Controlled growth of uniform silver clusters on HOPG

We have investigated growth of silver clusters on three different, i.e. normally cleaved, thermally oxidized and Ar+ ion sputtered highly oriented pyrolytic graphite (HOPG), surfaces. Scanning tunneling microscopy (STM) observations reveal that uniformly sized and spaced Ag clusters only form on the sputtered surface. Ar+ sputtering introduces relatively uniform surface defects compared to other methods. These defects are found to serve as preferential sites for Ag cluster nucleation, which leads to the formation of uniform clusters. (c) 2005 Elsevier B.V. All rights reserved.

Partially coherent tunneling through a series of barriers: Inelastic scattering versus pure dephasing

Within the Buttiker dephasing model, the backscattering in the dephasing process is eliminated by setting a proper boundary condition. Explicit expression is carried out for the effective total tunneling probability in the presence of multiple pure dephasing scatterers with partial coherence. The derived formula is illustrated analytically by various limiting cases, and numerically for its application in tunneling through multibarrier systems.

Self-assembled monolayer growth of phospholipids on hydrophobic surface toward mimetic biomembranes: Scanning probe microscopy study

Atomic force microscopy (AFM) and lateral force microscopy (LFM) were used simultaneously to analyze a model membrane bilayer structure consisting of a phospholipid outer monolayer deposited onto organosilane-derivatized mica surfaces, which were constructed by using painting and self-assembly methods. The phospholipid used as outer monolayer was dimyristoylphosphatidylcholine (DMPC). The hydrocarbon-covered substrate that formed the inner half bilayer was composed of a self-assembly monolayer (SAM) of octadecyltrichloroorganosilane (OTS) on mica. SAMs of DMPC were formed by exposing hydrophobic mica to a solution of DMPC in decane/isobutanol and subsequently immersing into pure water. AFM images of samples immersed in solution for varying exposure times showed that before forming a complete monolayer the molecules aggregated into dense islands (2.2-2.6 nm high) on the surface. The islands had a compact and rounded morphology. LFM, coupled with topographic data obtained with the atomic force mode, had made possible the distinction between DMPC and OTS. The rate constant of DMPC growth was calculated. This is the first systematic study of the SAM formation of DMPC by AFM and LFM imaging. It reveals more direct information about the film morphology than previous studies with conventional surface analytical techniques such as infrared spectroscopy, X-ray, or fluorescence microscopy.

Scanning tunnelling microscopy observation of cytochrome-c denaturation induced by bromopyrogal red on highly oriented pyrolytic graphite

The denaturation of cytochrome-e (cyt-c) induced by bromopyrogal red (BPR) was studied by scanning tunnelling microscopy (STM) on the electrochemically pretreated highly oriented pyrolytic graphite (HOPG) surface. STM images reveal that denatured cyt-c molecules exist in variable states including aggregates, globular compact, partially unfolded and combined with BPR molecule. The apparently low image contrast of denatured cyt-c observed in this experiment comparing to that of native cyt-c molecules, and the relative low image contrast of the unfolded part comparing with the compact globular part, are ascribed to the unfavourable tunnelling paths for the conformational variations of denatured cyt-c molecules. (C) 1997 Elsevier Science B.V.

Raman spectroscopy and luminescent properties of ZnO nanostructures fabricated by femtosecond laser pulses

In this paper, we report the laser-induced periodic structure with different spatial characteristics on the surface of polished ZnO single-crystalline by high repetition rate femtosecond laser pulses. This study demonstrates that, using different laser parameters and irradiation conditions, ZnO nanoripples and nanorods were successfully prepared. We have investigated the surface by means of scanning electron microscope (SEM), Raman scattering and photoluminescence (PL). We propose that second-order harmonic has a strong influence on the formation of nanostructures. (c) 2007 Elsevier B.V All rights reserved.

Scanning electron microscopy observation of in-device InAs/AlAs quantum dots by selective etching of capping layers

Self-assembled InAs/AlAs quantum dots embedded in a resonant tunneling diode device structure are grown by molecular beam epitaxy. Through the selective etching in a C6H8O7 center dot H2O-K3C6H5O7 center dot H2O-H2O2 buffer solution, 310 nm GaAs capping layers are removed and the InAs/AlAs quantum dots are observed by field-emission scanning electron microscopy. It is shown that as-fabricated quantum dots have a diameter of several tens of nanometers and a density of 10(10) cm(-2) order. The images taken by this means are comparable or slightly better than those of transmission electron microscopy. The undercut of the InAs/AlAs layer near the edges of mesas is detected and that verifies the reliability of the quantum dot images. The inhomogeneous oxidation of the upper AlAs barrier in H2O2 is also observed. By comparing the morphologies of the mesa edge adjacent regions and the rest areas of the sample, it is concluded that the physicochemical reaction introduced in this letter is diffusion limited.

Electron resonant tunneling through InAs/GaAs quantum dots embedded in a Schottky diode with an AlAs insertion layer

Molecular beam epitaxy was employed to manufacture self-assembled InAs/GaAs quantum dot Schottky resonant tunneling diodes. By virtue of a thin AlAs insertion barrier, the thermal current was effectively reduced and electron resonant tunneling through quantum dots under both forward and reverse biased conditions was observed at relatively high temperature of 77 K. The ground states of quantum dots were found to be at similar to 0.19 eV below the conduction band of GaAs matrix. The theoretical computations were in conformity with experimental data. (c) 2006 The Electrochemical Society.

Resonant tunneling theory of planar quantum dot structures

The ballistic transport in the semiconductor, planar, circular quantum dot structures is studied theoretically. The transmission probabilities show apparent resonant tunneling peaks, which correspond to energies of bound states in the dot. By use of structures with different angles between the inject and exit channels, the resonant peaks can be identified very effectively. The perpendicular magnetic field has obvious effect on the energies of bound states in the quantum dot, and thus the resonant peaks. The treatment of the boundary conditions simplifies the problem to the solution of a set of linear algebraic equations. The theoretical results in this paper can be used to design planar resonant tunneling devices, whose resonant peaks are adjustable by the angle between the inject and exit channels and the applied magnetic field. The resonant tunneling in the circular dot structures can also be used to study the bound states in the absence and presence of magnetic field.

Magnetic-field-induced nonthermal occupation of higher subbands in a three-barrier tunneling structure

When injected electrons in a quantum well first experience an intersubband relaxation process before their escaping by tunneling through a double-barrier structure behind, the magnetic suppression of intersubband LO or LA phonon scattering can give rise to a noticeable nonthermal occupation in higher-lying subbands. That is clearly verified by the relative intensity ratio of the interband photoluminescence spectra for E-2-HH1 and E-1-HH1 transitions. The observed phenomenon may provide an effective method for controlling intersubband scattering rate, a central issue in so-called quantum cascade lasers, and facilitating the population inversion between subbands in quantum wells.

Operation of the qubit based on photon-assisted tunneling in a coupled quantum-dot system and the influence of dephasing

We derive the generalized rate equation for the coupled quantum-dot (QD) system irradiated by a microwave field in the presence of a quantum point contact. It is shown that when a microwave field is tuned in resonance with the energy difference between the ground states of two QD's, the photon-assisted tunneling occurs and, as a result, the coupled QD system may be used as the single qubit. Furthermore, we show that the oscillating current through the detector decays drastically as the dephasing rate increases, indicating clearly the influence of the dephasing effect induced by the quantum point contact used as a detecting device.

Electrolyte electroreflectance spectroscopy studies on the interfacial behavior of the near-surface In0.15Ga0.85As/GaAs quantum well electrode vertical bar non-aqueous electrolyte

Electrolyte electroreflectance spectra of the near-surface strained-layer In0.15Ga0.85As/GaAs double single-quantum-well electrode have been studied at different biases in non-aqueous solutions of ferrocene and acetylferrocene. The optical transitions, the Franz-Keldysh oscillations (FKOs) and the quantum confined Stark effects (QCSE) of In0.15Ga0.85As/GaAs quantum well electrodes are analyzed. Electric field strengths at the In0.15Ga0.85As/GaAs interface are calculated in both solutions by a fast Fourier transform analysis of FKOs. A dip is exhibited in the electric field strength versus bias (from 0 to 1.2 V) curve in ferrocene solution. A model concerning the interfacial tunneling transfer of electrons is used to explain the behavior of the electric field. (C) 2001 Elsevier Science B.V. All rights reserved.

Tunneling behaviors of photogenerated electrons in In0.15Ga0.85As/GaAs quantum well photoelectrodes

The photovoltaic spectral features and the behaviors of photocurrent versus the electrode potential for near surface In0.15Ga0.85As/GaAs quantum well electrodes have been investigated in nonaqueous solutions of ferrocene and acetylferrocene. The photovoltaic spectrum shows a sharp structure that reflects confined state-to-state exciton transition in the quantum well. Deep dips are observed in the photocurrent versus the electrode potential curves in both electrolytes at the different electrode potentials under the illumination of exciton resonance wavelength. These dips are qualitatively explained by considering the interfacial tunneling transfer of photogenerated electron within the quantum well.

Valence band offset of MgO/TiO2 (rutile) heterojunction measured by X-ray photoelectron spectroscopy

The valence band offset (VBO) of MgO/TiO2 (rutile) heterojunction has been directly measured by Xray photoelectron spectroscopy. The VBO of the heterojunction is determined to be 1.6 +/- 0.3 eV and the conduction band offset (CBO) is deduced to be 3.2 +/- 0.3 eV, indicating that the heterojunction exhibits a type-I band alignment. These large values are sufficient for MgO to act as tunneling barriers in TiO2 based devices. The accurate determination of the valence and conduction band offsets is important for use of MgO as a buffer layer in TiO2 based field-effect transistors and dye-sensitized solar cells.

DETERMINATION OF THE CONDUCTION-BAND OFFSET OF A SINGLE ALGAAS BARRIER LAYER USING DEEP-LEVEL TRANSIENT SPECTROSCOPY

The tunneling from an AlGaAs confined thin layer to a GaAs layer in the GaAs/Al0.33Ga0.67As/GaAs structure during the trapped electron emission from deep level in the AlGaAs to its conduction band has been observed by deep level transient spectroscopy. With the aid of the tunneling effect, the conduction-band offset DELTAE(c) was determined to be 0.260 eV, corresponding to 63% of DELTAE(g). A calculation was also carried out based on this tunneling model by using the experimental value of DELTAE(c) = E2 - E1 = 0. 260 eV, and good agreement between the experimental and calculated curves is obtained.

Photoluminescence investigation of charge build-up process in the emitter of a double-barrier resonant tunneling structure

Charge build-up process in the emitter of a double-barrier resonant tunneling structure is studied by using photoluminescence spectroscopy. Clear evidence is obtained that the charge accumulation in the emitter keeps almost constant with bias voltages in the resonant regime, while it increases remarkably with bias voltages beyond resonant regime. The optical results are in good agreement with the electrical measurement. It is demonstrated that the band gap renormalization plays a certain rob in the experiment.