Pipeline Architecture and Parallel Computation-Based Real-Time Stereovision Tracking System for Surgical Navigation

This paper studies the development of a real-time stereovision system to track multiple infrared markers attached to a surgical instrument. Multiple stages of pipeline in field-programmable gate array (FPGA) are developed to recognize the targets in both left and right image planes and to give each target a unique label. The pipeline architecture includes a smoothing filter, an adaptive threshold module, a connected component labeling operation, and a centroid extraction process. A parallel distortion correction method is proposed and implemented in a dual-core DSP. A suitable kinematic model is established for the moving targets, and a novel set of parallel and interactive computation mechanisms is proposed to position and track the targets, which are carried out by a cross-computation method in a dual-core DSP. The proposed tracking system can track the 3-D coordinate, velocity, and acceleration of four infrared markers with a delay of 9.18 ms. Furthermore, it is capable of tracking a maximum of 110 infrared markers without frame dropping at a frame rate of 60 f/s. The accuracy of the proposed system can reach the scale of 0.37 mm RMS along the x- and y-directions and 0.45 mm RMS along the depth direction (the depth is from 0.8 to 0.45 m). The performance of the proposed system can meet the requirements of applications such as surgical navigation, which needs high real time and accuracy capability.

Valence band offset of MgO/TiO2 (rutile) heterojunction measured by X-ray photoelectron spectroscopy

The valence band offset (VBO) of MgO/TiO2 (rutile) heterojunction has been directly measured by Xray photoelectron spectroscopy. The VBO of the heterojunction is determined to be 1.6 +/- 0.3 eV and the conduction band offset (CBO) is deduced to be 3.2 +/- 0.3 eV, indicating that the heterojunction exhibits a type-I band alignment. These large values are sufficient for MgO to act as tunneling barriers in TiO2 based devices. The accurate determination of the valence and conduction band offsets is important for use of MgO as a buffer layer in TiO2 based field-effect transistors and dye-sensitized solar cells.

Short range scattering mechanism of type-II GaSb/GaAs quantum dots on the transport properties of two-dimensional electron gas

We have studied the scattering process of AlGaAs/GaAs two-dimensional electron gas with the nearby embedded GaSb/GaAs type-II quantum dots (QDs) at low temperature. Quantum Hall effect and Shubnikov-de Haas oscillation were performed to measure the electron density n(2D), the transport lifetime tau(t) and the quantum lifetime tau(q) under various biased gate voltage. By comparing measured results of QDs sample with that of reference sample without embedded QDs, mobilities (transport mobility mu(t) and quantum mobility mu(q)) dominated by GaSb QDs scattering were extracted as functions of n(2D). It was found that the ratios of tau(t) to tau(q) were varying within the range of 1-4, implying the scattering mechanism belonging to the sort of short-range interaction. In the framework of Born approximation, a scattering model considering rectangular-shaped potential with constant barrier height was successfully applied to explain the transport experimental data. In addition, an oscillating ratio of tau(t)/tau(q) with the increasing n(2D) was predicted in the model.

Real-time data processing of interferential imaging spectrometer based on FPGA

Based on the data processing technologies of interferential spectrometer, a sort of real-time data processing system on chip of interferential imaging spectrometer was studied based on large capacitance and high speed field programmable gate array( FPGA) device. The system integrates both interferograrn sampling and spectrum rebuilding on a single chip of FPGA and makes them being accomplished in real-time with advantages such as small cubage, fast speed and high reliability. It establishes a good technical foundation in the applications of imaging spectrometer on target detection and recognition in real-time.

长期水分胁迫下氮、钾对夏玉米叶片光合特性的影响

采用2种不同夏玉米基因型(陕单9号,抗旱品种;陕单911,不抗旱品种)的盆栽试验,研究了长期水分胁迫下氮、钾对各生育期叶片净光合速率、蒸腾速率、胞间二氧化碳浓度和叶绿素含量的影响,旨在从光合生理特性揭示这些因子的抗旱机理。结果表明,长期水分胁迫下叶片净光合速率,蒸腾速率、胞间二氧化碳浓度(除成熟期)和叶绿素含量显著降低,不抗旱品种降幅更甚。抗旱品种的净光合速率和叶绿素含量大于不抗旱品种,而蒸腾速率和胞间二氧化碳浓度则相反。两品种苗期光合作用较弱,净光合速率和叶绿素含量均较低,抽雄期达到高峰。施氮能不同程度降低水分胁迫下玉米叶片的蒸腾速率,增加叶绿素含量.提高净光合速率,从而减缓水分胁迫对光合作用的伤害。随氮肥用量增加,不抗旱品种净光合速率和叶绿素含量显著升高,蒸腾速率和胞间二氧化碳浓度明显降低,两种氮肥用量间有显著差异;抗旱品种在低氮用量时效果显著,但高低氮用量间无显著区别。钾对受水分胁迫的玉米表现出比氮肥更突出的效果。相反,在适量供水条件下,氮、钾肥的作用明显下降。以上结果表明,适当用量的氮、钾肥可以有效地改善水分胁迫下作物叶片的光合特性,从而增强作物的抗旱性。

Electron tunneling through double magnetic barriers on the surface of a topological insulator

We study electron tunneling through a planar magnetic and electric barrier on the surface of a three-dimensional topological insulator. For the double barrier structures, we find (i) a directional-dependent tunneling which is sensitive to the magnetic field configuration and the electric gate voltage, (ii) a spin rotation controlled by the magnetic field and the gate voltage, (iii) many Fabry-Perot resonances in the transmission determined by the distance between the two barriers, and (iv) the electrostatic potential can enhance the difference in the transmission between the two magnetization configurations, and consequently lead to a giant magnetoresistance. Points (i), (iii), and (iv) are alike with that in graphene stemming from the same linear-dispersion relations.

STUDIES OF THE PROMISING MATERIAL COSI2 ON GAAS SUBSTRATES

The thermal stability of CoSi2 thin films on GaAs substrates has been studied using a variety of techniques. The CoSi2 thin films were formed by depositing Co(500 angstrom) and Si(1800 angstrom) layers on GaAs substrates by electron-beam evaporation followed by annealing processes, where the Si inter-layer was used as a diffusion/reaction barrier at the interface. The resistivity of CoSi2 thin films formed is about 30 muOMEGA cm. The Schottky barrier height of CoSi2/n-GaAs is 0.76 eV and the ideality factor is 1.14 after annealing at 750-degrees-C for 30 min. The CoSi2/GaAs interface is determined to be thermally stable and the thin film morphologically uniform on GaAs after 900-degrees-C/30 s anneal. The CoSi2 thin films fulfill the requirements in GaAs self-aligned gate technology.

INTERFACIAL REACTIONS IN THE CO/SI/GAAS AND SI/CO/GAAS SYSTEMS

The interfacial reactions between thin films of cobalt and silicon and (100)-oriented GaAs substrates in two configurations, Co/Si/GaAs and Si/Co/GaAs, were studied using a variety of techniques including Auger electron spectroscopy, x-ray diffraction, and transmission electron microscopy. The annealing conditions were 200, 300, 400, 600-degrees-C for 30 min, and rapid thermal annealing for 15 s. It was found that Si layer in the Co/Si/GaAs system acts as a barrier at the interface between Co and GaAs when annealed up to 600-degrees-C. The interfacial reaction between Co and Si is faster than that between Co and GaAs in the system of Si/Co/GaAs. The sequence of compound formation for the two metallizations studied (Co/Si/GaAs and Si/Co/GaAs) depends strongly on the sample configuration as well as the layer thickness of Si and Co (Co/Si atomic ratio). From our results, it is promising to utilize Co/Si/GaAs multilayer film structure to make a CoSi2/GaAs contact, and this CoSi2 may offer an alternative to the commonly used W silicides as improved gate metallurgies in self-aligned metal-semiconductor field effect transistor (MESFET) technologies.

A NEW METHOD FOR MEASURING THE EFFECTIVE DIFFUSION CONSTANT OF 2-DIMENSIONAL ELECTRONS IN THE PRESENCE OF MAGNETIC-FIELDS

The transient charge response Q(t) of a two-dimensional electron gas (2DEG) in GaAs/AlxGa1-xAs heterostructures to a small pulse of the gate voltage, applied between the top gate and source electrodes in a Corbino structure, was employed to directly measure the effective diffusion constant of a 2DEG in the quantum Hall regime. The measured diffusion constant D showed a drastic change as the magnetic field was swept through the integer fillings of the Landau levels.

40Gb/s甚短距离并行光传输信号格式转换模块实现

根据OIF-VSR5-01.0的CWDM协议,对40 Gb/s甚短距离(VSR)并行光传输电信号转换实现原理和方法进行了研究,在高速的可编程逻辑器件FPGA(field programmable gate array)上,使用硬件描述语言,完成了对时钟数据恢复、信道去斜移、64 b/66 b转换、帧对准和扰码与解扰等功能模块的设计,实现了SFI-5接口与OIF-VSR5-01.0接口电信号格式的相互转换,建立了符合4信道CWDM协议的IP核.

A novel noise optimization technique for inductively degenerated CMOS LNA

This paper proposes a novel noise optimization technique. The technique gives analytical formulae for the noise performance of inductively degenerated CMOS low noise amplifier (LNA) circuits with an ideal gate inductor for a fixed bias voltage and nonideal gate inductor for a fixed power dissipation, respectively, by mathematical analysis and reasonable approximation methods. LNA circuits with required noise figure can be designed effectively and rapidly just by using hand calculations of the proposed formulae. We design a 1.8 GHz LNA in a TSMC 0.25 pan CMOS process. The measured results show a noise figure of 1.6 dB with a forward gain of 14.4 dB at a power consumption of 5 mW, demonstrating that the designed LNA circuits can achieve low noise figure levels at low power dissipation.

A Novel 4T nMOS-Only SRAM Cell in 32nm Technology Node

This paper proposes a novel loadless 4T SRAM cell composed of nMOS transistors. The SRAM cell is based on 32nm silicon-on-insulator （SO1） technology node. It consists of two access transistors and two pull-down transistors. The pull-down transistors have larger channel length than the access transistors. Due to the significant short channel effect of small-size MOS transistors, the access transistors have much larger leakage current than the pull-down transistors,enabling the SRAM cell to maintain logic ＂1＂ while in standby. The storage node voltages of the cell are fed back to the back-gates of the access transistors,enabling the stable ＂read＂ operation of the cell. The use of back-gate feedback also helps to im- prove the static noise margin （SNM） of the cell. The proposed SRAM cell has smaller area than conventional bulk 6T SRAM cells and 4T SRAM cells. The speed and power dissipation of the SRAM cell are simulated and discussed. The SRAM cell can operate with a 0. 5V supply voltage.

Detection of Terahertz Photon by GaAs-Based Single Electron Transistor at Low Temperatures

A reproducible terahertz (THz) photocurrent was observed at low temperatures in a Schottky wrap gate single electron transistor with a normal-incident of a CH_3OH gas laser with the frequency 2. 54THz.The change of source-drain current induced by THz photons shows that a satellite peak is generated beside the resonance peak. THz photon energy can be characterized by the difference of gate voltage positions between the resonance peak and satellite peak. This indicates that the satellite peak exactly results from the THz photon-assisted tunneling. Both experimental results and theoretical analysis show that a narrow spacing of double barriers is more effective for the enhancement of THz response.

A Monolithic Integrated Logic Circuit of Resonant Tunneling Diodes and a HEMT

A technology for the monolithic integration of resonant tunneling diodes (RTDs) and high electron mobility transistors (HEMTs) is developed. Molecular beam epitaxy is used to grow an RTD on a HEMT structure on GaAs substrate. The RTD has a room temperature peak-to-valley ratio of 5.2:1 with a peak current density of 22.5kA/cm~2. The HEMT has a 1μm gate length with a-1V threshold voltage. A logic circuit called a monostableto-bistable transition logic element (MOBILE) circuit is developed. The experimental result confirms that the fabricated logic circuit operates successfully with frequency operations of up to 2GHz.

A High-Performance Silicon Electro-Optic Phase Modulator with a Triple MOS Capacitor

We propose and analyze a novel Si-based electro-optic modulator with an improved metal-oxide-semiconductor (MOS) capacitor configuration integrated into silicon-on-insulator (SOI).Three gate-oxide layers embedded in the silicon waveguide constitute a triple MOS capacitor structure,which boosts the modulation efficiency compared with a single MOS capacitor.The simulation results demonstrate that the VπLπ product is 2.4V·cm.The rise time and fall time of the proposed device are calculated to be 80 and 40ps from the transient response curve,respectively,indicating a bandwidth of 8GHz.The phase shift efficiency and bandwidth can be enhanced by rib width scaling.