Effects of thermal treatment on broadband near-infrared emission from Bi-doped chalcohalide glasses


Autoria(s): Yang Guang; 陈丹平; Wang Wei; Xu Yinsheng; 曾惠丹; Yang Yunxia; Chen Guorong
Data(s)

2008

Resumo

GeGaSKBr glass with Bi ions as emission centers were fabricated. An intense emission centered at around 1230 nm with the width of more than 175 nm was observed by 808 nm photo-excitation of the glass. Lower quenching rate and thermal treatment promote micro-crystallization process, thus strengthening the emission. Crown Copyright (c) 2008 Published by Elsevier Ltd. All rights reserved.

National Natural Science Foundation of China [NSFC 50702021]

Identificador

http://ir.siom.ac.cn/handle/181231/5317

http://www.irgrid.ac.cn/handle/1471x/12012

Idioma(s)

英语

Fonte

Yang Guang;陈丹平;Wang Wei;Xu Yinsheng;曾惠丹;Yang Yunxia;Chen Guorong .,J. Eur. Ceram. Soc.,2008,28(16):3189-3191

Palavras-Chave #X-ray method #Optical properties #Glass #Functional applications #Bismuth-doped
Tipo

期刊论文