Long-wavelength light emission from self-assembled heterojunction quantum dots
| Data(s) |
2008
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|---|---|
| Resumo |
The authors report the optical characteristics of GaSb/InAs/GaAs self-assembled heterojunction quantum dots (QDs). With increasing GaSb deposition, the room temperature emission wavelength can be extended to 1.56 mu m. The photoluminescence mechanism is considered to be a type-II transition with electrons confined in InAs and holes in GaSb.(C) 2008 American Institute of Physics. |
| Identificador | |
| Idioma(s) |
英语 |
| Fonte |
Zhou, ZQ ; Xu, YQ ; Hao, RT ; Tang, B ; Ren, ZW ; Niu, ZC .Long-wavelength light emission from self-assembled heterojunction quantum dots ,JOURNAL OF APPLIED PHYSICS,2008 ,103(9): Art. No. 094315 |
| Palavras-Chave | #半导体物理 #MU-M #GAAS #GROWTH #EPITAXY |
| Tipo |
期刊论文 |
