Dislocation scattering in AlxGa1-xN/GaN heterostructures

The theoretical electron mobility limited by dislocation scattering of a two-dimensional electron gas confined near the interface of AlxGa1-xN/GaN heterostructures was calculated. Based on the model of treating dislocation as a charged line, an exponentially varied potential was adopted to calculate the mobility. The estimated mobility suggests that such a choice can simplify the calculation without introducing significant deviation from experimental data, and we obtained a good fitting between the calculated and experimental results. It was found that the measured mobility is dominated by interface roughness and dislocation scattering at low temperatures if dislocation density is relatively high (>10(9) cm(-2)), and accounts for the nearly flattening-out behavior with increasing temperature.

Enhancement of the far-field output power and the beam properties of plasmonic very small aperture lasers

The properties of plasmonic very small aperture lasers are shown: these integrate surface plasmon structures with very small aperture lasers. The transmission field can be confined to a spot of subwavelength width in the far field, and according to the finite difference time domain simulation results the focal length of the spot can be modulated using different ring periods. Scanning of the subwavelength gating in the far field has been realized numerically. Such a device can be used with a high-resolution far-field scanning optical microscope.

Long-wavelength light emission from self-assembled heterojunction quantum dots

The authors report the optical characteristics of GaSb/InAs/GaAs self-assembled heterojunction quantum dots (QDs). With increasing GaSb deposition, the room temperature emission wavelength can be extended to 1.56 mu m. The photoluminescence mechanism is considered to be a type-II transition with electrons confined in InAs and holes in GaSb.(C) 2008 American Institute of Physics.

Influence of growth temperature on structural and magnetic characterization of (In, Cr)As quantum dots

(In, Cr)As ferromagnetic semiconductor quantum dots (QDs) were grown by molecular beam epitaxy on GaAs (001) substrates. The growth temperature effects on structure and magnetism of the QDs were investigated systematically. The Cr(2+)3d(4) states and quantum confined effect are assumed to play an important role in the room-temperature ferromagnetism of (In, Cr)As QDs. (C) 2009 Elsevier B.V. All rights reserved.

Investigation of mode coupling in a microdisk resonator for realizing directional emission

Mode coupling between the whispering-gallery modes (WGMs) is numerically investigated for a two-dimensional microdisk resonator with an output waveguide. The equilateral-polygonal shaped mode patterns can be constructed by mode coupling in the microdisk, and the coupled modes can still keep high quality factors (Q factors). For a microdisk with a diameter of 4.5 mu m and a refractive index of 3.2 connected to a 0.6-mu m-wide output waveguide, the coupled mode at the wavelength of 1490 nm has a Q factor in the order of 10(4), which is ten times larger than those of the uncoupled WGMs, and the output efficiency defined as the ratio of the energy flux confined in the output waveguide to the total radiation energy flux is about 0.65. The mode coupling can be used to realize high efficiency directional-emission microdisk lasers. (C) 2009 Optical Society of America

Mode Analysis for Equilateral-Triangle-Resonator Microlasers with Metal Confinement Layers

Mode characteristics are analyzed for electrically injected equilateral-triangle-resonator (ETR) semiconductor microlasers, which are laterally confined by insulating barrier SiO2 and electrode metals Ti-Au. For the ETR without metal layers, the totally confined mode field patterns are derived based on the reflection phase shifts, and the Q-factors are calculated from the far-field emission of the analytical near field distribution, which are agreement very well with the numerical results of the finite-difference time-domain (FDTD) simulation. The polarization dependence reflections for light rays incident on semiconductor-SiO2 -Ti-Au multi-layer structures are accounted in considering the confinement of TE and TM modes in the ETR with the metal layers. The reflectivity will greatly reduce with a Ti layer between SiO2 and Au for light rays with incident angle less than 30 especially for the TE mode, even the thickness of the Ti layer is only 10 nm. If the ETR is laterally confined by SiO2-Au layers without the Ti layer, the Fabry-Perot type modes with an incident angle of zero on one side of the ETR can also have high Q-factor. The FDTD simulation for the ETR confined by metal layers verifies the above analysis based on multi-layer reflections. The output spectra with mode intervals of whispering-gallery modes and Fabry-Perot type modes are observed from different ETR lasers with side length of 10 m, respectively.

Dislocation scattering in a two-dimensional electron gas of an AlxGa1-xN/GaN heterostructure

The theoretical electron mobility limited by dislocation scattering of a two-dimensional electron gas confined near the interface of an AlxGa1-xN/GaN heterostructure is calculated. The accurate wave functions and electron distributions of the three lowest subbands for a typical structure are obtained by solving the Schrodinger and Poisson equations self-consistently. Based on the model of treating dislocation as a charged line, a simple scattering potential, a square-well potential, is utilized. The estimated mobility suggests that such a choice can simplify the calculation without introducing significant deviation from experimental data. It is also found that the dislocation scattering dominates both the low- and moderate-temperature mobilities and accounts for the nearly flattening-out behavior with increasing temperature. To clarify the role of dislocation scattering all standard scattering mechanisms are included in the calculation.

Analysis of mode characteristics for equilateral triangle semiconductor microlasers with imperfect boundaries

The influence of imperfect boundaries on the mode quality factor is investigated for equilateral-triangle-resonator (ETR) semiconductor microlasers by the finite difference time domain technique and the Pade approximation with Baker's algorithm. For 2-D ETR with a refractive index of 3.2 and side length of 5 mum, the confined modes can still have a quality factor of about 1000 as small triangles with side length of 1 mum are cut from the vertices of the ETR. For a deformed 5 mum ETR with round vertices and curve sides, the simulated mode quality factors are comparable to the measured results.

Electronic transport through self-assembled quantum disks

In this paper we study a single electron tunneling through a vertically stacked self-assembled quantum disks structure using a transfer matrix technique in the framework of effective mass approximation. In the disks, the electron is confined both laterally and vertically; we separate the motion in the vertical and lateral directions within the adiabatic approximation and treat the energy levels of the latter as an effective confining potential. The influence of a constant applied electric field is taken into account using an exact Airy-function formalism and the current density is calculated at zero temperature. By increasing the widths of the barriers, we find the peaks of the current density shift toward lower voltage region; meanwhile, they can become even sharper. (C) 2004 Elsevier Ltd. All rights reserved.

Impacts of hydrogen dilution on growth and optical properties of a-SiC : H films

Hydrogenated amorphous silicon-carbon (a-SiC:H) films were deposited by plasma enhanced chemical vapor deposition (PECVD) with a fixed methane to silane ratio ([CH4]/[SiH4]) of 1.2 and a wide range of hydrogen dilution (R-H=[H-2]/[SiH4 + CH4]) values of 12, 22, 33, 102 and 135. The impacts of RH on the structural and optical properties of the films were investigated by using UV-VIS transmission, Fourier transform infrared (FTIR) absorption, Raman scattering and photoluminescence (PL) measurements. The effects of high temperature annealing on the films were also probed. It is found that with increasing hydrogen dilution, the optical band gap increases, and the PL peak blueshifts from similar to1.43 to 1.62 eV. In annealed state, the room temperature PL peak for the low R-H samples disappears, while the PL peak for the high R-H samples appears at similar to 2.08 eV, which is attributed to nanocrystalline Si particles confined by Si-C and Si-O bonds.

Photoluminescence investigation of two-dimensional electron gas in an undoped AlxGa1-xN/GaN heterostructure

Low-temperature photoluminescence measurement is performed on an undoped AlxGa1-xN/GaN heterostructure. Temperature-dependent Hall mobility confirms the formation of two-dimensional electron gas (2DEG) near the heterointerface. A weak photoluminescence (PL) peak with the energy of similar to 79meV lower than the free exciton (FE) emission of bulk GaN is related to the radiative recombination between electrons confined in the triangular well and the holes near the flat-band region of GaN. Its identification is supported by the solution of coupled one-dimensional Poisson and Schrodinger equations. When the temperature increases, the red shift of the 2DEG related emission peak is slower than that of the FE peak. The enhanced screening effect coming from the increasing 2DEG concentration and the varying electron distribution at two lowest subbands as a function of temperature account for such behaviour.

QE and Suns-V-oc study on the epitaxial CSiTF solar cells

In order to clarify the major factors having confined the efficiencies of as-prepared crystalline silicon thin film (CSiTF) solar cells on the SSP (silicon sheets from powder) ribbons, QE (quantum efficiency) and Suns-V-oc study were performed on the epitaxial CSiTF solar cells fabricated on the SSP ribbons, the SSP ribbons after surface being zone melting recrystallized (ZMR) and single crystalline silicon (sc-Si) substrates. The results show that the epi-layers deposited on the SSP ribbons have rough surfaces, which not only increases the diffusion reflectance on the surfaces but also makes the anti-reflection coatings become structure-loosened, both of which would deteriorate the light trapping effect; in addition, the epi-layers deposited on the SSP ribbons possess poor crystallographic quality, so the heavy grain boundary (GB) recombination limits the diffusion length of the minority carriers in the epi-layers, which makes the as-prepared CSiTF solar cells suffer the worse spectra response at long-wavelength range. Nearly all the dark characteristic parameters of the CSiTF solar cells are far away from the ideal values. The performances of the CSiTF solar cells are especially affected by too high I-02 (the dark saturation current of space charge region) values and too low R-sh (parallel resistance) values. The higher 102 values are mainly caused by the heavy GB recombination resulting from the poor crystallographic qualities of the silicon active layers in the space charge regions, while the lower R-sh values are attributed to the electrical leakage at the un-passivated PN junction or solar cell edges after the solar cells are cut by the laser scriber.

Symmetry analysis and numerical simulation of mode characteristics for equilateral-polygonal optical microresonators

Mode characteristics for two-dimensional equilateral-polygonal microresonators are investigated based on symmetry analysis and finite-difference time-domain numerical simulation. The symmetries of the resonators can be described by the point group C-Nv, accordingly, the confined modes in these resonators can be classified into irreducible representations of the point group C-Nv. Compared with circular resonators, the modes in equilateral-polygonal resonators have different characteristics due to the break of symmetries, such as the split of double-degenerate modes, high field intensity in the center region, and anomalous traveling-wave modes, which should be considered in the designs of the polygonal resonator microlasers or optical add-drop filters.

Plasmonic very-small-aperture lasers

The fabrication of plasmonic very-small-aperture lasers is demonstrated in this letter. It is an integration of the surface plasmon structures and very-small-aperture lasers (VSAL). The experimental and numerical results demonstrate that the transmission field can be confined to a spot with subwavelength width in the far field, and the power output can be enhanced 140% of the normal VSAL. Such a device can be useful in the application of a high resolution far-field scanning optical microscope. (C) 2007 American Institute of Physics.

Pseudospin in Si delta-doped InAlAs/InGaAs/InAlAs single quantum well

Magneto-transport measurements have been carried out on double/single-barrier-doped In0.52Al0.48As/In0.53Ga0.47As/In0.52Al0.48As quantum well samples from 1.5 to 60 K in an applied magnetic field up to 13 T. Beating Shubnikov-de Haas oscillation is observed for the symmetrically double-barrier-doped sample and demonstrated due to a symmetric state and an antisymmetric state confined in two coupled self-consistent potential wells in the single quantum well. The energy separation between the symmetric and the antisymmetric states for the double-barrier-doped sample is extracted from experimental data, which is consistent with calculation. For the single-barrier-doped sample, only beating related to magneto-intersubband scattering shows up. The pesudospin property of the symmetrically double-barrier-doped single quantum well shows that it is a good candidate for fabricating quantum transistors. (c) 2007 Elsevier Ltd. All rights reserved.