138 resultados para SCANNING SMALL-ANGLE X-RAY SCATTERING


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Langmuir-Blodgett (LB) monolayers of three kinds of soluble polyimides were prepared with the direct deposition method, The monolayer structures were characterized with W-vis absorption spectroscopy, the wide angle X-ray scattering method and electrochemical techniques. The polyimide molecules in the LB monolayers lie orderly on the substrate surfaces with the orientation in which the dianhydride group is normal to the substrate surface and two carbonyl oxygen groups close to the surface. Therefore, the thickness of the three kinds of polyimide LB monolayers are the same because it depends on the distance between the two carbonyl oxygen groups in the same ring. The area of monomeric units are dependent on the length of the diamine group. The model of the molecular packing proposed from the quantomechanical calculation is in good agreement with the experimental results. (C) 1997 Elsevier Science S.A.

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The hydrosol of SnO2 nanoparticles (NP) have been prepared by colloid chemistry method. The composite LB monolayer and multilayer of SnO2 NP-AA have been obtained by LB technique at the gas-liquid interface of the hydrosol subphase. The structures of the monolayer and multilayer were characterized by IR, UV-Vis, small angle X-ray diffraction spectroscopy and TEM technique, The results indicate that the coverage of SnO2 NP at the composite monolayer's surface is high and the sites of SnO2 NP are similar. The multilayer has good periodic structure.

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Interpenetrating polymer networks (IPNs) have been synthesized from prepolymers that form miscible blends. All IPNs made from polyacrylate ((polyethylene glycol diacrylate), PEGDA) and epoxy (diglycidyl ether of bisphenol A, DGEBA) can be made in phase separated states by incorporating crosslinks. However, blends of these prepolymers, having a negative Flory-Huggins interaction parameter, are highly miscible. This indicates that formation of IPNs favours phase separation relative to blends. The microphase separation characteristics in the PEGDA/DGEBA IPNs were determined using smalt-angle X-ray scattering (SAXS). The Debye-Bueche and Guinier methods were used to calculate the correlation lengths of the segregated phases existing in the PEGDA/DGEBA IPNs. The results from SAXS showed that the size of the phase segregation zones changed with composition from about 50 to 100 Angstrom.

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The structural parameters of the aggregated state of polyamide (PA)-1010 annealed at various temperatures were computed by means of the desmearing intensity from Smalt Angle X-ray Scattering (SAXS) measurements and by using the concept of the distance distribution function. The results indicated that the structural parameters of the aggregated state were strongly dependent upon heat treatment conditions and the maximum values of the structural parameters were obtained for the samples annealed at T = 175 degrees C. The particle size Z annealed at different temperature was ranged between 8.1-12.8nm, and the values of the distance distribution function P-max(Z) were obtained when Z = 4.0-6.8 nm. Using one dimension electron density correlation function (1D EDCF) method long period (L) and thickness of the lamellar (d(0)) were estimated and were found to increase with the increase of the degree of crystallinity.

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A series of poly(aryl ether ketone)s containing meta-phenyl links are synthesized, DSC and wide-angle X-ray scattering, etc, are used to study the general properties of the polymers, With the increasing of meta linkage monomer percentage, the melting temperature decreases sharply at first, then rises steadily, the glass transition point. keeps a stable value, and crystallin;ty and crystallizing rate are reduced, A part of amorphous film of the polymer is annealed at different temperatures, DSC scan shows that besides T-m, a new melting peak (T-m') at low temperature appears, And with heat treating temperature rising, T-m' shifts to high temperature, and T-m keeps a stable value.

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Magnetic multilayers [NixFe100-x/Mo-30] grown by dc-magnetron sputtering were investigated by x-ray small-angle reflection and high-angle diffraction. Structural parameters of the multilayers such as the superlattice periods, the interfacial roughness, and interplane distance were obtained. It was found that for our NixFe100-x/Mo system, the Mo layer has bcc structure with [110] preferential orientation, while the preferential orientation of the NixFe100-x layer changes from a fee structure with [111] preferential orientation to a bcc structure with [110] preferential orientation with decreasing values of x. An intermixing layer located in the interlayer region between the NixFe100-x and Mo layers exists in the multilayers, and its thickness is almost invariant with respect to an increase of Mo layer thickness and/or a decrease of x in the region of x greater than or equal to 39. The thickness of the intermixing layer falls to zero when x less than or equal to 23.

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The crystallinity of two series of uniform oligo(oxyethylene) mono-n-alkyl ethers has been investigated: alpha-alkyl,omega-hydroxyoligo(oxyethylene)s, H(CH2)n(OCH2CH2)mOH, and alpha-alkyl,omega-methoxyoligo(oxyethylene)s, H(CH2)n(OCH2CH2)mOCH3. The hydroxy-ended oligomers formed bilayer crystals, and the methoxy-ended oligomers formed monolayer crystals. The helical oxyethylene blocks were oriented normal to the layer-crystal end-group plane, whilst the trans-planar alkyl blocks were generally tilted at an angle delta = 60-degrees. The melting temperature and enthalpy of fusion were higher for hydroxy-ended oligomers than for corresponding methoxy-ended oligomers.

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A GaAs/AlGaAs two-dimensional electron gas (2 DEG) structure with the high mobility of mu(2K) = 1.78 x 10(6) cm(2)/Vs has been studied by low-temperature Hall and Shubnikov de Hass (SdH) measurements. Quantum lifetimes related to all-angle scattering events reduced from 0.64 ps to 0.52 ps after illuminating by Dingle plots, and transport lifetimes related to large-angle scattering events increasing from 42.3 ps to 67.8 ps. These results show that small-angle scattering events become stronger. It is clear that small-angle scattering events can cause the variation of the widths of the quantum Hall plateaus.

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Linear Thomson scattering of a short pulse laser by relativistic electron lids been investigated using computer simulations. It is shown that scattering of an intense laser pulse of similar to 33 fs full width at half maximum, with an electron of gamma(o) = 10 initial energy, generates an ultrashort, pulsed radiation of 76 attoseconds, with a photon wavelength of 2.5 nm in the backward direction. The scattered radiation generated by a highly relativistic electron has superior quality in terms of its pulse width and angular distribution in comparison to the one generated by lower relativistic energy electron.

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Linear Thomson scattering by a relativistic electron of a short pulse laser has been investigated by computer simulation. Under a laser field with a pulse of 33.3-fs full-width at half-maximum, and the initial energy of an electron of gamma(0) = 10, the motion of the electron is relativistic and generates an ultrashort radiation of 76-as with a photon wave length of 2.5-nm in the backward scattering. The radiation under a high relativistic energy electron has better characteristic than under a low relativistic energy electron in terms of the pulse width and the angular distribution. (c) 2005 Elsevier GrnbH. All rights reserved.

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Variations of peak position of the rocking curve in the Bragg case are measured from a Ge thin crystal near the K-absorption edge. The variations are caused by a phase change of the real part of the atomic scattering factor. Based on the measurement, the values of the real part are determined with an accuracy of better than 1%. The values are the most reliable ones among those reported values so far as they are directly determined from the normal atomic scattering factors.

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We improved the method previously used to determine the lattice constants and misorientation of GaAs/Si by recording the patterns of X-ray (004) and (220) reflections. The (220) reflection was measured from the (110) cross section of a GaAs/Si epilayer. The structural properties of the GaAs/Si epilayers grown by metal-organic chemical-vapor deposition (MOCVD) using an ultrathin a-Si buffer layer were investigated. The rotation angle of GaAs/Si epilayers grown by MOCVD using an a-Si buffer layer is very small and the lattice constants of these GaAs/Si epilayers agree quite well with elastic theory.

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High-resolution X-ray diffraction has been employed to investigate the diffuse scattering in a (0001) oriented GaN epitaxial film grown on sapphire substrate. The analysis reveals that defect clusters are present in GaN films and their concentration increases as the density of threading dislocations increases. Meanwhile, the mean radius of these defect clusters shows a reverse tendency. This result is explained by the effect of clusters preferentially forming around dislocations, which act as effective sinks for the segregation of point defects. The electric mobility is found to decrease as the cluster concentration increases.