Investigations on oxide-free InGaAlAs waveguides grown by narrow stripe selective MOVPE

Oxide-free InGaAlAs waveguides have been grown on the InP substrates patterned with pairs of SiO2 mask stripes using narrow stripe selective MOVPE. The mask stripe width is varied from 0 to 40 pm, while the window region width between a pair of mask stripes is fixed at 1.5, 2.5 and 3.5 mu m, respectively. Smooth surface s and flat interfaces are obtained in the selectively grown InQaAlAs waveguides. There exhibit strong dependences of the thickness enhancement ratio and the photoluminescence (PL) spectrum on the mask stripe width and the window region width for the InGaAlAs wavegwdes. A large PL peak wavelength shift of 79 nm and a PL full width of at half maximum (FWHM) of less than 64 meV are obtained simultaneously. Some possible interpretations for our investigations are presented by considering both the migration effect from a masked region (MMR) and the lateral vapor diffusion effect (LVD).

Growth mechanism of InGaAlAs waveguides by narrow stripe selective MOVPE

Growth mechanism of InGaAlAs waveguides by narrow stripe selective MOVPE has been studied. Both the InGaAlAs bulk waveguides and the InGaAlAs MQW waveguides were successful grown on the patterned substrates at optimized growth conditions. The mask stripe width varied from 0 to 40 mu m, while the window region width between a pair of mask stripes was fixed 2.5 mu m. These selectively grown waveguides were covered by specific InP layers, which can keep the InGaAlAs waveguides from being oxidized during the fabrication of devices. In particular, there exhibit strong dependences of the photoluminescence (PL) spectrum on the mask stripe width for the samples. The results were explained in considering both the migration effect from a masked region (MMR) and the lateral vapor diffusion effect (LVD).

Anomalous shift of the beating nodes in illumination-controlled In1-xGaxAs/In1-yAlyAs two-dimensional electron gases with strong spin-orbit interaction

The beating patterns in the Shubnikov-de Haas oscillatory magnetoresistance originating from zero-field spin splitting of two-dimensional electron gases (2DEGs) in In0.52Al0.48As/InxGa1-xAs/In0.52Al0.48As quantum wells with silicon delta doped on the upper barrier layer have been investigated by means of magnetotransport measurements before and after illumination. Contrary to the expectation, after each illumination, the beating nodes induced by the zero-field spin-splitting effect shift to lower and lower magnetic field due to the decrease in the zero-field spin-splitting energy of the 2DEGs. The anomalous phenomenon of the shift of the beating nodes and the decrease in spin-orbit coupling constants after illumination cannot be explained by utilizing the previous linear Rashba model. It is suggested that the decrease in the zero-field spin-splitting energy and the spin-orbit coupling constant arise from the nonlinear Rashba spin splitting.

Strong circular photogalvanic effect in ZnO epitaxial films

We report a strong circular photogalvanic effect (CPGE) in ZnO epitaxial films under interband excitation. It is observed that CPGE current is as large as 100 nA/W in ZnO, which is about one order in magnitude higher than that in InN film while the CPGE currents in GaN films are not detectable. The possible reasons for the above observations are the strong spin orbit coupling in ZnO or the inversed valence band structure of ZnO.

The methane hydrate formation and the resource estimate resulting from free gas migration in seeping seafloor hydrate stability zone

It is a typical multiphase flow process for hydrate formation in seeping seafloor sediments. Free gas can not only be present but also take part in formation of hydrate. The volume fraction of free gas in local pore of hydrate stable zone (HSZ) influences the formation of hydrate in seeping seafloor area, and methane flux determines the abundance and resource of hydrate-bearing reservoirs. In this paper, a multiphase flow model including water (dissolved methane and salt)-free gas hydrate has been established to describe this kind of flow-transfer-reaction process where there exists a large scale of free gas migration and transform in seafloor pore. In the order of three different scenarios, the conversions among permeability, capillary pressure, phase saturations and salinity along with the formation of hydrate have been deducted. Furthermore, the influence of four sorts of free gas saturations and three classes of methane fluxes on hydrate formation and the resource has also been analyzed and compared. Based on the rules drawn from the simulation, and combined information gotten from drills in field, the methane hydrate(MH) formation in Shenhu area of South China Sea has been forecasted. It has been speculated that there may breed a moderate methane flux below this seafloor HSZ. If the flux is about 0.5 kg m-2 a-1, then it will go on to evolve about 2700 ka until the hydrate saturation in pore will arrive its peak (about 75%). Approximately 1.47 109 m3 MH has been reckoned in this marine basin finally, is about 13 times over preliminary estimate.

Magnetoexcitonic optical absorption in semiconductors under strong magnetic fields and intense terahertz radiation in the Voigt configuration

The magnetoexcitonic optical absorption of a GaAs bulk semiconductor driven by a terahertz (THz) field is investigated numerically. The method of the solution of the initial-value problem, in combination with the perfect matched layer technique, is used to calculate the optical susceptibility, with Coulomb interaction, Landau quantization, and THz fields involved nonperturbatively. It shows that there appear replicas and sidebands of magnetoexciton of different Landau levels, which greatly enrich the magneto-optical spectrum in the presence of a driving THz field. Copyright (C) EPLA, 2008.

RECRYSTALLIZATION, IMPURITY MIGRATION AND OPTICAL ACTIVATION OF YB-IMPLANTED SILICON INDUCED BY RAPID THERMAL ANNEALING

The rapid thermal annealing temperature dependence of the recrystallization, Yb migration and its optical activation were studied for Yb-implanted silicon. For the annealing regime 800-1000-degrees-C, the Yb segregates both at the crystal/amorphous interface and at the surface, which is different from the usual segregation of Er at the crystal/amorphous interface, and the efficiency of optical activation also increases with annealing temperature. However, the amorphous layer regrows completely and no photoluminescence is observed after the annealing at 1200-degrees-C.