Rashba and Dresselhaus spin-orbit coupling in GaN-based heterostructures probed by the circular photogalvanic effect under uniaxial strain

The spin splitting in GaN-based heterostructures has been investigated by means of circular photogalvanic effect experiments under uniaxial strain. The ratios of Rashba and Dresselhaus spin-orbit coupling coefficients (R/D ratios) have been measured in AlxGa1-xN/GaN heterostructures with various Al compositions. It is found that the R/D ratio increases from 4.1 to 19.8 with the Al composition of the AlxGa1-xN barrier varied from 15% to 36%. The Dresselhaus coefficient of bulk GaN is experimentally obtained to be 0.4 eV angstrom(3). The results indicate that the spin splitting in GaN-based heterostructures can be modulated effectively by the polarization-induced electric fields.

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Approved for entry into archive by 阎军(yanj@red.semi.ac.cn) on 2010-12-05T03:59:13Z (GMT) No. of bitstreams: 1 Rashba and Dresselhaus spin-orbit coupling in GaN-based heterostructures probed by the circular photogalvanic effect under uniaxial strain.pdf: 244365 bytes, checksum: 76a520b4cfc0c4d93e2ccc965ab98b41 (MD5)

Made available in DSpace on 2010-12-05T03:59:13Z (GMT). No. of bitstreams: 1 Rashba and Dresselhaus spin-orbit coupling in GaN-based heterostructures probed by the circular photogalvanic effect under uniaxial strain.pdf: 244365 bytes, checksum: 76a520b4cfc0c4d93e2ccc965ab98b41 (MD5) Previous issue date: 2010

This work was supported by the National Natural Science Foundation of China (Grant Nos. 60990313, 10774001, 60806042, and 60736033), and National Basic Research Program of China (Grant Nos. 2006CB604908 and 2006CB921607).

国内

This work was supported by the National Natural Science Foundation of China (Grant Nos. 60990313, 10774001, 60806042, and 60736033), and National Basic Research Program of China (Grant Nos. 2006CB604908 and 2006CB921607).