Thermal analysis and test for single concentrator solar cells

A thermal model for concentrator solar cells based on energy conservation principles was designed. Under 400X concentration with no cooling aid, the cell temperature would get up to about 1200℃.Metal plates were used as heat sinks for cooling the system, which remarkably reduce the cell temperature. For a fixed concentration ratio, the cell temperature reduced as the heat sink area increased. In order to keep the cell at a constant temperature, the heat sink area needs to increase linearly as a function of the concentration ratio. GaInP/GaAs/Ge triple-junction solar cells were fabricated to verify the model. A cell temperature of 37℃ was measured when using a heat sink at 400X concentratration.

A Radial Stub Test Circuit for Microwave Power Devices

With the principles of microwave circuits and semiconductor device physics, two microwave power device test circuits combined with a test fixture are designed and simulated, whose properties are evaluated by a parameter network analyzer within the frequency range from 3 to 8GHz. The simulation and experimental results verify that the test circuit with a radial stub is better than that without. As an example, a C-band AlGaN/GaN HEMT microwave power device is tested with the designed circuit and fixture. With a 5.4GHz microwave input signal, the maximum gain is 8.75dB, and the maximum output power is 33.2dBm.

Two-port calibration of test fixtures with OSL method.

The open-short-load (OSL) method is very simple and widely used, for one-port test fixture calibration. In this paper, this method. is extended to the two-port calibration of test fixtures for the first time. The problem of phase uncertainty arising in this application has been solved. The comparison between our results and those obtained with the short-open-load-thru (SOLT) method shows that the method established is accurate enough for practical applications.

Frequency limitation in calibrating microwave test fixtures

The problem of frequency limitation arising in calibration of the test fixtures is investigated in this paper. It is found that at some frequencies periodically, the accuracy of the methods becomes very low, and. the denominators of the expressions of the required S-parameters approach zero. This conclusion can be drawn whether-the test fixtures, are symmetric or not. A good agreement between theory and experiment is obtained.

Scan test in 18x8 bits Booth Coding-Wallace Tree multiplier

Scan test can be inserted around hard IP cores that have not been designed with DFT approaches. An 18x18 bits Booth Coding-Wallace Tree multiplier has been designed with full custom approach with 0.61 m CMOS technology. When we reuse the multiplier in another chip, scan chain has been inserted around it to increase the fault coverage. After scan insertion, the multiplier needs 4.7% more areas and 24.4% more delay time, while the fault coverage reaches to 95%.

Rashba and Dresselhaus spin-orbit coupling in GaN-based heterostructures probed by the circular photogalvanic effect under uniaxial strain

The spin splitting in GaN-based heterostructures has been investigated by means of circular photogalvanic effect experiments under uniaxial strain. The ratios of Rashba and Dresselhaus spin-orbit coupling coefficients (R/D ratios) have been measured in AlxGa1-xN/GaN heterostructures with various Al compositions. It is found that the R/D ratio increases from 4.1 to 19.8 with the Al composition of the AlxGa1-xN barrier varied from 15% to 36%. The Dresselhaus coefficient of bulk GaN is experimentally obtained to be 0.4 eV angstrom(3). The results indicate that the spin splitting in GaN-based heterostructures can be modulated effectively by the polarization-induced electric fields.

Spin splitting modulated by uniaxial stress in InAs nanowires

We theoretically study the electronic structure, spin splitting, effective mass, and spin orientation of InAs nanowires with cylindrical symmetry in the presence of an external electric field and uniaxial stress. Using an eight-band k center dot p theoretical model, we deduce a formula for the spin splitting in the system, indicating that the spin splitting under uniaxial stress is a nonlinear function of the momentum and the electric field. The spin splitting can be described by a linear Rashba model when the wavevector and the electric field are sufficiently small. Our numeric results show that the uniaxial stress can modulate the spin splitting. With the increase of wavevector, the uniaxial tensile stress first restrains and then amplifies the spin splitting of the lowest electron state compared to the no strain case. The reverse is true under a compression. Moreover, strong spin splitting can be induced by compression when the top of the valence band is close to the bottom of the conductance band, and the spin orientations of the electron stay almost unchanged before the overlap of the two bands.