The Influence of Age and Sex on the Cell Counts of Peripheral Blood Leukocyte Subpopulations in Chinese Rhesus Macaques

therapeutic drugs, vaccines and mechanisms of human diseases. Little is known about the normal levels of leukocyte subpopulations of Chinese rhesus macaques. To obtain these data, 100 blood samples from Chinese rhesus macaques were collected. The normal range of major leukocyte subpopulations, such as T lymphocytes, B lymphocytes, monocytes, myeloid dendritic cells (mDCs) and plasmacytoid dendritic cells (pDCs), were quantitatively analyzed by flow cytometry through BD trucount tubes. The influence of age and sex on the cell counts of leukocyte subpopulations was analyzed. The counts of CD3+ T cells, CD3+CD4+ T cells, CD3+CD8+ T cells and B cells decreased with age, but those of monocytes, mDCs and pDCs had no significant correlation with age. Significant differences existed in the cell counts of most leukocyte subpopulations between the male and female groups except pDCs. Furthermore the values of the females were higher than those of the males. The study provided basic information about the leukocyte subpopulations of Chinese rhesus macaques, and it may be valuable for immunobiological study of Chinese rhesus macaques. Cellular & Molecular Immunology. 2009;6(6):433-440.

The structures and transformations on Si(113) surface

The surface structures of the Si(113)-(1 X 1), Si(113)-(3 X 1) and Si(113)-(3 X 2) have been studied theoretically by means of an ab initio quantum chemical CNDO method. We address not only the importance of the surface energy but also the energy minimization and the barrier height in the different structural conversion. We found that (1) the relaxed Si(113)-(1 X 1) structure. (2) the Si(113)-(3 X 1) close to the Si(113) Ranke (3 X 1)-2 model; (3) the atomic positions of Si(113)-(3 X 2) corrugated arrangement. (C) 1997 Elsevier Science B.V.

Photoluminescence and activation on SI-GaAs by Si+ implantation and following rapid thermal annealing

Photoluminescence (PL) and electrical characteristics of SI-GaAs, Si+-implanted and following rapid thermal annealing (RTA), were investigated, The PL spectra of Si-GA-C-As, Ga-i-Si-As, and V-As-Si-As were obtained. This paper concentrates on the PL peak at 1.36 eV which was proven as an emission of the Si-Ga-V-Ga combination by Si+ + P+ dual implantation. The results indicate that the peak at 1.36 eV appears when the ratio of As:Ga increased during the processing. Also high activation was obtained for the sample under the same conditions. More discussion on the mechanism of Si+ implanted SI-GaAs has been made based on the Morrow model [J. Appl. Phys, 64 (1988) 1889].

Optoelectronic Smart Pixels Comprising Flip-Chip-Bonded GaAs/AlGaAs MQW Detectors and Modulators on Silicon CMOS Circuit

于2010-11-23批量导入

Effect of carrier relaxation and emission on photoluminescence of InAs quantum dots

　

MOVPE growth of GaN and LED on (111) MgAl2O4

The growth of wurtzite GaN by low-pressure metalorganic vapor-phase epitaxy on (1 1 1) magnesium aluminate (MgAl2O4) substrates have been studied. The morphological, crystalline, electrical and optical properties are investigated. A p-n junction GaN LED was fabricated on the MgAl2O4 substrate. (C) 1998 Elsevier Science B.V. All rights reserved.