Growth of CeO2 : Bi12SiO20 crystals in multi-position furnace(II) - Space growth experiment


Autoria(s): Zhou YF; Wang JC; Tang LA; Chen NF; Chen WC
Data(s)

2004

Resumo

Ce-doped Bi12SiO20 single crystal with size of phi10mm x 40mm was successfully grown in space on board of the spacecraft Shenzhou No.3. The surface morphology of space-grown crystal is different from that of ground-grown crystal The space- and ground-grown crystals were measured by X-ray rocking curves, absorption spectra and micro-Raman spectra. The results show that the quality of Ce-deped crystal grown in space is better than that of the ground-grown one. The effect of doping on optical properties of BSO grown in space is evident in comparison with the ground-grown crystal.

Identificador

http://ir.semi.ac.cn/handle/172111/8128

http://www.irgrid.ac.cn/handle/1471x/63658

Idioma(s)

英语

Fonte

Zhou, YF; Wang, JC; Tang, LA; Chen, NF; Chen, WC .Growth of CeO2 : Bi12SiO20 crystals in multi-position furnace(II) - Space growth experiment ,JOURNAL OF INORGANIC MATERIALS,MAR 2004,19 (2):283-288

Palavras-Chave #半导体材料 #doped cerium bismuth silicon oxides (Ce : BSO)
Tipo

期刊论文