Characteristics of high Al content AlxGa1-xN grown by metalorganic chemical vapor deposition

The epitaxial growth of AlxGa1-xN film with high Al content by metalorganic chemical vapor deposition (MOCVD) has been accomplished. The resulting Al content was determined to be 54% by high resolution X-ray diffraction (HRXRD) and Vegard's law. The full width at half maximum (FWHM) of the AlGaN (0002) HRXRD rocking curve was about 597 arcsec. Atomic force microscopy (AFM) image showed a relatively rough surface with grain-like islands, mainly coming from the low surface mobility of adsorbed Alspecies. From transmittance measurement, the cut-off wavelength was around 280 nm and Fabry-Perot fringes were clearly visible in the transmission region. Cathodoluminescence (CL) measurement indicated that there existed a uniformity in the growth direction and a non-uniformity in the lateral direction. (C) 2007 Elsevier Ltd. All rights reserved.

A surface kinetics model for the growth of Si1-xGex by UHV/CVD using SiH4/CeH4

The surface reaction mechanism of Si1-xGex/Si growth using SiH4 and GeH4 in UHV/CVD system was studied. The saturated adsorption and desorption of SiH4 from Si(1 0 0) surface was investigated with the help of TPD and RHEED, and it was found that all the 4 hydrogen atoms of one SiH4 molecule were adsorbed to the Si surface, which meant that the dissociated adsorption ratio was proportional to 4 power of surface vacancies. The analysis of the reaction of GeH4 was also done. A new surface reaction kinetic model on Si1-xGex/Si epitaxial growth under UHV conditions by SiH4/GeH4 was proposed based on these studies. The predictions of the model were verified by the experimental results. (C) 2000 Elsevier Science B.V. All rights reserved.

Effect of rapid thermal annealing on Ti-AlN interfaces

The interface diffusion, reaction, and adherence of rapid thermal annealed Ti/ALN were investigated by RES, AES, SIMS, XRD and a scratch test. The experimental results show that diffusion and reaction occurs at the interface of Ti/AlN when the sample is rapidly annealed. During annealing, both the O adsorbed on the surface and doped in the AlN substrate diffuse into the Ti film. At low temperature TiO2 is produced. At higher temperature O reacts with the diffused Al in the Ti film and produces an Al2O3 layer in the middle of the film. N diffuses into the Ti film and produces TiN with an interface reaction. Ti oxide is produced at the interface between the film and the substrate. Scratch test results show that interface adherence is distinctly improved by rapid annealing at low temperature and decreases at higher temperature. (C) 1999 Elsevier Science B.V. All rights reserved.

Comparative study of the structural properties of nanocrystalline Ge : H plasma deposited onto the cathode and the anode using high hydrogen dilutions

Nanocrystalline Ge:H thin films were deposited simultaneously on both electrodes of a conventional capacitively coupled reactor for plasma enhanced chemical vapor deposition using highly H-2 diluted GeH4 as the source gas. The structure of the films was investigated by Raman scattering and X-ray diffraction as a function of substrate temperature, H-2 dilution, and r.f. power. The hydrogen concentrations and bonding configurations were determined by infrared absorption spectroscopy. For anodic deposition, the preferred crystallographic orientation and film crystallinity depend rather strongly on the deposition parameters. This dependence can be explained by changing surface mobilities of adsorbed precursors due to changes in the hydrogen coverage of the growing surface. Cathodic deposition is much less sensitive to variations in the deposition parameters. It generally results in films of high crystallinity with randomly oriented crystallizes. Some possible mechanisms for these differences between anodic and cathodic deposition are discussed. (C) 1999 Elsevier Science S.A. All rights reserved.

Morphology and wetting layer properties of InAs/GaAs nanostructures

In this work, we present the growth of InAs rings by droplet epitaxy. A complete process from the rings formation to their density saturation has been demonstrated: A morphological evolution with the varying of the indium deposition amount has been, clearly observed. Our results indicate that there, is a critical deposition amount (similar to 1.1 ML) for the indium to form InAs dots before droplets form; there is also a critical deposition amount (similar to 1.4 ML) to form InAs ring, but it is caused by the formation of droplets as the deposition amount increases. The density of the rings saturates when the deposition amount exceeds similar to 3.3 ML; because the adsorbed indium atoms block sites for further adsorption and the following supplied In only contributes to the size increase of In droplets. Still, as the In deposition amount increases, we can find coupled quantum rings. Moreover, the wetting layer properties of these structures are studied by reflectance difference spectroscopy, which shows a complicated evolution with the In amount. (C) 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

Disentangling mechanical and mass effects on nanomechanical resonators

Micro and nanomechanical resonators are powerful and label-free sensors of analytes in various environments. Their response, however, is a convolution of mass, rigidity, and nanoscale heterogeneity of adsorbates. Here we demonstrate a procedure to disentangle this complex sensor response, to simultaneously measure both mass and elastic properties of nanometer thick samples. This turns an apparent disadvantage of these resonators into a striking and unique asset, enabling them to measure more than mass alone.

黄土高原旱区长期施肥条件下土壤钾素形态空间分布特征及有效性研究

在黄土高原南部旱地长期肥料定位试验的基础上研究了土壤钾素空间分布特征及其有效性。结果表明:长期施肥后土壤中特殊吸附性钾(SAK)和非特殊吸附性钾(NSAK)储量增加,但水溶性钾(WSK)和非交换性钾(NEK)则有明显的下降,单施N水溶性钾下降了48.24%,单施P下降32.32%,NP配施和NPK配施分别下降10.61%和17.93%,非交换性钾降幅为8.56%~24.91%。增施钾肥可以缓解因长期施肥作物生长所携出的钾素,增加耕层土壤中的水溶性钾、非特殊吸附性钾及特殊吸附性钾。相关分析结果表明,土壤不同形态钾素对速效钾的重要性依次为WSK>NSAK>SAK>NEK,土壤速效钾与水溶性钾、非特殊吸附性钾呈显著相关,与特殊吸附性钾和非交换性钾无显著相关性。

THE ADSORPTION OF O2 ON FESI SURFACES

The initial adsorption stages and the interaction of oxygen on FeSi surfaces have been studied as a function of exposure and annealing temperature using a variety of techniques including HREELS, AES, LEED, XPS and UPS. O2 was found to adsorb dissociatively on the FeSi surfaces at room temperature. The whole adsorption process can be divided into four stages. Heating promotes the oxidation of Si, and a thin SiO2 overlayer is formed on the surface when annealed at 450-degrees-C, while all FeOx species are reduced. Models for adsorbed atomic O on the FeSi(100) surface exposed to different oxygen exposures have been put forward to account for the observed experimental results.

Photoluminescence studies on the interaction of near-surface GaAs/AlxGa1-xAs quantum wells with chemical adsorbates

The chemical adsorption of sodium sulphide, ferrocene, hydroquinone and p-methyl-nitrobenzene onto the surface of a GaAs/AlxGa1-xAs multiquantum well semiconductor was characterized by steady state and time-resolved photoluminescence (PL) spectroscopy. The changes in the PL response, including the red shift of the emission peak of the exciton in the quantum well and the enhancement of the PL intensity, are discussed in terms of the interactions of the adsorbed molecules with surface states.

PHOTOLUMINESCENCE STUDIES OF CHEMICAL ADSORPTION OF GAAS/ALXGA1-XAS MULTIQUANTUM-WELL SEMICONDUCTOR

Adsorption of ferrocene and p-methylnitrobenzene on a GaAs/AlxGa1-xAs multiquantum well semiconductor is characterized by the changes in the photoluminescent response in terms of the interactions of adsorbed molecules with surface states.

TCAS树脂的制备及对水中污染物的吸附性能研究

本论文采用第三代超分子受体化合物——磺化硫杂杯芳烃（简称TCAS）作为活性组分，将其加载到树脂载体上，制成一种新型的TCAS吸附树脂。借助红外光谱、紫外光谱、核磁共振和电喷雾质谱等检测分析手段对TCAS吸附树脂及其制备的中间产物进行表征。采用静态批试验方法研究发现TCAS吸附树脂对重金属和卤代烃类有机物都有较好的吸附去除效果，其对Pb2+、Cd2+、Cu2+和Zn2+四种重金属的吸附容量分别达到26.32mg•g-1、18.12mg•g-1、12.24mg•g-1和6.85mg•g-1；对二氯甲烷、三氯甲烷、四氯化碳、三氯乙烯四种卤代烃的吸附容量分别为9.23 mg•g-1、7.92 mg•g-1、6.73 mg•g-1和4.34 mg•g-1。并发现温度、树脂用量和溶液pH值等因素能影响TCAS吸附树脂的吸附去除效果。同时研究了TCAS吸附树脂对污染物的吸附优先性规律、动力学规律和热力学规律。采用化学计量学分析TCAS络合重金属的紫外光谱，获得了TCAS－重金属络合物的纯紫外光谱，以及TCAS、TCAS－重金属络合物随重金属浓度变化的分布曲线，并最终解析得到TCAS与Cu、Zn、Cd和Pb的络合常数（lgβ）分别为9.79、8.72、6.87和5.00。通过多次吸附试验，考察了TCAS吸附树脂回收循环利用的可行性，发现TCAS吸附树脂可进行多次循环回收再利用。

典型粘土矿物吸附原油的清洗技术研究

含油污泥是危险废物，已列入《国家危险废物名录》。目前，热水清洗法是含油污泥处理的核心技术之一，但因含油污泥来源不同，成分性质各异，含油污泥清洗技术的普适性及规律性差。粘土矿物作为含油污泥泥质的主要成分，其吸附原油的清洗是含油污泥清洗技术的关键环节，因此，从粘土矿物性质、原油组分、清洗剂性质三个方面对粘土矿物吸附原油的清洗技术进行研究，分析其内在的规律性，是获得普适性含油污泥清洗技术的突破口。 本文结合含油污泥的理化性质分析，选取粒径范围为0～100µm高岭石、蒙脱石、绿泥石和伊利石四种粘土矿物，在优化工艺条件的基础上，研究其吸附原油在不同表面活性剂作用下的解吸规律，分析原油中不同族组分的脱附特性，筛选了针对典型粘土矿物吸附原油的高效清洗剂。 四种粘土矿物吸附原油解吸效率的大小顺序为伊利石>蒙脱石>高岭石>绿泥石。不同表面活性剂对粘土矿物吸附原油清洗效率的大小顺序为阴离子表面活性剂>非离子表面活性剂>阳离子表面活性剂。粘土矿物吸附原油中三个族组分的脱附难易顺序为饱和烃>芳烃>胶质沥青质，饱和烃的脱附效率是控制粘土矿物吸附原油总体清洗效率的最重要参数。Dodec-MNS和NPS-10是良好的粘土矿物吸附原油清洗剂，NPS–10对含油率为18.32%和29.68%的含油污泥的脱附效率分别为78.43%和84.11%。 本文同时还针对含油污泥清洗技术中清洗剂复配，提出根据含油污泥族组分特性，选取亲油基性质与对应族组分性质接近的表面活性剂进行复配的方法，方法经实验验证可行，可作为一种含油污泥清洗剂复配的基本方法。