HOT CARRIER PHOTOLUMINESCENCE FROM STRAINED INXGA1-XAS/GAAS SINGLE QUANTUM WELLS

Autoria(s): ANDERSSON TG; CHEN ZG; XU ZY; XU JZ; GE WK
Data(s)

1989
Identificador

http://ir.semi.ac.cn/handle/172111/14517

http://www.irgrid.ac.cn/handle/1471x/101293
Idioma(s)

英语
Fonte

ANDERSSON TG; CHEN ZG; XU ZY; XU JZ; GE WK.HOT CARRIER PHOTOLUMINESCENCE FROM STRAINED INXGA1-XAS/GAAS SINGLE QUANTUM WELLS,JOURNAL OF CRYSTAL GROWTH ,1989,95(0):215-219
Palavras-Chave #半导体材料
Tipo

期刊论文
Acesso ao item digital