DEEP CENTER SCATTERING POTENTIAL IN INGAP

Autoria(s): ZHU QS; HIRAMATSU K; SAWAKI N; AKASAKI I; LIU XN
Data(s)

1994
Identificador

http://ir.semi.ac.cn/handle/172111/13945

http://www.irgrid.ac.cn/handle/1471x/101007
Idioma(s)

英语
Fonte

ZHU QS; HIRAMATSU K; SAWAKI N; AKASAKI I; LIU XN.DEEP CENTER SCATTERING POTENTIAL IN INGAP,JOURNAL OF APPLIED PHYSICS,1994,76(11):7410-7414
Palavras-Chave #半导体材料 #SEMICONDUCTORS #DEFECTS #VACANCY #SILICON #LEVEL #LPE
Tipo

期刊论文
Acesso ao item digital