Growth and photoluminescence of epitaxial CeO2 film on Si (111) substrate
Data(s) |
2001
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Resumo |
A CeO2 film with a thickness of about 80nm was deposited by a mass-analysed low-energy dual ion beam deposition technique on an Si(111) substrate. Reflection high-energy electron diffraction and x-ray diffraction measurements showed that the film is a single crystal. The tetravalent state of Ce in the film was confirmed by x-ray photoelectron spectroscopy measurements, indicating that stoichiometric CeO2 was formed. Violet/blue light emission (379.5 nm) was observed at room temperature, which may be tentatively explained by charge transitions from the 4f band to the valence band of CeO2. |
Identificador | |
Idioma(s) |
英语 |
Fonte |
Gao F; Li GH; Zhang JH; Qin FG; Yao ZY; Liu ZK; Wang ZG; Lin LY .Growth and photoluminescence of epitaxial CeO2 film on Si (111) substrate ,CHINESE PHYSICS LETTERS,2001 ,18(3):443-444 |
Palavras-Chave | #半导体物理 #OPTICAL-PROPERTIES #THIN-FILMS #DEPOSITION #EMISSION #LAYERS |
Tipo |
期刊论文 |