V5+-doped Bi3.4Yb0.6Ti3O12 fatigue resistant ferroelectric thin films
| Data(s) |
2008
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| Resumo |
In this paper, a serial of Bi3.4Yb0.6Ti3-xVxO12 (BYTV) thin film with different V5+ contents were deposited on Pt/Ti/SiO2/Si substrates by chemical solution deposition (CSD). The crystallized phase and electrical properties of the films were investigated using X-ray diffraction, polarization hysteresis loops, leakage current-voltage, and fatigue test. From our experimental results, it can be found that the ferroelectric properties can be improved greatly using V5+-doped in Bi3.4Yb0.6Ti3O12 (BYT) thin film, compared with the reported BYT thin film. The remanent polarization was enhanced and excellent leakage current characteristic with 10(-11)A at the bias voltage of 4V, which is much lower than the BYT thin film or some reported bismuth layer-structure ferroelectric films. Fatigue test shows that the fabricated films have good anti-fatigue characteristic after 10(10) switching cycles. (c) 2008 Published by Elsevier B.V. |
| Identificador | |
| Idioma(s) |
英语 |
| Fonte |
Tang, JX (Tang, J. X.); Tang, MH (Tang, M. H.); Zhang, J (Zhang, J.); Yang, F (Yang, F.); Zhao, WF (Zhao, W. F.); Xu, HY (Xu, H. Y.); Sun, ZH (Sun, Z. H.); Zhou, YC (Zhou, Y. C.) .V5+-doped Bi3.4Yb0.6Ti3O12 fatigue resistant ferroelectric thin films ,MATERIALS LETTERS,2008,62(17-18):3189-3191 |
| Palavras-Chave | #BYTV thin film #P-E hysteresis loops #leakage current #fatigue performance |
| Tipo |
期刊论文 |
