The magnetic and structure properties of room-temperature ferromagnetic semiconductor (Ga,Mn)N

Diluted magnetic semiconductor (Ga,Mn)N were prepared by the implantation of Mn ions into GaN/Al2O3 substrate. Clear X-ray diffraction peak from (Ga,Mn)N is observed. It indicates that the solid solution (Ga,Mn)N phase was formed with the same lattice structure as GaN and different lattice constant. Magnetic hysteresis-loops of the (Ga,Mn)N were obtained at room temperature (293 K) with the coercivity of about 2496.97 A m(-1). (C) 2003 Elsevier B.V. All rights reserved.

Diamond nucleation by energetic pure carbon bombardment

Deposition of 1000 eV pure carbon ions onto Si(001) held at 800 degrees C led to direct nucleation of diamond crystallites, as proven by high-resolution transmission electron microscopy and electron energy loss spectroscopy. Molecular dynamic simulations show that diamond nucleation in the absence of hydrogen can occur by precipitation of diamond clusters in a dense amorphous carbon matrix generated by subplantation. Once the diamond clusters are formed, they can grow by thermal annealing consuming carbon atoms from the amorphous matrix. The results are applicable to other materials as well.

Growth and photoluminescence of epitaxial CeO2 film on Si (111) substrate

A CeO2 film with a thickness of about 80nm was deposited by a mass-analysed low-energy dual ion beam deposition technique on an Si(111) substrate. Reflection high-energy electron diffraction and x-ray diffraction measurements showed that the film is a single crystal. The tetravalent state of Ce in the film was confirmed by x-ray photoelectron spectroscopy measurements, indicating that stoichiometric CeO2 was formed. Violet/blue light emission (379.5 nm) was observed at room temperature, which may be tentatively explained by charge transitions from the 4f band to the valence band of CeO2.

Laser-induced damage threshold of ZrO2 thin films prepared at different oxygen partial pressures by electron-beam evaporation

ZrO2, films were deposited by electron-beam evaporation with the oxygen partial pressure varying from 3 X 10(-3) Pa to I I X 10(-3) Pa. The phase structure of the samples was characterized by x-ray diffraction (XRD). The thermal absorption of the films was measured by the surface thermal lensing technique. A spectrophotometer was employed to measure the refractive indices of the samples. The laser-induced damage threshold (LIDT) was assessed using a 1064, nm Nd: yttritium-aluminium-garnet pulsed laser at pulse width of 12 ns. The influence of oxygen partial pressure on the microstructure and LIDT of ZrO2 films was investigated. XRD data revealed that the films changed from polycrystalline to amorphous as the oxygen partial pressure increased. The variation of refractive index at 550 nm wavelength indicated that the packing density of the films decreased gradually with increasing oxygen partial pressure. The absorptance of the samples decreased monotonically from 125.2 to 84.5 ppm with increasing oxygen partial pressure. The damage threshold, values increased from 18.5 to 26.7 J/cm(2) for oxygen partial pressures varying from 3 X 10(-3) Pa to 9 X 10(-3) Pa, but decreased to 17.3 J/cm(2) in the case of I I X 10(-3) Pa. (C) 2005 American Vacuum Society.

Laser-induced damage threshold of ZrO2 thin films prepared at different oxygen partial pressures by electron-beam evaporation

ZrO2, films were deposited by electron-beam evaporation with the oxygen partial pressure varying from 3 X 10(-3) Pa to I I X 10(-3) Pa. The phase structure of the samples was characterized by x-ray diffraction (XRD). The thermal absorption of the films was measured by the surface thermal lensing technique. A spectrophotometer was employed to measure the refractive indices of the samples. The laser-induced damage threshold (LIDT) was assessed using a 1064, nm Nd: yttritium-aluminium-garnet pulsed laser at pulse width of 12 ns. The influence of oxygen partial pressure on the microstructure and LIDT of ZrO2 films was investigated. XRD data revealed that the films changed from polycrystalline to amorphous as the oxygen partial pressure increased. The variation of refractive index at 550 nm wavelength indicated that the packing density of the films decreased gradually with increasing oxygen partial pressure. The absorptance of the samples decreased monotonically from 125.2 to 84.5 ppm with increasing oxygen partial pressure. The damage threshold, values increased from 18.5 to 26.7 J/cm(2) for oxygen partial pressures varying from 3 X 10(-3) Pa to 9 X 10(-3) Pa, but decreased to 17.3 J/cm(2) in the case of I I X 10(-3) Pa. (C) 2005 American Vacuum Society.

Influence of deposition conditions on the microstructure of oxides thin films

Thin films of ZrO2, HfO2 and TiO2 were deposited on kinds of substrates by electron beam evaporation (EB), ion assisted deposition (IAD) and dual ion beam sputtering (DIBS). Then some of them were annealed at different temperatures. X-ray diffraction (XRD) was applied to determine the crystalline phase and the grain size of these films, and the results revealed that their microstructures strongly depended on the deposition conditions such as substrate, deposition temperature, deposition method and annealing temperature. Theory of crystal growth and migratory diffusion were applied to explain the difference of crystalline structures between these thin films deposited and treated under various conditions. (c) 2007 Elsevier B.V. All rights reserved.

Nucleation of diamond by pure carbon ion bombardment - a transmission electron microscopy study

A cross-sectional high-resolution transmission electron microscopy (HRTEM) study of a film deposited by a 1 keV mass-selected carbon ion beam onto silicon held at 800 degrees C is presented. Initially, a graphitic film with its basal planes perpendicular to the substrate is evolving. The precipitation of nanodiamond crystallites in upper layers is confirmed by HRTEM, selected area electron diffraction, and electron energy loss spectroscopy. The nucleation of diamond on graphitic edges as predicted by Lambrecht [W. R. L. Lambrecht, C. H. Lee, B. Segall, J. C. Angus, Z. Li, and M. Sunkara, Nature, 364 607 (1993)] is experimentally confirmed. The results are discussed in terms of our recent subplantation-based diamond nucleation model. (c) 2005 American Institute of Physics.

Effects of crystalline quality on the phase stability of cubic boron nitride thin films under medium-energy ion irradiation

To investigate the effect of radiation damage on the stability and the compressive stress of cubic boron nitride (c-BN) thin films, c-BN films with various crystalline qualities prepared by dual beam ion assisted deposition were irradiated at room temperature with 300 keV Ar+ ions over a large fluence range up to 2 x 10(16) cm(-2). Fourier transform infrared spectroscopy (FTIR) data were taken before and after each irradiation step. The results show that the c-BN films with high crystallinity are significantly more resistant against medium-energy bombardment than those of lower crystalline quality. However, even for pure c-BN films without any sp(2)-bonded BN, there is a mechanism present, which causes the transformation from pure c-BN to h-BN or to an amorphous BN phase. Additional high resolution transmission electron microscopy (HRTEM) results support the conclusion from the FTIR data. For c-BN films with thickness smaller than the projected range of the bombarding Ar ions, complete stress relaxation was found for ion fluences approaching 4 x 10(15) cm(-2). This relaxation is accompanied, however, by a significant increase of the width of c-BN FTIR TO-line. This observation points to a build-up of disorder and/or a decreasing average grain size due to the bombardment. (c) 2005 Elsevier B.V. All rights reserved.

Development of an intermediate energy heavy-ion micro-beam irradiation system

The micro-beam irradiation system, which focuses the beam down to micron order and precisely delivers a predefined number of ions to a predefined spot of micron order, is a powerful tool for radio-biology, radio-biomedicine and micromachining. The Institute of Modern Physics of Chinese Academy of Sciences is developing a heavy-ion microbeam irradiation system up to intermediate energy. Based on the intermediate and low energy beam provided by Heavy Ion Research Facility of Lanzhou, the micro-beam system takes the form of the magnetic focusing. The heavy-ion beam is conducted to the basement by a symmetrical achromatic system consisting of two vertical bending magnets and a quadrupole in between. Then a beam spot of micron order is formed by a magnetic triplet quadrupole of very high gradient. The sample can be irradiated either in vacuum or in the air. This system will be the first opening platform capable of providing heavy ion micro-beam, ranging from low (10MeV/u) to intermediate energy (100MeV/u), for irradiation experiment with positioning and counting accuracy. Target material may be biology cell, tissue or other non-biological materials. It will be a help for unveiling the essence of heavy-ion interaction with matter and also a new means for exploring the application of heavy-ion irradiation.

Conformal irradiation to moving targets in heavy ion radiotherapy with raster-scanning beam delivery system: (II) feasibility experiments

Within the framework of the pilot heavy-ion therapy facility at GSI equipped with an active beam delivery system of advanced raster scanning technique, a feasibility study on actively conformal heavy-ion irradiation to moving tumors has been experimentally conducted. Laterally, real-time corrections to the beam scanning parameters by the raster scanner, leading to an active beam tracing, compensate for the lateral motion of a target volume. Longitudinally, a mechanically driven wedge energy degrader (called depth scanner) is applied to adjust the beam energy so as to locate the high-dose Bragg peak of heavy ion beam to the slice under treatment for the moving target volume. It has been experimentally shown that compensations for lateral target motion by the raster scanner and longitudinal target shift by the depth scanner are feasible.

Intense beam production of highly charged heavy ions by the superconducting electron cyclotron resonance ion source SECRAL (invited)

There has been increasing demand to provide higher beam intensity and high enough beam energy for heavy ion accelerator and some other applications, which has driven electron cyclotron resonance (ECR) ion source to produce higher charge state ions with higher beam intensity. One of development trends for highly charged ECR ion source is to build new generation ECR sources by utilization of superconducting magnet technology. SECRAL (superconducting ECR ion source with advanced design in Lanzhou) was successfully built to produce intense beams of highly charged ion for Heavy Ion Research Facility in Lanzhou (HIRFL). The ion source has been optimized to be operated at 28 GHz for its maximum performance. The superconducting magnet confinement configuration of the ion source consists of three axial solenoid coils and six sextupole coils with a cold iron structure as field booster and clamping. An innovative design of SECRAL is that the three axial solenoid coils are located inside of the sextupole bore in order to reduce the interaction forces between the sextupole coils and the solenoid coils. For 28 GHz operation, the magnet assembly can produce peak mirror fields on axis of 3.6 T at injection, 2.2 T at extraction, and a radial sextupole field of 2.0 T at plasma chamber wall. During the commissioning phase at 18 GHz with a stainless steel chamber, tests with various gases and some metals have been conducted with microwave power less than 3.5 kW by two 18 GHz rf generators. It demonstrates the performance is very promising. Some record ion beam intensities have been produced, for instance, 810 e mu A of O7+, 505 e mu A of Xe20+ 306 e mu A of Xe27+, and so on. The effect of the magnetic field configuration on the ion source performance has been studied experimentally. SECRAL has been put into operation to provide highly charged ion beams for HIRFL facility since May 2007.

Low-loss planar and stripe waveguides in Nd3+-doped silicate glass produced by oxygen-ion implantation

We report on the fabrication and characterization of low-loss planar and stripe waveguides in a Nd3+-doped glass by 6 MeV oxygen-ion implantation at a dose of 1x10(15) ions/cm(2). The dark mode spectroscopy of the planar waveguide was measured using a prism coupling arrangement. The refractive index profile of the planar waveguide was reconstructed from a code based on the reflectivity calculation method. The results indicate that a refractive index enhanced region as well as an optical barrier have been created after the ion beam processing. The near-field mode profiles of the stripe waveguide were obtained by an end-fire coupling arrangement, by which three quasitransverse electric modes were observed. After annealing, the propagation losses of the planar and stripe waveguides were reduced to be similar to 0.5 and similar to 1.8 dB/cm, respectively. (c) 2007 American Institute of Physics.

离子辅助沉积中离子束流密度的作用

测量了End-Hall离子源在不同条件下的离子束流密度，在不同离子束流密度下进行了心离子辅助沉积ZrO2薄膜的实验，研究了离子束流密度对薄膜折射率、晶相的影响．根据动量传递模型分析了离子束流密度对薄膜折射率的作用；根据热尖峰理论证明了一定条件下离子束流密度不会影响薄膜晶体结构。

Control of polarization for a broadband dichroic filter at 45 degrees incidence

A method for the control of polarization for a broadband dichroic filter was reported and some design examples were elaborated. This method could be applied over a wide range of wavelengths and a wide range of polarizations in the transmission region. A nonpolaiizing broadband dichroic filter and a broadband dichroic filter with certain polarization were designed and fabricated by electron beam evaporation with ion beam assisted deposition. The experimental spectral performances showed good agreement with their theoretical curves. In addition, the application of the method was discussed. (c) 2007 Optical Society of America