Effect of carrier relaxation and emission on photoluminescence of InAs quantum dots
| Data(s) |
1999
|
|---|---|
| Resumo |
于2010-10-29批量导入 Made available in DSpace on 2010-10-29T06:37:08Z (GMT). No. of bitstreams: 0 Previous issue date: 1999 Dielect Sci & Technol.; Electrochem Soc, Electr, Luminescence & Display Mat Div. Chinese Acad Sci, Inst Semicond, Natl Lab Superlattices & Microstruct, Beijing 100083, Peoples R China Dielect Sci & Technol.; Electrochem Soc, Electr, Luminescence & Display Mat Div. |
| Identificador | |
| Idioma(s) |
英语 |
| Publicador |
ELECTROCHEMICAL SOCIETY INC 65 S MAIN ST, PENNINGTON, NJ 08534-2839 USA |
| Fonte |
Zhu HJ; Wang ZM; Sun BQ; Feng SL; Jiang DS; Zheng HZ .Effect of carrier relaxation and emission on photoluminescence of InAs quantum dots .见：ELECTROCHEMICAL SOCIETY INC .PROCEEDINGS OF THE FIFTH INTERNATIONAL SYMPOSIUM ON QUANTUM CONFINEMENT: NANOSTRUCTURES, 98 (19),65 S MAIN ST, PENNINGTON, NJ 08534-2839 USA ,1999,318-319 |
| Palavras-Chave | #半导体物理 |
| Tipo |
会议论文 |
