Fluorescence lifetime increase by introduction of F- ions in ytterbium-doped TeO2-based glasses

this paper was retracted

熔制条件对铋酸盐玻璃性质的影响

采用传统的玻璃熔融法制备了组成为60Bi2O3-20B2O3-15SiO2-5La2O3(mol%)的铋酸盐玻璃， 系统研究了不同工艺过程对玻璃性能的影响. 分析了样品ICP的成分，扫描电镜，X-射线衍射谱， 差热分析和紫外-可见-近红外透过光谱测试. 结果表明：使用刚玉坩埚能提高玻璃的抗析晶稳定性 和透过率，陶瓷坩埚和白金坩埚均受到严重腐蚀，玻璃组分也随之发生很大变化. 当熔制温度从1 100 ℃变化到1 300 ℃时，玻璃的颜色从浅黄色变到深红棕色. 尤其是白金粒子被腐蚀进入玻璃液 后，玻璃中很容易形成纳米颗粒或者团聚形成胶体粒子，在玻璃中形成色散源，加深玻璃的颜色， 降低透过率. 1 300 ℃下，白金粒子起到晶核剂的作用，生成Bi2Pt2O7和BiB3O6晶相，导致玻璃失透.

Effects of thermal treatment on broadband near-infrared emission from Bi-doped chalcohalide glasses

GeGaSKBr glass with Bi ions as emission centers were fabricated. An intense emission centered at around 1230 nm with the width of more than 175 nm was observed by 808 nm photo-excitation of the glass. Lower quenching rate and thermal treatment promote micro-crystallization process, thus strengthening the emission. Crown Copyright (c) 2008 Published by Elsevier Ltd. All rights reserved.

Broadband infrared luminescence from Li2O-Al2O3-ZnO-SiO2 glasses doped with Bi2O3

The broadband emission in the 1.2 similar to 1.6 mu m region from Li2O-Al2O3-ZnO-SiO2 ( LAZS) glass codoped with 0.01mol.% Cr2O3 and 1.0mol.% Bi2O3 when pumped by the 808nm laser at room temperature is not initiated from Cr4+ ions, but from bismuth, which is remarkably different from the results reported by Batchelor et al. The broad similar to 1300nm emission from Bi2O3-containing LAZS glasses possesses a FWHM ( Full Width at Half Maximum) more than 250nm and a fluorescent lifetime longer than 500 mu s when excited by the 808nm laser. These glasses might have the potential applications in the broadly tunable lasers and the broadband fiber amplifiers. (c) 2005 Optical Society of America.

GeO2 : Bi, M (M = Ga, B) glasses with super-wide infrared luminescence

Broadband infrared luminescence covering the optical telecommunication wavelength region of 0, E and S bands was observed in GeO2: Bi, M (M = Ga, B) glasses prepared by conventional melting-quenching technique. The luminescence with a maximum at around 1320 nm possesses a full width at half maximum larger than 300 nm and mean fluorescent lifetime longer than 500 mus when excited by an 808 nm-laser. These glasses may have potential applications in widely tunable laser and super-broadband optical amplifier for the optical communications. (C) 2005 Elsevier B.V. All rights reserved.

超宽带光纤放大器用的新型掺铋发光材料

最近，一种新型的掺铋发光材料引起了人们的关注。这种发光材料有长的荧光寿命（τ＞200μs），在800nm激光激发下发射波长在1200～1600nm区间的超宽带荧光（荧光半高宽FWHM＞200nm），其发光性质与以往文献中报道的Bi^3＋或Bi^2＋掺杂的发光材料的性质截然不同；光发射截面（σem）是光掺铒光纤放大器玻璃（EDFAG）的2～3倍，其σem×FWHM值是EDFAG的10倍左右，σem×τ值是掺Ti^3＋蓝宝石的3倍左右。

化学修饰铋膜电极检测重金属镉

随着我国工业的快速发展，环境污染日益严重，其中重金属已经成为最主要的污染物 之一。重金属具有分布广泛、半衰期长等特点，因而对人们的生产生活危害巨大。镉作为 一种常见的重金属污染物，它能够引发废用性萎缩、肾功能衰竭和感染等疾病，因此对环 境中存在的痕量镉的进行检测显得极为重要。传统的痕量分析方法包括光谱分析法和色谱 分析法，但这两方法所使用的仪器比较笨重，操作过程复杂，因而不适于在线分析。电化 学分析方法因其快速、便携、价格低廉、灵敏度高等特点而受到了人们的广泛关注，其中 较为常用的阳极溶出伏安法已经在镉离子等重金属离子的现场快速高灵敏检测中发挥了 重要作用。然而传统阳极溶出法中使用的汞电极因具有毒性而被许多国家禁止使用，所以 寻找汞电极的替代电极成为近年来的阳极溶出技术的研究热点。铋膜电极因具有类似汞电 极的分析性能且环境友好而受到了广泛重视，特别是各种化学修饰方法使得铋膜电极的性 能得到了显著提高。但是目前铋膜电极仍存在稳定性低、抗干扰能力差等问题，这些不足 严重制约了该类电极在重金属的阳极溶出分析中的应用。本文旨在通过新的化学修饰方法 解决铋膜电极应用中的瓶颈问题，发展具有优异分析性能的化学修饰铋膜电极应用于镉离 子等重金属离子的阳极溶出分析。本文的主要研究内容包括： l）以阳极溶出法测定镉离子为例，研究了化学修饰铋膜电极的响应特性，考察了富 集时间、富集电位、铋离子浓度、离子载体浓度和Nafion 浓度等实验条件对检测灵敏度的 影响。 2）将离子载体引入铋膜电极与Nafion 结合使用，研究了镉离子在该电极上的阳极溶 出响应，并探讨了铜、铅、铟三种金属离子对镉离子检测选择性的影响。将这种改良后的 化学修饰铋膜电极用于实际海水样品的检测，所得结果与ICP-MS 的测量结果基本一致。 3）将四氟硼酸钠引入铋膜电极与离子载体、碳纳米管结合使用，研究了镉离子在该 电极上的阳极溶出响应，考察了铜、铅、铟离子对镉离子测定的影响。 4）考察了电解富集和开路电位富集两种富集方式对电极灵敏度和选择性的影响。 实验表明：通过预富集，在未除氧的溶液中即可得到显著的镉离子溶出电流峰，且背 景噪音低；加入离子载体后，电极对目标金属有良好的选择性，可以在复杂基体条件下测 定重金属离子镉；电解富集条件下电极的的灵敏度较高，而开路电位富集条件下电极的选 择性较好。这种环保的无汞化学修饰电极为海水中重金属污染物的检测提供了新的手段。

Role of Bi3+ ions for Er3+ ions efficient 1.54 mu m light emission in Er/Bi codoped SiO2 thin film prepared by sol-gel method

Er/Bi codoped SiO2 thin films were prepared by sol-gel method and spin-on technology with subsequent annealing process. The bismuth silicate crystal phase appeared at low annealing temperature while vanished as annealing temperature exceeded 1000 degrees C, characterized by X-ray diffraction, and Rutherford backscattering measurements well explained the structure change of the films, which was due to the decrease of bismuth concentration. Fine structures of the Er3+-related 1.54 mu m light emission (line width less than 7 nm) at room temperature was observed by photoluminescence (PL) measurement. The PL intensity at 1.54 gm reached maximum at 800 degrees C and decreased dramatically at 1000 degrees C. The PL dependent annealing temperature was studied and suggested a clear link with bismuth silicate phase. Excitation spectrum measurements further reveal the role of Bi3+ ions for Er3+ ions near infrared light emission. Through sol-gel method and thermal treatment, Bi3+ ions can provide a perfect environment for Er3+ ion light emission by forming Er-Bi-Si-O complex. Furthermore, energy transfer from Bi3+ ions to Er3+ ions is evidenced and found to be a more efficient way for Er3+ ions near infrared emission. This makes the Bi3+ ions doped material a promising application for future erbium-doped waveguide amplifier and infrared LED

Growth of CeO2 : Bi12SiO20 crystals in multi-position furnace(II) - Space growth experiment

Ce-doped Bi12SiO20 single crystal with size of phi10mm x 40mm was successfully grown in space on board of the spacecraft Shenzhou No.3. The surface morphology of space-grown crystal is different from that of ground-grown crystal The space- and ground-grown crystals were measured by X-ray rocking curves, absorption spectra and micro-Raman spectra. The results show that the quality of Ce-deped crystal grown in space is better than that of the ground-grown one. The effect of doping on optical properties of BSO grown in space is evident in comparison with the ground-grown crystal.

Electronic structure and electron g factors of HgTe quantum dots

The electronic structure and electron g factors of HgTe quantum dots are investigated, in the framework of the eight-band effective-mass approximation. It is found that the electron states of quantum spheres have aspheric properties due to the interaction between the conduction band and valence band. The highest hole states are S (l = 0) states, when the radius is smaller than 9.4 nm. the same as the lowest electron states. Thus strong luminescence from H-Te quantum dots with radius smaller than 9.4 nm has been observed (Rogach et al 2001 Phys. Statits Solidi b 224 153). The bandgap of H-Te quantum spheres is calculated and compared with earlier experimental results (Harrison et al 2000 Pure Appl. Chem. 72 295). Due to the quantum confinement effect, the bandgap of the small HgTe quantum spheres is positive. The electron g factors of HgTe quantum spheres decrease with increasing radius and are nearly 2 when the radius is very small. The electron g factors of HgTe quantum ellipsoids are also investigated. We found that as some of the three dimensions increase, the electron g factors decrease. The more the dimensions increase, the more the g factors decrease. The dimensions perpendicular to the direction of the magnetic field affect the g factors more than the other dimension.

V5+-doped Bi3.4Yb0.6Ti3O12 fatigue resistant ferroelectric thin films

In this paper, a serial of Bi3.4Yb0.6Ti3-xVxO12 (BYTV) thin film with different V5+ contents were deposited on Pt/Ti/SiO2/Si substrates by chemical solution deposition (CSD). The crystallized phase and electrical properties of the films were investigated using X-ray diffraction, polarization hysteresis loops, leakage current-voltage, and fatigue test. From our experimental results, it can be found that the ferroelectric properties can be improved greatly using V5+-doped in Bi3.4Yb0.6Ti3O12 (BYT) thin film, compared with the reported BYT thin film. The remanent polarization was enhanced and excellent leakage current characteristic with 10(-11)A at the bias voltage of 4V, which is much lower than the BYT thin film or some reported bismuth layer-structure ferroelectric films. Fatigue test shows that the fabricated films have good anti-fatigue characteristic after 10(10) switching cycles. (c) 2008 Published by Elsevier B.V.

Production of highly charged ion beams with SECRAL

Superconducting electron cyclotron resonance ion source with advanced design in Lanzhou (SECRAL) is an all-superconducting-magnet electron cyclotron resonance ion source (ECRIS) for the production of intense highly charged ion beams to meet the requirements of the Heavy Ion Research Facility in Lanzhou (HIRFL). To further enhance the performance of SECRAL, an aluminum chamber has been installed inside a 1.5 mm thick Ta liner used for the reduction of x-ray irradiation at the high voltage insulator. With double-frequency (18+14.5 GHz) heating and at maximum total microwave power of 2.0 kW, SECRAL has successfully produced quite a few very highly charged Xe ion beams, such as 10 e mu A of Xe37+, 1 e mu A of Xe43+, and 0.16 e mu A of Ne-like Xe44+. To further explore the capability of the SECRAL in the production of highly charged heavy metal ion beams, a first test run on bismuth has been carried out recently. The main goal is to produce an intense Bi31+ beam for HIRFL accelerator and to have a feel how well the SECRAL can do in the production of very highly charged Bi beams. During the test, though at microwave power less than 3 kW, more than 150 e mu A of Bi31+, 22 e mu A of Bi41+, and 1.5 e mu A of Bi50+ have been produced. All of these results have again demonstrated the great capability of the SECRAL source. This article will present the detailed results and brief discussions to the production of highly charged ion beams with SECRAL.

Facile Synthesis and Characterization of Single Crystalline Bi2S3 with Various Morphologies

Single crystalline Bi2S3 With various morphologies (wires, rods, and flowers) has been successfully prepared via a simple polyol solution process and characterized by X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), and transmission electron microscopy (TEM) techniques. The morphologies of Bi2S3 crystals are highly dependent on the experimental parameters, including the reaction temperature, reactant ratio, sulfur source, and additive. The adjustment of these parameters can lead to an obvious shape evolution of products, and the growth mechanism has been proposed.

Combining chemical reduction with an electrochemical technique for the simultaneous detection of Cr(VI), Pb(II) and Cd(II)

This work herein reports the approach for the simultaneous determination of heavy metal ions including cadmium (Cd(II)), lead (Pb(II)), and chromium (Cr(VI)) using a bismuth film electrode (BFE) by anodic stripping voltammertry (ASV). The BFE used was plated in situ. Due to the reduction of Cr(VI) with H2O2 in the acid medium, on one hand, the Cr(III) was produced and Cr(VI) was indirectly detected by monitoring the content of Cr(III) using square-wave ASV. On the other hand, Pb(II) was also released from the complex between Pb(II) and Cr(VI). Furthermore, the coexistence of the Cd(II) was also simultaneously detected with Pb(II) and Cr(VI) in this system as a result of the formation of an alloy with Bi. The detection limits of this method were 1.39 ppb for Cd(II), 2.47 ppb for Pb(II) and 5.27 ppb for Cr(VI) with a preconcentration time of 120 s under optimal conditions (S/N = 3), respectively. Furthermore, the sensitivity of this method can be improved by controlling the deposition time or by using a cation-exchange polymer (such as Nafion) modified electrode.

High-sensitivity determination of lead and cadmium based on the Nafion-graphene composite film

Graphene nanosheets, dispersed in Nafion (Nafion-G) solution, were used in combination with in situ plated bismuth film electrode for fabricating the enhanced electrochemical sensing platform to determine the lead (Pb2+) and cadmium (Cd2+) by differential pulse anodic stripping voltammetry (DPASV). The electrochemical properties of the composite film modified glassy carbon electrode were investigated. It is found that the prepared Nafion-G composite film not only exhibited improved sensitivity for the metal ion detections, but also alleviated the interferences due to the synergistic effect of graphene nanosheets and Nafion. The linear calibration curves ranged from 0.5 mu g L-1 to 50 mu g L-1 for Pb2+ and 1.5 mu g L-1 to 30 mu g L-1 for Cd2+. respectively. The detection limits (S/N = 3) were estimated to be around 0.02 mu g L-1 for Pb2+ and Cd2+. The practical application of the proposed method was verified in the water sample determination.