCR), stemming from tunneling escape of electrons out of QWs in a similar heterostructure. The time resolution achieved by this new method reaches to several tens ns, nearly three orders of magnitude faster than that by previous transient-capacitance spectroscopy (TCS). The measured TET shows an U-shaped, nonmonotonic dependence on bias, unambiguously indicating resonant tunneling escape of electrons from an emitter well through the DBRTS in the down-stream direction. The minimum value of TET obtained at resonance is accordance with charging effect and its time variation of injected electrons. A close comparison with the theory has been made to imply that the dynamic build-up of electrons in DBRTS might play an important role for a greatly suppressed tunneling escape rate in the vicinity of resonance.

Effect of Surface Potential Barrier on the Electron Energy Distribution of NEA Photocathodes

By calculating the energy distribution of electrons reaching the photocathode surface and solving the Schrodinger equation that describes the behavior of an electron tunneling through the surface potential barrier,we obtain an equation to calculate the emitted electron energy distribution of transmission-mode NEA GaAs photocathodes. Accord- ing to the equation,we study the effect of cathode surface potential barrier on the electron energy distribution and find a significant effect of the barrier-Ⅰ thickness or end height,especially the thickness,on the quantum efficiency of the cath- ode. Barrier Ⅱ has an effect on the electron energy spread, and an increase in the vacuum level will lead to a narrower electron energy spread while sacrificing a certain amount of cathode quantum efficiency. The equation is also used to fit the measured electron energy distribution curve of the transmission-mode cathode and the parameters of the surface barri- er are obtained from the fitting. The theoretical curve is in good agreement with the experimental curve.

SiC Schottky结反向特性的研究

对Ti/6H-SiC Schottky结的反向特性进行了测试和理论分析,提出了一种综合的包括SiC Schottky结主要反向漏电流产生机理的反向隧穿电流模型,该模型考虑了Schottky势垒不均匀性、Ti/SiC界面层电压降和镜像力对SiC Schottky结反向特性的影响,模拟结果和测量值的相符说明了以上所考虑因素是引起SiC Schottky结反向漏电流高于常规计算值的主要原因.分析结果表明在一般工作条件下SiC Schottky结的反向特性主要是由场发射和热电子场发射电流决定的.

6H—SiC Schottky二极管的正向特性

提出了一种考虑Schottky结势垒不均匀性和界面层作用的SiC Schottky二极管(SBD)正向特性模型，势垒的不均匀性来自于SiC外延层上的各种缺陷，而界面层上的压降会使正向Schottky结的有效势垒增高．该模型能够对不同温度下SiC Schottky结正向特性很好地进行模拟，模拟结果和测量数据相符．它更适用于考虑器件温度变化的场合，从机理上说明了理想因子、有效势垒和温度的关系．

Low-frequency noise properties of GaN Schottky barriers deposited on intermediate temperature buffer layers

Metal-semiconductor-metal (MSM) structures were fabricated by RF-plasma-assisted MBE using different buffer layer structures. One type of buffer structure consists of an AlN high-temperature buffer layer (HTBL) and a GaN intermediate temperature buffer layer (ITBL), another buffer structure consists of just a single A IN HTBL. Systematic measurements in the flicker noise and deep level transient Fourier spectroscopy (DLTFS) measurements were used to characterize the defect properties in the films. Both the noise and DLTFS measurements indicate improved properties for devices fabricated with the use of ITBL and is attributed to the relaxation of residue strain in the epitaxial layer during growth process. (C) 2003 Elsevier Ltd. All rights reserved.

Asymmetric dark current in double barrier quantum well infrared photodetectors

Asymmetric dark current and photocurrent versus voltage characteristic in the Double Barrier Quantum Wells (DBQWs) photovoltaic infrared photodetector has been studied. A model based on asymmetric potential barriers was proposed. The asymmetric potential thick barrier, which due to the Si dopant segregation during growth makes a major contribution to the asymmetrical I-V characteristic, calculations based on our model agree well with experimental results. This work also confirms the potential use of this DBQWs for infrared photodetector with large responsivity and little dark current under negative bias.

Resonant tunneling of holes in GaMnAs-related double- barrier structures

Using the multiband quantum transmitting boundary method (MQTBM), hole resonant tunneling through AlGaAs/GaMnAs junctions is investigated theoretically. Because of band-edge splitting in the DMS layer, the current for holes with different spins are tuned in resonance at different biases. The bound levels of the "light" hole in the quantum well region turned out to be dominant in the tunneling channel for both "heavy" and "light" holes. The resonant tunneling structure can be used as a spin filter for holes for adjusting the Fermi energy and the thickness of the junctions.

Structural and photoelectric studies on double barrier quantum well infrared detectors

GaAs/AlAs/GaAlAs double barrier quantum well (DBQW) structures are employed for making the 3 similar to 5 mu m photovoltaic infrared (IR) detectors with a peak detectivity of 5x10(11) cmHz(1/2)/W at 80K. The double crystal x-ray diffraction is combined with synchrotron radiation x-ray analysis to determine the exact thickness of GaAs, AlAs and GaAlAs sublayers. The interband photovoltaic (PV) spect ra of the DBQW sample and the spectral response of the IR photocurrent of the devices are measured directly by edge excitation method, providing the information about spatial separation processes of photogenerated carriers in the multiquantum wells and the distribution of built-in field in the active region.

Interface delamination of the thermal barrier coating subjected to local heating

To investigate the possible failure modes of the thermal barrier coating (TBC) used to protect the scramjet combustion chamber, the local heating via laser beam irradiation was utilized to simulate the service condition of high thermal flux and high temperature gradient. Firstly, the experimental method and process were described and the typical fracture morphology of the TBC under test were provided. Then, the theoretical and finite element modeling were carried out to study the temperature, deformation and stresses of the specimen when the top ceramic coat was subjected to local heating, and to demonstrate the mechanism on the failure of the TBC. It is revealed that the interface delamination shall appear and ultimately lead to the failure of the TBC under such thermal loading of local quick heating. According to the outcome of this study, the driving force of the interface delamination is influenced greatly by the key structural parameters and performance matching. Moreover, by utilizing the rules of the effects of these parameters on the fracture driving force, there is some possibility for the designer to optimize the performances of the TBC.

Fusion dynamics of symmetric systems near barrier energies

Within the framework of the improved isospin-dependent quantum molecular dynamics (ImIQMD) model,he fusion dynamics of symmetric reaction systems are investigated systematically. Calculations show that the number of nucleon transfer in the neck region is appreciably dependent on the incident energies, but strongly on he reaction systems. A comparison of the neck dynamics is performed for the symmetric reactions 58Ni+58Niand 64Ni+64Ni at energies in the vicinity of the Coulomb barrier. An increase of the ratios of the neutron to proton in the neck region at initial collision stage is observed and obvious for the latter system, which reduces the fusion barrier of two colliding nuclei. The distribution of the dynamical fusion barriers and the fusion excitation functions are calculated and compared with the available experimental data.