光栅位移测量系统的误差自修正方法研究

文中介绍的误差自修正方法是通过光栅位移测量系统中单片机对光栅传感器的多个零位信号进行计数,并根据测量值和系统设定值得到的误差函数自动进行误差修正。实验结果表明,该方法对光栅位移测量系统的误差既可自动进行有效的修正,又可提高系统的测量精度。

水稻转录因子编码基因的表达谱和功能分析

水稻是重要的经济作物，也是单子叶植物分子遗传研究的模式植物。对水稻生长发育中基因的表达调控研究将为其遗传改良提供重要线索。转录因子在植物发育过程中对基因表达调控起关键作用，对其表达谱和功能的研究具有重要的理论和应用价值。 本研究一方面在水稻基因组水平上，利用cDNA芯片技术研究了水稻(中花11)种子发育过程中388个转录相关基因的表达谱;另一方面，在分离转录因子基因的基础上，利用分子生物学和遗传学方法研究了有关基因详细、具体的表达特征和功能。 利用cDNA芯片技术鉴定了123个种子优先表达、属于12类不同表达模式的转录相关基因。首次发现了许多主要在种子发育特定阶段表达的转录相关基因，还发现一些种子优先表达的转录相关基因参与了激素和非生物胁迫信号转导，为阐释水稻种子发育中的转录调节和信号网络的分子基础提供了很多有价值的线索。 在相关基因工作方面，分离了一个MADS-box类转录因子编码基因OsMDP（全长），表达模式析以及初步的功能分析揭示该基因作为一个负调控因子参与了BR控制的水稻叶节弯曲、胚芽鞘伸长、主根伸长等过程的信号转导，为水稻根、叶、胚芽鞘的发育、以及BR信号转导机制的研究提供了线索。 另外，从水稻的cDNA文库中分离并初步研究了三个分属BELL1、KNOX和HD-ZIP亚族的同源盒基因（片段），OsHB1主要和水稻种子发育相联系，OsHB2可能参与激素调节的发育或响应，OsHB3和水稻花药早期发育相关、对花药早期发育的调控研究有一定价值。

二穗短柄草的遗传转化及VER2等基因在水稻中的功能初探

作为模式植物，水稻和拟南芥对于禾本科植物的研究都有其不足，二穗短柄草（Brachypodiumdistachyon）有望成为它们良好的补充。它具有作为一种模式植物所应该具有的各项优点，并且它与温带禾本科植物的亲缘关系比水稻更近。建立其良好转化体系是其成功应用的一环。本论文第一章以建立其农杆菌转化体系为目的，成功的诱导了其胚性愈伤组织，获得了潮霉素抗性愈伤，发现乙酰丁香酮浓度与转化效率的关系，并证明Silwet L-77对提高其转化效率有明显的作用，为进一步完善其转化体系打下了基础。 VER2是由本实验室发现的小麦春化相关基因，并己证明它可能参与春化过程中O-CJlcNAc介导的信号传导。本论文第二章研究了将VER2在水稻中过表达所引起的表型，发现VER2与光有类似的抑制根生长的作用，并且能够互相影响对方的表型，说明二者在水稻内调控根生长的信号途径既有共同的作用，但是又相互制约。进一步的研究有可能会找到水稻根内IAA响应的重要因子。 在第三章中，根据芯片数据克隆了水稻的十个可能与赤霉素、茉莉酸和减数分裂相关的上下调基因，并对其中四个利用过表达和RNAi技术进行了水稻转化，以研究它们在水稻中的功能。其中一个基因过表达的表型与赤霉素缺陷造成矮化和叶色深绿两个特征一致，而RNAi导致植株高度增加、叶色黄绿。而该基因受赤霉素诱导上调的程度在三个芯片杂交结果中最大(log2=2.3275)这一点也为其功能提供了很好的提示，即可能参与了赤霉素信号途径。

国内外个牌号卷烟烟气有害生物效应的比较研究

采用测试终点不同的个短期生物学试验来检测国内外个牌号卷烟烟气的有害生物效应采用试验、转化人淋巴细 胞试验、小鼠嗜多染红细胞微核试验来检测烟气总粒相物的遗传毒性采用离体细胞培养的方法来检测烟气总粒相物的细胞 毒性采用动式被动吸烟小鼠急性毒性试验来检测烟气的急性毒性。从这个试验中确定了个生物学指标值、率、微核 率、细胞死亡率和小鼠死亡率并将这个试验的结果数据制成加权数值表, 统一起来评价卷烟烟气的有害生物效应。此外, 对个 生物学指标与的相关性分析结果表明, 值与有一定相关关系相关系数, 一。, 其余个指标与的 相关性未达到显著性水平, 说明这个牌号卷烟烟气有害生物活性与的关系不密切对个生物学指标之间的相 关性分析结果表明, 除了值与率和细胞死亡率的相关性达到显著水平外相关系数分别为。和。, , 其余均无相关性, 这与个生物试验的效应终点不一致有关系。总之这个生物学指标作为检测卷烟烟气有害生物效应的 一套短期测试系统是有用的和可靠的。

Detection of microcystins in environmental samples using surface plasmon resonance biosensor

An indirect inhibitive surface plasmon resonance (SPR) immunoassay was developed for the microcystins (MCs) detection. The bioconjugate of MC-LR and bovine serum albumin (BSA) was immobilized on a CM5 sensor chip. A serial premixture of MC-LR standards (or samples) and monoclonal antibody (mAb) were injected over the functional sensor surface, and the subsequent specific immunoreaction was monitored on the BIAcore 3000 biosensor and generated a signal with an increasing intensity in response to the decreasing MCs concentration. The developed SPR immunoassay has a wide quantitative range in 1-100 mu g L-1. Although not as sensitive as conventional enzyme-linked immunosorbent assay (ELISA), the SPR biosensor offered unique advantages: (I) the sensor chip could be reusable without any significant loss in its binding activity after 50 assay-regeneration cycles, (2) one single assay could be accomplished in 50 min (including 30-min preincubation and 20-min BIAcore analysis), and (3) this method did not require multiple steps. The SPR biosensor was also used to detect MCs in environmental samples, and the results compared well with those obtained by ELISA. We conclude that the SPR biosensor offers outstanding advantages for the MCs detection and may be further developed as a field-portable sensor for real-time monitoring of MCs on site in the near future. (C) 2009 Published by Elsevier B.V.

Multiplex detection of mutations in clinical isolates of rifampin-resistant Mycobacterium tuberculosis by short oligonucleotide Ligation assay on DNA chips

A new approach, short-oligonucleotide-ligation assay on DNA chip (SOLAC), is developed to detect mutations in rifampin-resistant Mycobacterium tuberculosis. The method needs only four common probes to detect 15 mutational variants of the rpoB gene within 12 h. Fifty-five rifampin-resistant M. tuberculosis isolates were analyzed, resulting in 87.3% accuracy and 83.6% concordance relative to DNA sequencing.

Fabrication and Characterization of High Power InGaN Blue-Violet Lasers with an Array Structure

InGaN/GaN multi-quantum-well-structure laser diodes with an array structure are successfully fabricated on sapphire substrates. The laser diode consists of four emitter stripes which share common electrodes on one laser chip. An 800-mu m-long cavity is formed by cleaving the substrate along the < 1 (1) over bar 00 >. orientation using laser scriber. The threshold current and voltage of the laser array diode are 2A and 10.5 V, respectively. A light output peak power of 12W under pulsed current injection at room temperature is achieved. We simulate the electric properties of GaN based laser diode in a co-planar structure and the results show that minimizing the difference of distances between the different ridges and the n-electrode and increasing the electrical conductivity of the n-type GaN are two effective ways to improve the uniformity of carrier distribution in emitter stripes. Two pairs of emitters on a chip are arranged to be located near the two n-electrode pads on the left and right sides, and the four stripe emitters can laser together. The laser diode shows two sharp peaks of light output at 408 and 409 nm above the threshold current. The full widths at half maximum for the parallel and perpendicular far field patterns are 8 degrees and 32 degrees, respectively.

Normal incidence p-i-n Ge heterojunction photodiodes on Si substrate grown by ultrahigh vacuum chemical vapor deposition

We report on normal incidence p-i-n heterojunction photodiodes operating in the near-infrared region and realized in pure germanium on planar silicon substrate. The diodes were fabricated by ultrahigh vacuum chemical vapor deposition at 600 degrees C without thermal annealing and allowing the integration with standard silicon processes. Due to the 0.14% residual tensile strain generated by the thermal expansion mismatch between Ge and Si, an efficiency enhancement of nearly 3-fold at 1.55 mu m and the absorption edge shifting to longer wavelength of about 40 nm are achieved in the epitaxial Ge films. The diode with a responsivity of 0.23 A/W at 1.55 mu m wavelength and a bulk dark current density of 10 mA/cm(2) is demonstrated. These diodes with high performances and full compatibility with the CMOS processes enable monolithically integrating microphotonics and microelectronics on the same chip.

Sub-nanosecond silicon-on-insulator optical micro-ring switch with low crosstalk

We demonstrate a sub-nanosecond electro-optical switch with low crosstalk in a silicon-on-insulator (SOI) dual-coupled micro-ring embedded with p-i-n diodes. A crosstalk of -23 dB is obtained in the 20-mu m-radius micro-ring with the well-designing asymmetric dual-coupling structure. By optimizations of the doping profiles and the fabrication processes, the sub-nanosecond switch-on/off time of < 400 ps is finally realized under an electrical pre-emphasized driving signal. This compact and fast-response micro-ring switch, which can be fabricated by complementary metal oxide semiconductor (CMOS) compatible technologies, have enormous potential in optical interconnects of multicore networks-on-chip.

Wafer-Level Testable High-Speed Silicon Microring Modulator Integrated with Grating Couplers

A wafer-level testable silicon-on-insulator-based microring modulator is demonstrated with high modulation speed, to which the grating couplers are integrated as the fiber-to-chip interfaces. Cost-efficient fabrications are realized with the help of optical structure and etching depth designs. Grating couplers and waveguides are patterned and etched together with the same slab thickness. Finally we obtain a 3-dB coupling bandwidth of about 60nm and 10 Gb/s nonreturn-to-zero modulation by wafer-level optical and electrical measurements.

A low-cost CMOS programmable temperature

A novel uncalibrated CMOS programmable temperature switch with high temperature accuracy is presented. Its threshold temperature T-th can be programmed by adjusting the ratios of width and length of the transistors. The operating principles of the temperature switch circuit is theoretically explained. A floating gate neural MOS circuit is designed to compensate automatically the threshold temperature T-th variation that results form the process tolerance. The switch circuit is implemented in a standard 0.35 mu m CMOS process. The temperature switch can be programmed to perform the switch operation at 16 different threshold temperature T(th)s from 45-120 degrees C with a 5 degrees C increment. The measurement shows a good consistency in the threshold temperatures. The chip core area is 0.04 mm(2) and power consumption is 3.1 mu A at 3.3V power supply. The advantages of the temperature switch are low power consumption, the programmable threshold temperature and the controllable hysteresis.

Fabrication of triplexers based on flattop SOI AWG

A triplexer is fabricated based on SOI arrayed waveguide gratings (AWGs). Three wavelengths of the triplexer operate at different diffraction orders of an arrayed waveguide grating. The signals of 1490 nm and 1550 nm, which are input from central input waveguide of an AWG, are demultiplexed and the signal of 1310 nm, which is input from central output waveguide of an AWG, is uploaded. The tested results show that the downloaded and uploaded signals have flat-top response. The insertion loss is 9 dB on chip, the nonadjacent crosstalk is less than -30 dB for 1490 nm and 1301 nm, and is less than -25 dB for 1550 nm, the 3 dB bandwidth equates that of the input light source.

Development of solar-blind AlGaN 128x128 ultraviolet focal plane arrays

This paper reports the development of solar-blind aluminum gallium nitride (AlGaN) 128x128 UV Focal Plane Arrays (FPAs). The back-illuminated hybrid FPA architecture consists of an 128x128 back-illuminated AlGaN PIN detector array that is bump-mounted to a matching 128x128 silicon CMOS readout integrated circuit (ROIC) chip. The 128x128 p-i-n photodiode arrays with cuton and cutoff wavelengths of 233 and 258 nm, with a sharp reduction in response to UVB (280-320 nm) light. Several examples of solar-blind images are provided. This solar-blind band FPA has much better application prospect.

High-frequency characterization of packaging network in to-can photodiode modules

A simple method for analyzing the effects of TO packaging network on the high-frequency response of photodiode modules is presented. This method is established based on the relations of the scattering parameters of the packaging network, photodiode chip, and module. It is shown that the results obtained by this method agree well with those obtained by the conventional comparison method. The proposed method is much more convenient since only the electrical domain measurements are required. (C) 2008 Wiley Periodicals, Inc.

Subtraction of scattering parameters for adiabatic intrinsic responses of semiconductor lasers

Thermal effects will make chip temperature change with bias current of semiconductor lasers, which results in inaccurate intrinsic response by the conventional subtraction method. In this article, an extended subtraction method of scattering parameters for characterizing adiabatic responses of laser diode is proposed. The pulsed injection operation is used to determine the chip temperature of packaged semiconductor laser, and an optimal injection condition is obtained by investigating the dependence of the lasing wavelength on the width and period of the injection pulse in a relatively wide temperature range. In this case, the scattering parameters of laser diode are measured on adiabatic condition and the adiabatic intrinsic responses of packaged laser diode are first extracted. It is found that the adiabatic intrinsic responses are evidently superior to those without thermal consideration. The analysis results indicate that inclusion of thermal. effects is necessary to acquire accurate intrinsic responses of semiconductor lasers. (C) 2008 Wiley Periodicals, Inc.