Polarity dependence of hexagonal inclusions and cubic twins in GaN/GaAs(001) epilayers measured by conventional X-ray pole figure and grazing incident diffraction pole figure

The distribution of mixed phases and its dependence on the polarity of cubic GaN epilayers are investigated by conventional X-ray pole figure and grazing incident diffraction (GID) pole figure. The hexagonal inclusions and cubic twins can be classified into two portions: one is formed with strict crystalline orientations, the other with crystalline misorientations. The former can be measured by conventional pole figures which reveal that the density of lamellate hexagonal grains and cubic twins located on (1 1 1)(Ga) and ((1) over bar (1) over bar1)(Ga) along [1 (1) over bar 0] direction are higher than those on ((1) over bar 1 1), and (1 (1) over bar 1)(N) along [110] direction. However, the low signals from tiny mixed phases with crystalline misorientations, detected by GID pole figures, distribute in a larger phi region near the [1 1 0] and [(1) over bar (1) over bar 0] directions with much weaker intensity, and in a smaller phi region near the [1 (1) over bar 0] and [(1) over bar 1 0] directions with slightly stronger intensity. (C) 2001 Elsevier Science B.V. All rights reserved.

Stability investigation of cubic GaN films grown by metalorganic chemical vapor deposition on GaAs (001)

The thermal stability of cubic-phase GaN (c-GaN) films are investigated by photoluminescence (PL) and Raman scattering spectroscopy. C-GaN films are grown on GaAs (001) substrates by metalorganic chemical vapor deposition. PL measurements show that the near-band-edge emissions in the as-grown GaN layers and thermally treated samples are mainly from c-GaN. No degradation of the optical qualities is observed after thermal annealing. Raman scattering spectroscopy shows that the intensity of the E-2 peak from hexagonal GaN grains increases with annealing temperature for the samples with poor crystal quality, while thermal annealing up to 1000 degrees C has no obvious effect on the samples with high crystal quality. (C) 1999 American Institute of Physics. [S0003-6951(99)04719-1].

Substrate surface atomic structure influence on the growth of InAlAs quantum dots

We have examined the influence of substrate surface orientation on self-assembled InAlAs/AlGaAs quantum dots grown on (0 0 1) and (n 1 1) A/B (n = 3, 5) GaAs substrates by molecular beam epitaxy (MBE). Preliminary characterizations have been performed using photoluminescence (PL) and transmission electron microscopy (TEM). The PL emission energies of quantum dots on high Miller index surface are found to be strongly dependent on the atomic-terminated surface (A or B surface) of the substrate. We observed that there were planar ordering larger islands on (3 1 1)B surface compared to (0 0 1) surface, in contrast, a rough interface and smaller "grains" on (3 1 1)A surface, this result is identical with PL emission energy from these islands. We propose that the rapid strain-induced surface "roughening" impedes the formation of 3D islands on A surface, and indicating that this is a promising approach of the realization of ordering distribution on (3 1 1)B plane for devices such as red-emitting semiconductor quantum dots lasers. (C) 1999 Elsevier Science B.V. All rights reserved.

Cubic-phase GaN light-emitting diodes

The feasibility of growing device-quality cubic GaN/GaAs(001) films by metal organic chemical vapor deposition has been demonstrated. The optical quality of the GaN films was characterized by room-temperature photoluminescence measurements, which shows a full width at half maximum of 46 meV. The structural quality of the films was investigated by transmission electron microscopy. There are submicron-size grains free from threading dislocations and stacking faults. More importantly, a cubic-phase GaN blue light-emitting diode has been fabricated. The device process, which is very simple and compatible with current GaAs technology, indicates a promising future for the blue light-emitting diode. (C) 1999 American Institute of Physics. [S0003-6951(99)01416-3].

子午岭人工油松林土壤种子库特征研究

采用野外调查取样和室内观测试验相结合的方法,研究了子午岭人工油松林土壤种子库的物种组成、密度、垂直分布等特征。结果表明:(1)土壤种子库储量密度平均为5711粒/m2,最大密度是9537粒/m2,最小密度是3563粒/m2。(2)土壤种子库的种子的垂直分布主要集中在0—2.5cm,2.5—5cm和5—7.5cm这3个层次,占75.38%～79.32%,枯枝落叶层和7.5—10cm层分布较少,占20.68%～24.62%。(3)土壤种子库物种组成主要为灌木和草本两个种类,无乔木植物,多年生草本在物种数和种子数上占据明显优势。

施氮和灌水对冬小麦叶片光合特性和籽粒产量的影响

大田条件下设置不同的施氮和灌水水平,研究施氮量和灌水量对冬小麦(Triticum aestivum L.)叶片光合作用生理及籽粒形成的影响。结果表明,施氮和灌水提高叶片Fv/Fm和Pn,并显著提高冬小麦籽粒产量、单位面积穗数和每穗粒数。施氮明显降低千粒重,而适量灌水明显提高千粒重。

CERIUM SILICIDE FORMATION IN THIN CE SI MULTILAYER FILMS

Alternating layers of Si(200 angstrom thick) and Ce(200 angstrom thick) up to 26 layers altogether were deposited by electron evaporation under ultrahigh vacuum conditions on Si(100) substrate held at 150-degrees-C. Isothermal, rapid thermal annealing has been used to react these Ce-Si multilayer films. A variety of analytical techniques has been used to study these multilayer films after annealing, and among these are Auger electron spectroscopy, Rutherford backscattering, X-ray diffraction, and high resolution transmission electron microscopy. Intermixing of these thin Ce-Si multilayer films has occurred at temperatures as low as 150-degrees-C for 2 h, when annealed. Increasing the annealing temperature from 150 to 400-degrees-C for 1 h, CeSi2 forms gradually and the completion of reaction occurs at approximately 300-400-degrees-C. During the formation of CeSi2 from 150-400-degrees-C, there is some evidence for small grains in the selected area diffraction patterns, indicating that CeSi2 crystallites were present in some regions. However, we have no conclusive evidence for the formation of epitaxial CeSi2 layers, only polycrystals were formed when reacted in the solid phase even after rapid thermal anneal at 900-degrees-C for 10 s. The formation mechanism has also been discussed in combining the results of the La-Si system.

Microstructural and compositional characteristics of GaN films grown on a ZnO-buffered Si(111) wafer

Polycrystalline GaN thin films have been deposited epitaxially on a ZnO-buffered (111)-oriented Si substrate by molecular beam epitaxy. The microstructural and compositional characteristics of the films were studied by analytical transmission electron microscopy (TEM). A SiO2 amorphous layer about 3.5 nm in thickness between the Si/ZnO interface has been identified by means of spatially resolved electron energy loss spectroscopy. Cross-sectional and plan-view TEM investigations reveal (GaN/ZnO/SiO2/Si) layers exhibiting definite a crystallographic relationship: [111](Si)//[111](ZnO)//[0001](GaN) along the epitaxy direction. GaN films are polycrystalline with nanoscale grains (similar to100 nm in size) grown along [0001] direction with about 20degrees between the (1 (1) over bar 00) planes of adjacent grains. A three-dimensional growth mode for the buffer layer and the film is proposed to explain the formation of the as-grown polycrystalline GaN films and the functionality of the buffer layer. (C) 2004 Elsevier Ltd. All rights reserved.

Raman scattering and infrared absorption of silicon nanocrystals in silicon oxide matrix

Structural dependence on annealing of a-SiOx:H was studied by using infrared absorption and Raman scattering. The appearance of Raman peaks in the range of 513-519cm(-1) after 1170 degreesC annealing was interpreted as the formation nanocrystalline silicon with the sizes from 3-10nm. The Raman spectra also show the existence of amorphous-like silicon phase, which is associated with Si-Si bond re-construction at boundaries of silicon nanocrystallites. The presence of the shoulder at 980cm(-1) of Si-O-Si stretching vibration at 1085cm(-1) in infrared spectra imply that except that SiO2 phase, there is silicon sub-oxide phase in the films annealed at 1170 degreesC. This sub-oxide phase is located at the interface between Si crystallites and SiO2, and thus support the shell model for the mixed structures of Si grains and SiO2 matrix.

Preparation and photoluminescence of nc-Si/SiO2 MQW

The deposition rate and refractive index for a-Si(amorphous silicon) and SiO2 grown by PECVD were studied under different pressure, power and proportion of reactant source gases. a-Si/SiO2 MQW(multi-quantum well) with high quality was deposited under suitable conditions, in which the thickness of the a-Si layers is several nanometers. The sample of a-Si/SiO2 MQW was crystallized by laser annealing. Because of the confinement of the SiO2 layers, crystalline grains were formed during the a-Si layers were being crystallized. The size of the crystalline grains were not more than the thickness of the a-Si layers. The a-Si layers were crystallized to be nanometer crystalline silicon(nc-Si), therefore, nc-Si/SiO2 MQW was formed. For the a-Si/SiO2 MQW with 4.0nm a-Si wells separated by 5nm SiO2 barries, most of the a-Si were crystallized to silicon grains after laser annealing,and the size of the grains is 3.8nm. Strong photoluminescence with three peaks from the nc-Si/SiO2 MQW was detected at 10K. The wavelength of the peaks were 810nm, 825nm and 845nm, respectively.

Influence of processing temperature on microstructure and microhardness of copper subjected to high-pressure torsion

Cu samples were subjected to high-pressure torsion (HPT) with up to 6 turns at room temperature (RT) and liquid nitrogen temperature (LNT), respectively. The effects of temperature on grain refinement and microhardness variation were investigated. For the samples after HPT processing at RT, the grain size reduced from 43 mu m to 265 nm, and the Vickers microhardness increased from HV52 to HV140. However, for the samples after HPT processing at LNT, the value of microhardness reached its maximum of HV150 near the center of the sample and it decreased to HV80 at the periphery region. Microstructure observations revealed that HPT straining at LNT induced lamellar structures with thickness less than 100 nm appearing near the central region of the sample, but further deformation induced an inhomogeneous distribution of grain sizes, with submicrometer-sized grains embedded inside micrometer-sized grains. The submicrometer-sized grains with high dislocation density indicated their nonequilibrium nature. On the contrary, the micrometer-sized grains were nearly free of dislocation, without obvious deformation trace remaining in them. These images demonstrated that the appearance of micrometer-sized grains is the result of abnormal grain growth of the deformed fine grains.

耗散粒子动力学处理复杂固体壁面的一种有效方法

耗散粒子动力学(dissipative particle dynamics,DPD)作为一种介观尺度拉格朗日型粒子方法,已经成功地应用于微纳米流动和生化科技的研究中. 复杂固体壁面的处理和壁面边界条件的实施一直是DPD方法发展及应用的一个障碍. 提出了处理复杂固体壁面的一种新的方法. 复杂固体区域通过冻结随机分布并且达到平衡状态的DPD粒子代表;所冻结的DPD粒子位于临近流动区域的一个截距内;在靠近固体壁面的流动区域中设置流动反弹层,当流动DPD粒子进入此流动层后反弹回流动区域. 应用这种固体壁面处理方法.

Initiation and development of water film by seepage

When water seeps upwards through a saturated soil layer, the soil layer may become instability and water films occur and develop. Water film serves as a natural sliding surface because of its very small friction. Accordingly, debris flow may happen. To investigate this phenomenon, a pseudo-three-phase media is presented first. Then discontinuity method is used to analyze the expansion velocity of water film. Finally, perturbation method is used to analyze the case that a water flow is forced to seep upwards through the soil layer while the movement of the skeleton may be neglected relative to that of water. The theoretical evolutions of pore pressure gradient, effective stress, water velocity, the porosity and the eroded fine grains are obtained. It can be seen clearly that with the erosion and re-deposited of fine grains, permeability at some positions in the soil layer becomes smaller and smaller and, the pore pressure gradient becomes bigger and bigger, while the effective stress becomes smaller and smaller. When the effective stress equals zero, e.f. liquefaction, the water film occurs. It is shown also that once a water film occurs, it will be expanded in a speed of (U)(t)/(1 - E >).

A study on water film in saturated sand

Water film can serve as a sliding surface and cause landslides on gentle slopes. The development of "water film" in saturated sand is analyzed numerically and theoretically based on a quasi-three-phase model. It is shown that stable water films initiate and grow if the choking state (where the fluid velocity decreases to near zero) remains steady in a liquefied sand column. Discontinuity can occur in pore water velocity, grain velocity and pore pressure after the initiation of a water film. However, the discontinuity and water film can disappear once the choking state is changed. The key to the formation of water film is the choking in the sand column caused by eroded fine grains.

Numerical investigation of particle velocity distributions in aeolian sand transport

Particle velocity distribution in a blowing sand cloud is a reflection of saltation movement of many particles. Numerical analysis is performed for particle velocity distribution with a discrete particle model. The probability distributions of resultant particle velocity in the impact-entrainment process, particle horizontal and vertical velocities at different heights and the vertical velocity of ascending particles are analyzed. The probability distributions of resultant impact and lift-off velocities of saltating particles can be expressed by a log-normal function, and that of impact angle comply with an exponential function. The probability distribution of particle horizontal and vertical velocities at different heights shows a typical single-peak pattern. In the lower part of saltation layer, the particle horizontal velocity distribution is positively skewed. Further analysis shows that the probability density function of the vertical velocity of ascending particles is similar to the right-hand part of a normal distribution function, and a general equation is acquired for the probability density function of non-dimensional vertical velocity of ascending particles which is independent of diameter of saltating particles, wind strength and height. These distributions in the present numerical analysis are consistent with reported experimental results. The present investigation is important for understanding the saltation state in wind-blown sand movement. (C) 2009 Elsevier B.V. All rights reserved.