A surface kinetics model for the growth of Si1-xGex by UHV/CVD using SiH4/CeH4

The surface reaction mechanism of Si1-xGex/Si growth using SiH4 and GeH4 in UHV/CVD system was studied. The saturated adsorption and desorption of SiH4 from Si(1 0 0) surface was investigated with the help of TPD and RHEED, and it was found that all the 4 hydrogen atoms of one SiH4 molecule were adsorbed to the Si surface, which meant that the dissociated adsorption ratio was proportional to 4 power of surface vacancies. The analysis of the reaction of GeH4 was also done. A new surface reaction kinetic model on Si1-xGex/Si epitaxial growth under UHV conditions by SiH4/GeH4 was proposed based on these studies. The predictions of the model were verified by the experimental results. (C) 2000 Elsevier Science B.V. All rights reserved.

Kinetic modeling of N incorporation in GaInNAs growth by plasma-assisted molecular-beam epitaxy

We have studied the growth of GaInNAs by a plasma-assisted molecular-beam epitaxy (MBE). It was found that the N-radicals were incorporated into the epitaxial layer like dopant atoms. In the range of 400-500 degrees C, the growth temperature (T-g) mainly affected the crystal quality of GaInNAs rather than the N concentration. The N concentration dropped rapidly when T-g exceeded 500 degrees C. Considering N desorption alone is insufficient to account for the strong falloff of the N concentration with T-g over 500 degrees C, the effect of thermally-activated N surface segregation must be taken into account. The N concentration was independent of the arsenic pressure and the In concentration in GaInNAs layers, but inversely proportional to the growth rate. Based on the experimental results, a kinetic model including N desorption and surface segregation was developed to analyze quantitatively the N incorporation in MBE growth. (C) 2000 American Institute of Physics. [S0003-6951(00)00928-1].

Low-temperature growth properties of Si1-xGex by disilane and solid-Ge molecular beam epitaxy

Low temperature (similar to 500 degrees C) growth properties of Si1-xGex by disilane and solid-Ge molecular beam epitaxy have been studied with an emphasis on surface morphology and growth kinetics. It is found that low-temperature growth(<500 degrees C) is in layer-by-layer mode and atomically-smooth surfaces have been obtained in as-grown samples with large Ge composition (>0.5). Ge composition dependence on substrate temperature, Ge cell temperature and disilane flow rate have been investigated. It is found that in low-temperature growth (less than or equal to 500 degrees C) and under large disilane flux, Ge composition increases with the increase of Ge flux and further increase of Ge flux leads to the saturation of Ge composition. Similar compositional dependence has been found at different growth temperatures. The saturated composition increases with the decrease of substrate temperature. The results can be explained if H desorption is assumed to occur from both Si and Ge monohydrides without diffusional exchange and the presence of Ge enhances H desorption on a Si site. (C) 1998 Elsevier Science B.V. All rights reserved.

Substrate temperature dependence of ZnTe epilayers grown on GaAs(001) by molecular beam epitaxy

ZnTe thin films have been grown on GaAs(0 0 1) substrates at different temperatures with constant Zn and Te beam equivalent pressures (BEPs) by molecular beam epitaxy (MBE). In situ reflection high-energy electron diffraction (RHEED) observation indicates that two-dimensional (2D) growth mode can be established after around one-minute three-dimensional (3D) nucleation by increasing the substrate temperature to 340 degrees C. We found that Zn desorption from the ZnTe surface is much greater than that of Te at higher temperatures, and estimated the Zn sticking coefficient by the evolution of growth rate. The Zn sticking coefficient decreases from 0.93 to 0.58 as the temperature is elevated from 320 to 400 degrees C. The ZnTe epilayer grown at 360 degrees C displays the narrowest full-width at half-maximum (FWHM) of 660 arcsec from (0 0 4) reflection in double-crystal X-ray rocking curve (DCXRC) measurements. The surface morphology of ZnTe epilayers is strongly dependent on the substrate temperature, and the root-mean-square (RMS) roughness diminishes drastically with the increase in temperature.

板栗壳对水中Cu~(2+)吸附性能的研究

研究食品加工剩余物板栗壳对水中Cu2+的吸附性能,为其用于含铜废水的处理提供理论依据。【方法】研究吸附质溶液pH、Cu2+质量浓度、吸附剂用量、粒径、吸附温度和时间对板栗壳吸附Cu2+效果的影响,探讨吸剂和吸附剂循环利用次数对解吸和再生的影响;并采用穿透曲线和洗脱曲线对动态吸附进行了分析。【结果】吸附质溶液pH值为6、Cu2+起始质量浓度为20 mg/L、吸附剂粒径为0.25 mm时的吸附效果较好,该吸附为放热过程,升高温度虽然可以加快吸附进程,但却降低了吸附量和去除率。Na+和Ca2+对Cu2+的解吸置换能力较弱,0.1mol/L HCl可使96.1%的Cu2+得以解吸回收。通过Thomas模型预测,在固定床柱吸附条件下饱和吸附量为10.94mg/g。【结论】板栗壳对水中Cu2+的吸附性能较好,因而具有很好的应用前景。

MALDI-TOF质谱技术在高聚物分析中的应用及新基质的筛选

利用MALDI-TOF质谱研究了非极性高聚物PS，通过此研究获得了PS的分子量、分子量分布和重复单元等信息。同时利用同位素分析和PSD-MALDI-TOF质谱证明了[M+Ag3]+的存在。并在此基础上，推断出了PS的端基结构信息，这在大分子高聚物端基分析方面尚属首次。 利用MALDI-TOF质谱研究了MALDI条件下四种黄酮类化合物在银簇合离子形成过程中的作用以及影响。结果表明，有机物中对紫外区激光有较强吸收的不饱和结构、影响有机物离子化的基团以及影响π-d共轭的空间位阻效应的基团都是影响银簇合离子形成的重要因素。 利用MALDI-TOF质谱结合PSD-MALDI-TOF碎片信息对两嵌段共聚物MPEG-PCL进行了研究。准确地分析了嵌段共聚物的嵌段长度和嵌段分布情况，为更好地认识和应用这类嵌段共聚物提供了重要的依据，同时也建立了分析这类嵌段共聚物的方法。 利用MALDI-TOF 质谱对具有特异物化性能的共聚物—超支化聚酯酰胺进行了研究。通过对质谱结果的分析，揭示了聚合过程中出现的多种现象及产生这些现象的原因，这对优化此类超支化聚酯酰胺的反应条件有着非常重要的意义。 结合基质的应用现状和作为基质应具备的条件，对六种含有酚羟基的弱酸性黄酮类化合物进行了筛选研究。讨论了它们成为基质的可能性以及它们在MALDI-TOF质谱实验中的应用表现，确定了其中四种黄酮类化合物可以作为有效的基质。 总结了MALDI-TOF质谱分析特殊样品的思路与经验，有些种类的样品是首次得到成功地分析。这对从事MALDI-TOF质谱分析的工作者有一定的参考价值，同时也对开拓MALDI-TOF质谱分析的应用范围有着极其重要的意义。

Ge composition saturation behavior during low-temperature Si1-xGex growth by disilane and solid Ge molecular beam epitaxy

Ge composition dependence on the Ge cell temperature has been studied during the growth of Si1-xGex by disilane and solid Ge molecular beam epitaxy at a substrate temperature of 500 degrees C. It is found that the composition x increases and then saturates when the Ge cell temperature increases, which is different from the composition-dependent behavior in growth at high temperature as well as in growth by molecular beam epitaxy using disilane and germane. The enhanced hydrogen desorption from a Ge site alone cannot account for this abnormal composition-variation behavior. We attribute this behavior to the increase of rate constant of H desorption on a Si site when the Ge cell temperature increases.

连山湾河口典型重金属的吸附解吸规律及机制

锦州湾海域自上世纪30年代开始接纳大量的含重金属的废水、废气及废渣的排放，是我国重金属污染最严重的海域之一。湾内五里河河口区域污染尤其严重，生态环境遭到严重破坏，至上世纪90年代开始该区域已成为无底栖生物区。因此对该区域进行重金属污染分析及其迁移规律的研究显得尤为重要。 本文通过对五里河河口区域水体及沉积物中四种重金属（Cu、Pb、Zn、Cd）的总量分析，采用单因子污染指数法和Hakanson生态风险指数法进行评价，发现该区域沉积物四种重金属中Cd污染最重，在河口区域尤其是河口口外海滨潮滩具有严重的潜在生态风险。对河口口外海滨潮滩沉积物中四种重金属的形态分布研究发现Cd的形态分布为离子可交换态＞碳酸盐结合态＞铁锰氧化物结合态＞有机质及硫化物结合态＞残渣态，基本处于活化状态。随后以河口口外海滨潮滩沉积物为基质进行了一系列的模拟实验，研究沉积物中Cd的迁移规律及机制。 以盐度和温度作为环境影响因子进行的静态模拟实验，结果显示：Cd污染沉积物在不同盐度与温度的水体中均能在24h左右达到最大释放量，使水体中Cd的浓度突然升高，造成水体Cd超标。室温条件下，不同盐度水体条件下沉积物中Cd的释放随盐度增加而增大，其中盐度为21.7‰和14.8‰的水体中出现两次释放高峰现象。恒温条件下在盐度相同的水体中，18℃和4℃的中、低温较29℃的高温更有利于沉积物Cd的释放，而温度相同的条件下则是21.7‰盐度的水体更利于沉积物Cd的释放，其次是海水盐度的水体。当外界条件相同时，温度恒定条件下Cd的释放大于室温条件。 从离子角度分析发现水体中的主要阴、阳离子可促进沉积物Cd的释放，其影响程度为Cl-＞Ca2+ > Mg2+> HCO3-＞SO42-≈Na+。 河口沉积物的环境质量、潜在生态风险及重金属的迁移特性分析均显示连山湾五里河河口区域具有很大的环境风险，应引起重视，并采取有效措施对其进行治理。 关键词 河口沉积物，重金属污染，Cd释放，环境风险

煤层气的解吸/吸附机理研究综述

通过对国内外制约煤层气开发的因素和能源需求的分析,指出了研究煤层气的解吸吸附机理的意义。通过分析国内外解吸吸附机理的研究历史和现状,将煤层气的解吸吸附机理归纳综合为单分子层吸附和多分子层吸附两大类;将煤层气的解吸吸附机理模型归纳为五类,即Lang-muir等温吸附及其扩展模型、BET多分子层吸附模型、吸附势理论模型、吸附溶液模型和实验数据拟合分析模型等。对影响煤层气解吸吸附的因素,如煤层的性质、孔隙性结构、煤层气的组分、压力条件和温度条件等进行了详细的分析说明指出,解吸吸附机理未来研究的重点方向是在考虑目前已认识的复杂因素条件下,以研究煤层气吸附状态和煤层气的解吸动态过程为主,尤其是甲烷与水和煤层中碳分子的结合与分离的方式。

考虑煤层气稳定解吸的数值试井方法

建立了考虑煤层气解吸作用的煤层气稳定解吸均质试井模型,在控制方程中引入稳定源来描述煤层气解吸作用,利用有限元方法求得其数值解。通过分析解吸系数的影响,明确了煤层气解吸作用能缓解地层中压力下降、减缓压力波的传播。当解吸作用达到一定强度时,煤层气解吸量已经达到生产量,压力停止传播,这种情形类似于遇到了定压边界。另外,还考虑了临界解吸压力对试井理论曲线的影响,临界解吸压力和初始地层压力相差的越小,煤层气解吸出现的时间越早,对测试曲线影响也越大。

气相色谱过程的蒙特卡罗模拟

Based on Monte Carlo method the microscopic gas-phase adsorption chromatographic behaviors of volatile chemical compounds were simulated,and the migration process of those compounds followed by the carrier gases along the chromatographic surface and the process of adsorption-desorption were also described.The programs have been compiled to simulate the processes of thermochromatography and isothermal chromatography with different experimental conditions and properties.The calculated results agree well with ...中文摘要：用蒙特卡罗方法模拟了易挥发化合物的气相色谱微观动力学行为,描述了化合物随气流在固体色谱柱表面的迁移以及吸附-解吸等过程。按气相色谱微观动力学模型编译的计算机程序模拟了超重元素化合物在等温色谱及热色谱的动力学过程,并根据不同实验条件进行了大量计算。计算结果与实验数据较为吻合。讨论了超重元素的半衰期、吸附态的周期、载气流量以及化合物的质量密度等对实验结果的影响及该理论模型的优点和待改进的地方。

The influence of the microstructure evolution on the surface morphology in the annealing process of helium-implanted spinel

Single-crystalline spinel (MgAl2O4) specimens were implanted with helium ions of 100 keV at three successively increasing fluences of (0.5, 2.0 and 8.0) x 10(16) ions/cm(2) at room temperature. The specimens were subsequently annealed in vacuum at different temperatures ranging from 500 to 1100 degrees C. Different techniques, including Fourier transformed infrared spectroscopy (FTIR), thermal desorption spectrometry (TDS), atomic force microscopy (AFM) and scanning electron microscopy (SEM) were used to investigate the specimens, It was found that the absorbance peak in the FTIR due to the stretching vibration of the Al-O bond shifts to smaller wave numbers with increasing fluence, shifting back to larger wave numbers with an increase of annealing temperature. The absorbance peak shift has a linear relationship with the fluence increase in the as-implanted state, while it does not have a linear relationship with the fluence increase after the annealing process. Surface deformation occurred in the specimens implanted with fluences of 2.0 and 8.0 x 10(16) ions/cm(2) in the annealing process. The phenomena described above can be attributed to differences in defect formation in the specimens. (C) 2008 Elsevier B.V. All rights reserved.