A surface kinetics model for the growth of Si1-xGex by UHV/CVD using SiH4/CeH4


Autoria(s): Yu Z; Li DZ; Cheng BW; Huang CJ; Lei ZL; Yu JZ; Wang QM; Liang JW
Data(s)

2000

Resumo

The surface reaction mechanism of Si1-xGex/Si growth using SiH4 and GeH4 in UHV/CVD system was studied. The saturated adsorption and desorption of SiH4 from Si(1 0 0) surface was investigated with the help of TPD and RHEED, and it was found that all the 4 hydrogen atoms of one SiH4 molecule were adsorbed to the Si surface, which meant that the dissociated adsorption ratio was proportional to 4 power of surface vacancies. The analysis of the reaction of GeH4 was also done. A new surface reaction kinetic model on Si1-xGex/Si epitaxial growth under UHV conditions by SiH4/GeH4 was proposed based on these studies. The predictions of the model were verified by the experimental results. (C) 2000 Elsevier Science B.V. All rights reserved.

Identificador

http://ir.semi.ac.cn/handle/172111/12420

http://www.irgrid.ac.cn/handle/1471x/65180

Idioma(s)

英语

Fonte

Yu Z; Li DZ; Cheng BW; Huang CJ; Lei ZL; Yu JZ; Wang QM; Liang JW .A surface kinetics model for the growth of Si1-xGex by UHV/CVD using SiH4/CeH4 ,JOURNAL OF CRYSTAL GROWTH,2000,218(2-4):245-249

Palavras-Chave #半导体材料 #SiGe/Si #epitaxial growth #surface reaction kinetics #UHV/CVD system #CHEMICAL VAPOR-DEPOSITION #ATOMIC-HYDROGEN #ADSORPTION #SI(100) #SI2H6 #SIH4 #MECHANISMS #DESORPTION #PHASE #FILMS
Tipo

期刊论文