Recent research results on deep level defects in semi-insulating InP - Application to improve material quality

An apparent defect suppression effect has been observed in InP through an investigation of deep level defects in different semi-insulating (SI) InP materials. Quality improvement of SI-InP based on the defect suppression mechanism is presented.

Deep levels in high resistivity GaN epilayers grown by MOCVD

Undoped high resistivity (HR) GaN epilayers were grown on (0001) sapphire substrate by metalorganic chemical vapor deposition (MOCVD). Thermally stimulated current (TSC) and resistivity measurements have been carried out to investigate deep level traps. Deep levels with activation energies of 1.06eV and 0.85eV were measured in sample 1. Gaussian fitting of TSC spectra showed five deep levels in different samples. (c) 2006 WILEY VCH Vertag GmbH & Co. KGaA, Weinheim

海量层次信息的Focus+Context交互式可视化技术

综述了海量层次信息可视化与Focus+Context技术的相关工作,针对海量层次信息可视化的交互问题,在嵌套圆可视化技术的基础上提出了基于上下文感知的Focus+Context交互式可视化技术.首先,基于外切圆排列方法提出对圆心进行三角网格剖分的方法,为变形计算建立上下文;然后,针对变形计算前后上下文一致性问题,在三角网格邻居跟踪方法的基础上,提出了用于同层兄弟节点上下文感知的外切圆变形排列方法,以及用于父子节点上下文感知的嵌套圆迭代排列方法.实验结果表明。上述方法在实现焦点突出的鱼眼视图的同时,能够有效地解决Focus+Context交互式可视化的上下文感知问题.上述方法应用于文件系统海量层次信息的交互式可视化问题,提供了交互式可视化工具.

DETERMINATION OF THE SUBBAND ENERGY IN THE V-SHAPED POTENTIAL WELL OF DELTA-DOPED GAAS BY DEEP-LEVEL TRANSIENT SPECTROSCOPY

Using deep level transient spectroscopy (DLTS) the conduction-subband energy levels in a V-shaped potential well induced by Si-delta doping in GaAs were determined. Self-consistent calculation gives four subbands in the well below the Fermi level. Experimentally, two DLTS peaks due to electron emission from these subbands were observed. Another two subbands with low electron concentration are believed to be merged into the adjacent DLTS peak. A good agreement between self-consistent calculation and experiment was obtained. (C) 1994 American Institute of Physics.