Passively Mode Locked Diode-End-Pumped Yb∶YAB Laser with High Reflectivity Type Semiconductor Saturable Absorption Mirror
| Data(s) |
2005
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| Resumo |
利用金属有机气相淀积方法生长了一种新型吸收体:高反射率半导体可饱和吸收镜.用这种吸收体兼作端镜,实现了1.044μm半导体端面泵浦Yb∶YAB激光器被动锁模,脉冲宽度为3.05ps,重复率为375MHz,输出功率为45mW. 利用金属有机气相淀积方法生长了一种新型吸收体:高反射率半导体可饱和吸收镜.用这种吸收体兼作端镜,实现了1.044μm半导体端面泵浦Yb∶YAB激光器被动锁模,脉冲宽度为3.05ps,重复率为375MHz,输出功率为45mW. 于2010-11-23批量导入 zhangdi于2010-11-23 13:05:07导入数据到SEMI-IR的IR Made available in DSpace on 2010-11-23T05:05:07Z (GMT). No. of bitstreams: 1 4563.pdf: 318942 bytes, checksum: 9b42eac3a82826aeb14d9ffe3338492e (MD5) Previous issue date: 2005 Institute of Semiconductors, Chinese Academy of Sciences;Ultra fast Laser Laboratory, School of Precision Instrument and Optoelectronics Engineering, Tianjin University |
| Identificador | |
| Idioma(s) |
英语 |
| Fonte |
Wang Yonggang;Ma Xiaoyu;Xue Yinghong;Sun Hong;Zhang Zhigang;Wang Qingyue.Passively Mode Locked Diode-End-Pumped Yb∶YAB Laser with High Reflectivity Type Semiconductor Saturable Absorption Mirror,半导体学报,2005,26(2):250-253 |
| Palavras-Chave | #半导体器件 |
| Tipo |
期刊论文 |
