陕北黄土区陡坡地人工植被的土壤水分生态环境

通过定点土壤水分测定与对比分析,研究了陕北黄土区35~45°陡坡地人工植被的土壤水分亏缺状况、年际、年内动态变化规律、干燥化特征及其补偿恢复特征。结果表明:陡坡地多年生人工植被的土壤水分亏缺极为严重,贫水年0~10m土层贮水量仅相当于田间持水量的26.2%~42.0%,丰水年贮水量也仅占田间持水量的27.0%~43.3%;亏缺次序为:柠条>刺槐>苜蓿>侧柏>杨树>油松>荒坡>杏>枣>农地。年际间同一植被土壤水分含量的变化主要发生在200 cm以上土层内,变异程度随土壤深度的增加而减弱。同一生长季,各种植被0~120 cm土层含水量的变异系数都较大,但植被间差异较小;120 cm以下土层,变异系数较小,但植被间差异较大。陡坡地多年生植被均有永久干层存在,但深层土壤干燥化强度因植物种类和生长年限而存在明显的差异。雨季土壤水分的补偿和恢复深度为1.0~1.4m,但不同植被的土壤贮水增量和补偿度有较大差异。同一植被丰水年的雨水补偿深度比干旱年可增加60 cm以上,5m土层贮水增量增加3倍以上。在自然降雨条件下,陡坡地多年生人工植被的土壤贮水亏缺状况不能得到改善,土壤干化现象也不可能有所缓解。

中国沙棘、俄罗斯沙棘和俄罗斯沙棘×中国沙棘光合特性及影响因子

在陕北黄土丘陵沟壑区用LI-6400光合仪对中国沙棘、俄罗斯沙棘和俄罗斯沙棘×中国沙棘光合特性及影响因子进行了测定。测定结果表明三者的光合速率、气孔导度、胞间CO2浓度、蒸腾速率日变化均为"双峰"曲线。中国沙棘光合"午休"现象较轻,日光合速率和午后光合速率、气孔导度、胞间CO2浓度、蒸腾速率极显著(p<0.01)高于俄罗斯沙棘和俄罗斯沙棘×中国沙棘。中国沙棘光合作用最适气孔导度、大气CO2浓度、空气相对湿度比俄罗斯沙棘小,最适胞间CO2浓度、蒸腾速率、气温、光合有效辐射比俄罗斯沙棘高。中国沙棘在最适气孔导度、胞间CO2浓度、蒸腾速率和大气CO2浓度下的光合速率比俄罗斯沙棘高;在最适气温、空气相对湿度、光合有效辐射下的光合速率比俄罗斯沙棘低。俄罗斯沙棘×中国沙棘光合"午休"现象比中国沙棘强,比俄罗斯沙棘弱,午后光合速率与俄罗斯沙棘相近;俄罗斯沙棘×中国沙棘最适气孔导度、大气CO2浓度高于中国沙棘和俄罗斯沙棘,最适胞间CO2浓度低于中国沙棘和俄罗斯沙棘,最适蒸腾速率、气温、空气相对湿度、光合有效辐射居于中国沙棘和俄罗斯沙棘之间。俄罗斯沙棘×中国沙棘在最适气孔导度下的光合速率高于中国沙棘和俄罗斯沙棘;在最适胞间CO...

Temperature dependence of photoluminescence of flat and undulated SiGe/Si multiple quantum wells

Photoluminescence (PL) of strained SiGe/Si multiple quantum wells (MQW) with flat and undulated SiGe well layers was studied at different temperature. With elevated temperature from 10K, the no-phonon (NP) peak of the SiGe layers in the flat sample has firstly a blue shift due to the dominant transition converting from bound excitons (BE) to free excitons (FE), and then has a red shift when the temperature is higher than 30K because of the narrowing of the band gap. In the undulated sample, however, monotonous blue shift was observed as the temperature was elevated from 10 K to 287 K. The thermally activated electrons, confined in Si due to type-II band alignment, leak into the SiGe crest regions, and the leakage is enhanced with the elevated temperature. It results in a blue shift of the SiGe luminescence spectra.

Type-II SiGe/Si MQWS (multi-quantum wells) and self-organized Ge/Si islands grown by UHV/CVD system

Type-II SiGe/Si MQWs (Multi-Quantum Wells) and Self-Organized Ge/Si Islands were successfully grown by a homemade ultra-high vacuum/chemical vapor deposition (UHV/CVD) system. Growth characteristics and PL (photoluminescence) spectra at different temperature were measured. It demonstrated that some accumulation of carriers in the islands results in the increase of the integrated PL intensity of island-related at a certain temperature range.

Correlation between Er3+ emission and the microstructure of a-SiOx : H < Er > films

Photoluminescence (PL) from Er-implanted hydrogenated amorphous silicon suboxide (a-SiOX:H(x<2.0)) films was measured. Two luminescence bands with maxima at lambda congruent to 750 nm and lambda congruent to 1.54mum, ascribed to the a-SiOX:H intrinsic emission and Er3+ emission, were observed. Peak intensities of the two bands follow the same trend as a function of annealing temperature from 300 to 1000degreesC. Micro-Raman results indicate that the a-SiOX:H films are a mixture of two phases, an amorphous SiOX matrix and amorphous silicon (a-Si) domains embedded there in. FTIR spectra confirm that hydrogen effusion from a-SiOX:H films occurs during annealing. Hydrogen effusion leads to a reconstruction of the microstructure of a-Si domains, thus having a strong influence on Er3+ emission. Our study emphasizes the role of a-Si domains on Er3+ emission in a-SiOX:H films.

Heteroepitaxial growth of novel SOI material Si/gamma-Al2O3/Si

In this paper, we report the fabrication of Si-based double hetero-epitaxial SOI materials Si/gamma-Al2O3/Si. First, single crystalline gamma-Al2O3 (100) insulator films were grown epitaxially on Si(100) by LPCVD, and then, Si(100) epitaxial films were grown on gamma-Al2O3 (100)/Si(100) epi-substrates using a CVD method similar to silicon on sapphire (SOS) epitaxial growth. The Si/gamma-Al2O3 (100)/Si(100) SOI materials are characterized in detail by RHEED, XRD and AES techniques. The results demonstrate that the device-quality novel SOI materials Si/gamma-Al2O3 (100)/Si(100) has been fabricated successfully and can be used for application of MOS device.

Simulation and fabrication of thermo-optic variable optical attenuators based on multimode interference coupler

A type of thermo-optic variable optical attenuator based on multimode interference coupler is proposed. The optical field propagation properties of the devices are simulated using finite difference beam propagation method. The propagation loss of the fabricated device is 2-4.2 dB at the wavelength range 1510-1610 nm. The total power consumption is 370 mW and the maximum attenuation is more than 25 dB, which almost can meet the requirements of optical fiber communication systems.

Heteroepitaxial growth and annealing of gamma-Al2O3 thin films on silicon

The gamma-Al2O3 films were grown on Si (100) substrates using the sources of TMA (Al (CH3)(3)) and O-2 by very low-pressure chemical vapor deposition (VLP-CVD). It has been found that the gamma-Al2O3 film has a mirror-like surface and the RMS was about 2.5nm. And the orientation relationship was gamma-Al2O3(100)/Si(100). The thickness uniformity of gamma-Al2O3 films for 2-inch epi-wafer was less than 5%. The X-ray diffraction (XRD) and reflection high-energy electron diffraction (RHEED) results show that the crystalline quality of the film was improved after the film was annealed at 1000degreesC in O-2 atmosphere. The high-frequency C-V and leakage current of Al/gamma-Al2O3/Si capacitor were also measured to verify the annealing effect of the film. The results show that the dielectric constant increased from 4 to 7 and the breakdown voltage for 65-nm-thick gamma-Al2O3 film on silicon increases from 17V to 53V.

Study on optical band gap of boron-doped nc-Si : H film

The optical band gap (E-g) of the boron (B)-doped hydrogenated nano-crystalline silicon (nc-Si:H) films fabricated using plasma enhanced chemical vapor deposition (PECVD) was investigated in this work. The transmittance of the films were measured by spectrophotometric and the E-g was evaluated utilizing three different relations for comparison, namely: alphahnu=C(hnu-E-g)(3), alphahnu=B-0(hnu-E-g)(2), alphahnu=C-0(hnu-E-g)(2). Result showed that E-g decreases with the increasing of Boron doping ratio, hydrogen concentration, and substrate's temperature (T-s), respectively. E-g raises up with rf power density (P-d) from 0.45W.cm(-2) to 0.60w.cm(-2) and then drops to the end. These can be explained for E-g decreases with disorder in the films.

Symmetry in the diagonal self-assembled InAs quantum wire arrays on InP substrate

Diagonal self-assembled InAs quantum wire (QWR) arrays with the stacked InAs/In0.52Al0.48As structure are grown on InP substrates, which are (001)-oriented and misoriented by 6degrees towards the [100] direction. Both the molecular beam epitaxy (MBE) and migration enhanced epitaxy (MEE) techniques are employed. Transmission electron microscopy reveals that whether a diagonal InAs QWR array of the stacked InAs/InAlAs is symmetrical about the growth direction or not depends on the growth method as well as substrate orientation. Asymmetry in the diagonal MEE-grown InAs QWR array can be ascribed to the influence of surface reconstruction on upward migration of adatoms during the self-assembly of the InAs quantum wires.

Exploration on enhancing innovation capability of functional information materials in China

The present status and future prospects of functional information materials, mainly focusing on semiconductor microstructural materials, are introduced first in this paper. Then a brief discussion how to enhance the academic level and innovation capability of research and development of functional information materials in China are made. Finally the main problems concerning the studies of materials science and technology are analyzed, and possible measures for promoting its development are proposed.

Relationship between load/unload response ratio and damage variable and its application

The physics-based parameter: load/unload response ratio (LURR) was proposed to measure the proximity of a strong earthquake, which achieved good results in earthquake prediction. As LURR can be used to describe the damage degree of the focal media qualitatively, there must be a relationship between LURR and damage variable (D) which describes damaged materials quantitatively in damage mechanics. Hence, based on damage mechanics and LURR theory, taking Weibull distribution as the probability distribution function, the relationship between LURR and D is set up and analyzed. This relationship directs LURR applied in damage analysis of materials quantitatively from being qualitative earlier, which not only provides the LURR method with a more solid basis in physics, but may also give a new approach to the damage evaluation of big scale structures and prediction of engineering catastrophic failure. Copyright (c) 2009 John Wiley & Sons, Ltd.

Study on the forecast effects of PI method to the north and southwest China

In this paper, the codes of Pattern Informatics (PI) method put forward by Rundle et al. have been worked out according to their algorithm published, and the retrospective forecast of PI method to North China (28.0 degrees-42.0 degrees N, 108.0 degrees-125.0 degrees E) and to Southwest China (22.0 degrees-28.3 degrees N, 98.0 degrees-106.0 degrees E) has been tested. The results show that the hit rates in different regions show a great difference. In Southwest China, 32 earthquakes with M(L)5.0 or larger have occurred during the predicted time period 2000-2007, and 26 out of the 32 earthquakes occurred in or near the hot spots. In North China, the total number of M(L)5.0 or larger was 12 during the predicted time period 2000-2007, and only 3 out of the 12 earthquakes occurred in or near the hot spots. From our results, we hold that if the PI method could be applied to all kinds of regions, the parameters associated with time points and time windows should be chosen carefully to obtain the higher hit rate. We also found that the aftershocks in a strong earthquake sequence affect the PI results obviously. Copyright (c) 2009 John Wiley & Sons, Ltd.

中国大陆活动地块边界带强震趋势研究

已有研究表明,中国大陆活动地块边界带是我国大陆强震的主体带和集中区,因此有必要对各边界带开展强震危险性的跟踪分析。本文分别从加卸载响应比时序演化特征、基于对数正态分布的概率方法和b值变化特征3个方面对各边界带未来强震趋势进行了分析;并分别根据加卸载响应比时序演化特征、综合累积概率与条件概率、b值下降判断了各边界带未来发生强震的危险程度。最后,根据3种方法的分析结果,探讨了中国大陆未来5年发生强震的可能区域。

Relationship between load/unload response ratio and damage variable and its application

The physics-based parameter: load/unload response ratio (LURR) was proposed to measure the proximity of a strong earthquake, which achieved good results in earthquake prediction. As LURR can be used to describe the damage degree of the focal media qualitatively, there must be a relationship between LURR and damage variable (D) which describes damaged materials quantitatively in damage mechanics. Hence, based on damage mechanics and LURR theory, taking Weibull distribution as the probability distribution function, the relationship between LURR and D is set up and analyzed. This relationship directs LURR applied in damage analysis of materials quantitatively from being qualitative earlier, which not only provides the LURR method with a more solid basis in physics, but may also give a new approach to the damage evaluation of big scale structures and prediction of engineering catastrophic failure. Copyright (c) 2009 John Wiley & Sons, Ltd.