A 10-GHz Bandwidth Electroabsorption Modulated Laser by Ultra-Low-Pressure Selective Area Growth

A novel integration technique has been developed using band-gap energy control of InGaAsP/InGaAsP multiquantum-well (MQW) structures during simultaneous ultra-low-pressure (22 mbar) selective-area-growth (SAG) process in metal-organic chemical vapour deposition. A fundamental study of the controllability of band gap energy by the SAG method is performed. A large band-gap photoluminescence wavelength shift of 83nm is obtained with a small mask width variation (0-30μm). The method is then applied to fabricate an MQW distributed-feedback laser monolithically integrated with an electroabsorption modulator. The experimental results exhibit superior device characteristics with low threshold of 19mA, over 24 dB extinction ratio when coupled into a single mode fibre. More than 10 GHz modulation bandwidth is also achieved, which demonstrates that the ultra-low-pressure SAG technique is a promising approach for high-speed transmission photonic integrated circuits.

Passively Mode Locked Diode-End-Pumped Yb∶YAB Laser with High Reflectivity Type Semiconductor Saturable Absorption Mirror

利用金属有机气相淀积方法生长了一种新型吸收体:高反射率半导体可饱和吸收镜.用这种吸收体兼作端镜,实现了1.044μm半导体端面泵浦Yb∶YAB激光器被动锁模,脉冲宽度为3.05ps,重复率为375MHz,输出功率为45mW.

Application of Low and Ultra-Low Pressure Reverse Osmosis Membranes to Water Treatment

于2010-11-23批量导入

Dependence of ultra-thin gate oxide reliability on surface cleaning approach

In this paper, we investigate the effect of silicon surface cleaning prior to oxidation on the reliability of ultra-thin oxides. It is demonstrated that chemical preoxide grown in H2SO4/H2O2 (SPM) solution prior to oxidation provides better oxide integrity than both HF-based solution dipping and preoxide grown in RCA SC1 or SC2 solutions. It is also found that the oxides with SPM preoxide exhibit better hot-carrier immunity than the RCA cleaned oxides.

First charge collection and position-precision data on the medium-resistivity silicon strip detectors before and after neutron irradiation up to 2x10(14) n/cm(2)

Test strip detectors of 125 mu m, 500 mu m, and 1 mm pitches with about 1 cm(2) areas have been made on medium-resistivity silicon wafers (1.3 and 2.7 k Ohm cm). Detectors of 500 mu m pitch have been tested for charge collection and position precision before and after neutron irradiation (up to 2 x 10(14) n/cm(2)) using 820 and 1030 nm laser lights with different beam-spot sizes. It has been found that for a bias of 250 V a strip detector made of 1.3 k Ohm cm (300 mu m thick) can be fully depleted before and after an irradiation of 2 x 10(14) n/cm(2). For a 500 mu m pitch strip detector made of 2.7 k Ohm cm tested with an 1030 nm laser light with 200 mu m spot size, the position reconstruction error is about 14 mu m before irradiation, and 17 mu m after about 1.7 x 10(13) n/cm(2) irradiation. We demonstrated in this work that medium resistivity silicon strip detectors can work just as well as the traditional high-resistivity ones, but with higher radiation tolerance. We also tested charge sharing and position reconstruction using a 1030 nm wavelength (300 mu m absorption length in Si at RT) laser, which provides a simulation of MIP particles in high-physics experiments in terms of charge collection and position reconstruction, (C) 1999 Elsevier Science B.V. All rights reserved.

High precision mass measurement and LPT

A Penning trap, which can measure the atomic masses with the highest precision, is one of the most important facilities in nuclear physics research nowadays. The precision mass data play an important role in the studies of nuclear models, mass formulas, nuclear synthesis processes in the nuclear astrophysics, symmetries of the weak interaction and the conserved vector current (CVC) hypothesis. The status of high precision mass measurement around the world, the basic principle of Penning trap and the basic information about the LPT (Lanzhou Penning Trap) are introduced.

Precision measurement of excited spectra of oxygen ions

Spectra of the ionized oxygen atom were researched with the Pro-500i monochromator equipped with CCD. The beam foil method was used at energy of 2 MeV in a 2 x 1.7 Tandem accelerator. In this work, we report 201 spectral lines determined in the region 250-350 nm, and most spectral lines were attributed to n, l energy level transitions from O II to O IV atoms. Our experimental results are in good agreement with existing theoretical calculations. Many lines reported in this paper have not been measured in past experiments, and a majority of them are week transitional lines.

新型多道高精度的时间-电压转换电路系统的设计；A Design of New Multi-channel High Precision Time-to-amplitude Convert (TAC) Circuit

在发展髙性能多路小型化前端电路方面,阐述了一种用于测试时间的系统电路的设计与实现。其突出特点是转换速度快,电路结构简单,输入信号范围大、精度高、功耗低,电路采用改进的TAC方法,用于处理快速的时间信号,利用高速DMOS开关,并优化控制逻辑时序,极大提高了测试精度。

Molecular dynamics and control following excitation with an ultra-short intense laser pulse

Vibronic excitations of the tri-atomic molecule OClO (A(2)A(2)(nu(1), nu(2), nu(3)) <-- (XB1)-B-2 (0, 0, 0)) with weak and strong ultra-short laser fields are studied within full quantum wavepacket dynamics in hyperspherical coordinates. Different dynamics is observed following excitation with laser pulses of different intensities. With a strong laser pulse, many vibrational states are excited and a spatially more localised wavepacket arises. The numerical results show that the population of different vibrational states of the wavepacket on the excited potential energy surface is altered by the intensity of the laser pulse. The numerical results also suggest a related effect on the phase of the wavepacket. These interesting phenomena can be understood by an analysis of the corresponding results for two model diatomic molecules. The possible physical mechanisms of control of chemical processes using strong laser fields are discussed. (C) 2004 Elsevier B.V. All rights reserved.