Magnetoresistance in a nominally undoped InGaN thin film

The magnetotransport properties of a nominally undoped InGaN thin film grown by metal-organic chemical vapor deposition were investigated. Resistivity was measured under a magnetic field up to 5 T over the temperature range of 3 to 298 K. The film exhibits a negative magnetoresistance at low temperatures. Its magnitude decreases with increasing temperature, and turns to be positive for temperatures above 100 K. The negative component was described by a model proposed by Khosla and Fischer for spin scattering of carriers in an impurity band. The positive part was attributed to the effect of Lorentz force on the carrier motion. Agreement between the model and the data is presented.

THE DEPENDENCE OF THE INVERSION LAYER THICKNESS ON THE FILM THICKNESS IN THIN-FILM SOI STRUCTURES

The dependence of the inversion-layer thickness on the film thickness in thin-film SOI structure is analyzed theoretically by using computer simulation. A new concept and parameter, the critical thickness of thin film all-bulk inversion, is introduced for the design of thin-film MOS/SOI devices. It is necessary to select the film thickness T(s1) close to the all-bulk strong inversion critical thickness in order to get high-speed and high-power operation of ultra-thin film MOS/SOI devices.

Electro-Optical Effect Measurement of Thin-Film Material Using PM Fiber Mach-Zehnder Interferometer

A polarization-maintaining (PM) fiber Mach-Zehnder (MZ) interferometer has been established to measure the EO effect of very thin film materials with optical anisotropy. Unlike a common MZ interferometer,all the components are connected via polarization-maintaining fibers. At the same time, a polarized DFB laser with a maximum power output of 10mW is adopted as the light source to induce a large extinction ratio. Here, we take it to determine the electro-optical coefficients of a very thin superlattice structure with GaAs, KTP, and GaN as comparative samples. The measured EO coefficients show good comparability with the others.

Monolithic Integration DFB Laser Array by Angling Active Stripe and Using Thin-Film Stripe Heater

国家863计划

Wavelength tunable electroabsorption modulated DFB baser with thin film heater

　

Applications of dielectric thin film by electron cyclotron resonance plasma chemical vapor deposition for semiconductor photoelectronic devices

The paper reports a method of depositing SiO2, SiNx, a:Si, Si3N4 and SiOxNy dielectric thin films by electron cyclotron resonance plasma chemical vapor deposition (ECR CVD) on InP, InGaAs and other compound semiconductor optoelectronic devices,and give a technology of depositing dielectric thin films and optical coatings by ECR CVD on Laser's Bars. The experiment results show the dielectric thin films and optical coatings are stable at thermomechanical property,optical properties and the other properties. In addition, the dielectric thin film deposition that there is low leakage current is reported for using as diffusion and ion implatation masks in the paper. In the finally, the dielectric film refractive index can be accurately controlled by the N-2/O-2/Ar gas flow rate.