Defect Cluster-Induced X-Ray Diffuse Scattering in GaN Films Grown by MOCVD

High-resolution X-ray diffraction has been employed to investigate the diffuse scattering in a (0001) oriented GaN epitaxial film grown on sapphire substrate. The analysis reveals that defect clusters are present in GaN films and their concentration increases as the density of threading dislocations increases. Meanwhile, the mean radius of these defect clusters shows a reverse tendency. This result is explained by the effect of clusters preferentially forming around dislocations, which act as effective sinks for the segregation of point defects. The electric mobility is found to decrease as the cluster concentration increases.

High-resolution X-ray diffraction has been employed to investigate the diffuse scattering in a (0001) oriented GaN epitaxial film grown on sapphire substrate. The analysis reveals that defect clusters are present in GaN films and their concentration increases as the density of threading dislocations increases. Meanwhile, the mean radius of these defect clusters shows a reverse tendency. This result is explained by the effect of clusters preferentially forming around dislocations, which act as effective sinks for the segregation of point defects. The electric mobility is found to decrease as the cluster concentration increases.

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国家自然科学基金(批准号:6 5 6 1,6 476 21,6 576 3),国家重点基础研究发展规划(批准号:2 7CB9367 )资助项目

Institute of Semiconductors, Chinese Academy of sciences;Research and Development Center for Semiconductor Lighting, Institute of Semiconductors, Chinese Academy of Sciences

国家自然科学基金(批准号:6 5 6 1,6 476 21,6 576 3),国家重点基础研究发展规划(批准号:2 7CB9367 )资助项目