侵蚀环境人工灌木林土壤活性有机碳与碳库管理指数演变

采用时空互代法,以黄土丘陵区纸坊沟流域生态恢复过程中不同年限的人工柠条和沙棘林为研究对象,选取坡耕地和天然侧柏林为对照,分析了植被恢复过程中土壤有机碳(TOC)、活性有机碳(LOC)、非活性有机碳(NLOC)及碳库管理指数的演变特征。结果表明,侵蚀环境下的坡耕地由于人为干扰,土壤碳库含量偏低,退耕营造柠条林可以显著增加土壤碳库各组分含量,并随恢复年限呈显著线性关系,25 a时TOC、LOC和NLOC分别较坡耕地增加271%、144%和204%,仅为侧柏林的32%、30%和29%,碳库指数和碳库管理指数较坡耕地明显增加,增幅分别达到144%和108%,仅为侧柏林的28%和43%;不同灌木林对土壤碳库管理的改善作用不同,恢复年限相同的沙棘林土壤碳库组分含量和管理指数明显高于柠条林,坡耕地营造灌木林后土壤经营和管理水平得到了显著改善,土壤系统向着良性方向转变。相关性分析表明有机碳、活性有机碳、非活性有机碳、碳库指数、碳库管理指数与土壤主要肥力因子相关性极其密切,可以作为反映生态恢复过程土壤质量演变的指标。

侵蚀环境人工刺槐林土壤水稳性团聚体演变及其养分效应

采用时空互代法,以典型侵蚀环境纸坊沟流域生态恢复过程中不同年限的人工刺槐林为研究对象,选取坡耕地和天然侧柏林为参照,分析了植被恢复过程中土壤水稳性团聚体变化规律及其与土壤养分状况之间的相互关系。结果表明,侵蚀环境下的坡耕地由于人为耕作干扰,土壤水稳性团聚体含量低下,抗蚀性能较差。营造刺槐林前5 a土壤水稳性团聚体含量较坡耕地显著快速增加,随后增幅变缓,成对数增长,恢复25 a后土壤水稳性团聚体含量已经达到天然侧柏林水平。在植被恢复过程中土壤小粒径的水稳性团聚体逐渐聚集转变形成大粒径的团聚体。相关性分析和回归分析表明,植被恢复过程中>0.25 mm土壤水稳性团聚体与有机碳、全氮、碱解氮、速效钾、容重等相关性达到显著(p<0.05)或极显著水平(p<0.01),与全磷和速效磷相关性较弱。坡耕地退耕营造刺槐林后可以减少人为干扰,增加碳素和氮素供给,提高水稳性团聚体含量,使土壤抗蚀性能提高。

南海北部白云深水区之基础地质

白云深水区具有复杂而特殊的地质条件：位于中生代俯冲带的构造软弱带、新

Properties of cubic GaN grown by MBE

We review our investigation of cubic GaN films on (001) GaAs, focusing on the structural, optical, and electrical properties of these films. Cubic GaN films grown epitaxially on GaAs suffer from the large lattice mismatch between these two materials in that they contain extremely high densities of structural defects. Surprisingly, the optical quality of these films does not seem much affected by the presence of defects, as intense photoluminescence is detected a? room temperature and above. Finally, the rather high background electron concentrations in our films is shown to be a consequence of contamination with O and not to be an intrinsic property of cubic phase GaN. (C) 1997 Elsevier Science S.A.

一种基于高维形象几何理论的彩色图像增强算法

基于近年来发展起来的全新理论——高维形象几何与仿生信息学，提出一种彩色图像增强算法。本算法将彩色图像看作是高维空间的点，通过对多幅图片的分析，推导出点与点之间的内在联系，提出“模糊-再模糊-清晰”的增强算法，并由实验证明该算法对模糊图像的清晰化有很好的效果。

Zn-doped InGaAs Base Heterojunction Bipolar Transistors Grown by Low Pressure Metal Organic Chemical Vapor Deposition

High performance InP/InGaAs heterojunction bipolar transistors(HBTs) have been widely used in high-speed electronic devices and optoelectronic integrated circuits. InP-based HBTs were fabricated by low pressure metal organic chemical vapor deposition(MOCVD) and wet chemical etching. The sub-collector and collector were grown at 655 ℃ and other layers at 550 ℃. To suppress the Zn out-diffusion in HBT, base layer was grown with a 16-minute growth interruption. Fabricated HBTs with emitter size of 2.5×20 μm~2 showed current gain of 70~90, breakdown voltage(BV_(CE0))>2 V, cut-off frequency(f_T) of 60 GHz and the maximum relaxation frequency(f_(MAX)) of 70 GHz.

我国半导体科学领域基础研究迈入新阶段--国家自然科学基金半导体学科2004年申请概况分析

2004年国家自然科学基金委员会半导体学科受理的面上项目申请数终于有了突破,文中介绍了2004年半导体学科基金申请与资助概况,分析半导体学科受理申请的近期动态,介绍学科拟采取的对策,并附2004年半导体学科批准资助的面上项目及重点项目,供广大科研人员参考.

Ge_xSi_(1-x)材料生长的改善

利用超高真空化学气相淀积(UHV/CVD)系统在650℃生长出表面光亮的GeSi单晶。在1200L/min分子泵与前级机械泵间串接450L/min分子泵，改善了生长环境。串接分子泵后生长的样品的X射线双晶衍射分析表明，外延层衍射峰半宽仅为198arcsec，且出现了Pendellosung干涉条纹，说明外延层结晶质量很好。

Effect of rapid thermal annealing on the Raman spectrum of Si0.33Ge0.67/Si (100) alloy

The effect of thermal annealing on the Raman spectrum of Si0.33Ge0.67 alloy grown on Si (100) by molecular beam epitaxy is investigated in the temperature range of 550-800 degrees C. For annealing below 700 degrees C, interdiffusion at the interface is negligible and the residual strain plays the dominant role in the Raman shift. The strain-shift coefficients for Si-Ge and Ge-Ge phonon modes are determined to be 915 +/- 215 cm(-1) and 732 +/- 117 cm(-1), respectively. For higher temperature annealing, interdiffusion is significant and strongly affects the Raman shift and the spectral shape.